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1. 发明申请

WO2012140684A1 SINTERING PROCESS OF METAL OXIDE BASED FORMULATIONS 审中-公开
标题翻译：基于金属氧化物的制粉工艺
公开(公告)号：WO2012140684A1
公开(公告)日：2012-10-18
申请号：PCT/IT2012/000104
申请日：2012-04-12
申请人： DYEPOWER , DI CARLO, Aldo , MINCUZZI, Girolamo , BROWN, Thomas, Meredith , REALE, Andrea
发明人： DI CARLO, Aldo , MINCUZZI, Girolamo , BROWN, Thomas, Meredith , REALE, Andrea
IPC分类号： H01G9/20 , H01L51/00
CPC分类号： H01G9/0029 , B82Y30/00 , C04B35/46 , C04B35/6264 , C04B35/64 , C04B2235/3232 , C04B2235/5427 , C04B2235/5454 , C04B2235/5472 , C04B2235/6025 , C04B2235/665 , C04B2235/9661 , H01G9/004 , H01G9/2031 , H01L51/0026 , Y02E10/542 , Y02P70/521
摘要： The present invention relates to a process of sintering of metal oxide films, from formulations based on particles of metal oxides, characterized in that it comprises the following steps, in succession: a) adding to the formulation particles or molecules of a compound absorbing the electromagnetic radiation in the regions of visible and/or infrared spectrum that, in consequence of the absorption of the radiation, generates heat; b) mixing until a homogeneous dispersion of the absorbing compound in the formulation is obtained; c) deposition of the formulation in the form of a film on a substrate; d) irradiation of said film with an electromagnetic radiation in the visible and/or infrared regions of the spectrum, to obtain the desired sintering of said particles of metal oxides through the heating produced by said absorbing compound. The invention also relates to a process for the production of photoelectrochemical cells in which the steps of manufacture of the electrode based on metal oxides are carried out according to said sintering process of formulations based on metal oxides and the steps of manufacture of the counter electrode can be performed by a similar procedure.
摘要翻译：本发明涉及一种基于金属氧化物颗粒的制剂烧结金属氧化物膜的方法，其特征在于，其包括以下步骤：a）向制剂中添加吸收电磁波的化合物的颗粒或分子可见光和/或红外光谱区域的辐射，由于辐射的吸收而产生热量; b）混合直到获得制剂中吸收化合物的均匀分散体; c）将制剂以膜的形式沉积在基材上; d）在光谱的可见光和/或红外区域中用电磁辐射照射所述膜，以通过所述吸收化合物产生的加热获得所述金属氧化物颗粒的所需烧结。本发明还涉及一种制备光电化学电池的方法，其中基于金属氧化物的电极的制造步骤根据基于金属氧化物的配方的所述烧结方法进行，并且制备相对电极罐的步骤通过类似的过程执行。

2. 发明申请

WO2012081046A1 DSSC PHOTOVOLTAIC DEVICE COMPRISING PHOTOELECTROCHEMICAL CELLS AND PROVIDED WITH BYPASS MEANS AND UV FILTER 审中-公开
标题翻译：包含光电化学电池的DSSC光伏器件和旁路装置和UV滤光片
公开(公告)号：WO2012081046A1
公开(公告)日：2012-06-21
申请号：PCT/IT2011/000405
申请日：2011-12-15
申请人： DYEPOWER , LANUTI, Alessandro , MASTROIANNI, Simone , REALE, Andrea , BROWN, Thomas, Meredith , PENNA, Stefano
发明人： LANUTI, Alessandro , MASTROIANNI, Simone , REALE, Andrea , BROWN, Thomas, Meredith , PENNA, Stefano
IPC分类号： H01G9/20
CPC分类号： H01G9/2068 , H01G9/2031 , H01G9/2059 , H01G9/2081 , Y02E10/542
摘要： The present invention relates to a DSSC photovoltaic device comprising at least one photoelectrochemical cell (4) provided with a negative electrode or photo-electrode and a positive electrode or counter electrode, said at least one photoelectrochemical cell (4) being interposed between two substrates, a first substrate (9) on the side of said positive electrode and a second substrate (10) on the side of said negative electrode, each one of said substrates (9, 10) having a relevant first face (2, 3) and a relevant second face (22, 33), opposed with respect to said first face, the first face (2) of said first substrate (9) being faced toward said first face (3) of said second substrate (10). Particularly, said DSSC photovoltaic device further comprises: integrated bypass means on said substrates, said bypass means comprising a bypass diode (5, 5') for said at least one photoelectrochemical cell (4), said bypass diode (5) being provided on one edge of the photovoltaic device, wherein said edge is defined by at least two portions, a portion of said first substrate (9) and a portion of said second substrate (10), and by an encapsulating material (41), comprised of electrically insulating material, interposed between said two portions; two conductive tracks (6, 7) connecting the anode and cathode of said bypass diode (5, 5') to the negative and positive electrode of said cell, respectively; and UV filtering means to at least partially filter UV radiation, applied on at least a face (2, 22, 3, 33) of said substrates (9, 10), at least in correspondence of said at least one cell.
摘要翻译：本发明涉及一种DSSC光伏器件，其包括至少一个光电化学电池（4），该光电化学电池（4）设置有负电极或光电极以及正电极或对电极，所述至少一个光电化学电池（4）插入在两个衬底之间，所述正极侧的第一基板（9）和位于所述负极侧的第二基板（10），所述基板（9,10）中的每一个具有相关的第一面（2,3）和相对于所述第一面相对的相关的第二面（22,33），所述第一基板（9）的第一面（2）面向所述第二基板（10）的所述第一面（3）。特别地，所述DSSC光伏器件还包括：在所述衬底上的集成旁路装置，所述旁路装置包括用于所述至少一个光电化学电池（4）的旁路二极管（5,5'），所述旁路二极管（5）设置在一个边缘，其中所述边缘由至少两个部分限定，所述第一基板（9）的一部分和所述第二基板（10）的一部分以及由电绝缘的包封材料（41）限定材料，插入在所述两个部分之间; 将所述旁路二极管（5,5'）的阳极和阴极分别连接到所述电池的负极和正极的两个导电轨道（6,7）和UV过滤装置，至少部分地至少部分地过滤施加在所述基板（9,10）的至少一个面（2,22,3,33）上的UV辐射，至少对应于所述至少一个单元。

3. 发明申请

WO2004055920A2 ELECTRONIC DEVICES 审中-公开
标题翻译：电子设备
公开(公告)号：WO2004055920A2
公开(公告)日：2004-07-01
申请号：PCT/GB2003/005435
申请日：2003-12-12
申请人： PLASTIC LOGIC LIMITED , BROWN, Thomas, Meredith , SIRRINGHAUS, Henning
发明人： BROWN, Thomas, Meredith , SIRRINGHAUS, Henning
IPC分类号： H01L51/20
CPC分类号： B05D5/12 , B05D1/322 , B05D3/145 , B82Y10/00 , B82Y30/00 , H01L51/0016 , H01L51/0017 , H01L51/0021 , H01L51/0022 , H01L51/0023 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/057 , H01L51/105 , H01L2251/105 , Y10S977/887
摘要： A method for forming an electronic device in a multilayer structure comprising the steps of: defining a topographic profile in a laterally extending first layer; depositing at least one non-planarizing layer on top of the first layer such that the topographic profile of the surface of the or each non-planarizing layer conforms to that of the laterally extending first layer; and depositing a pattern of at least one additional layer onto the top-most non-planarizing layer, such that the lateral location of the additional layer is defined by the shape of the topographic profile of the non-planarizing layer, and whereby the additional layer is laterally aligned with the topographic profile in the first layer.
摘要翻译：一种用于以多层结构形成电子器件的方法，包括以下步骤：在横向延伸的第一层中限定形貌轮廓; 在所述第一层的顶部上沉积至少一个非平坦化层，使得所述或每个非平坦化层的所述表面的所述形貌轮廓与所述横向延伸的第一层的轮廓的轮廓相符; 以及在最顶部的非平坦化层上沉积至少一个附加层的图案，使得附加层的横向位置由非平坦化层的形貌轮廓的形状限定，并且由此附加层与第一层中的地形轮廓横向对齐。

4. 发明申请

WO2006129126A2 LAYER-SELECTIVE LASER ABLATION PATTERNING 审中-公开
标题翻译：层选择性激光吸收图案
公开(公告)号：WO2006129126A2
公开(公告)日：2006-12-07
申请号：PCT/GB2006/050133
申请日：2006-05-30
申请人： PLASTIC LOGIC LIMITED , HAYTON, Carl , CAIN, Paul , BROWN, Thomas, Meredith
发明人： HAYTON, Carl , CAIN, Paul , BROWN, Thomas, Meredith
IPC分类号： H01L51/05
CPC分类号： H01L51/102 , H01L51/0017 , H01L51/0021 , H01L51/055
摘要： The present invention relates to methods of fabricating electronic devices such as thin film transistor (TFT) structures using laser ablation for selective patterning. A method of fabricating an organic electronic device, said organic electronic device having a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution processable semiconducting layer, said upper conducting layer preferably having a thickness of between 10 nm and 200 nm, the method comprising patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.
摘要翻译：本发明涉及使用激光烧蚀来选择性图案化的诸如薄膜晶体管（TFT）结构的电子器件的制造方法。一种制造有机电子器件的方法，所述有机电子器件具有包括在上导电层正下方的上导电层和下层的结构，并且具有至少一个溶液可加工半导体层，所述上导电层优选具有在10nm和200nm之间，所述方法包括：通过以下步骤对所述结构的所述上导电层进行图案化：使用脉冲激光激光烧蚀所述上导电层，以从所述下层移除用于所述图案化的上导电层的区域; 并且其中所述激光烧蚀使用所述激光器的单个脉冲基本上完全去除所述上导电层的所述区域，以暴露下面的下层。

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