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2. 发明申请

WO2007061170A1 LOADING DEVICE OF CHEMICAL MECHANICAL POLISHING EQUIPMENT FOR SEMICONDUCTOR WAFERS 审中-公开
标题翻译：化学机械抛光设备用于半导体波导的装载装置
公开(公告)号：WO2007061170A1
公开(公告)日：2007-05-31
申请号：PCT/KR2006/002893
申请日：2006-07-21
申请人： DOOSAN DND CO., LTD. , NA, Young Min , KIM, Chang Il , HEO, Young Su
发明人： NA, Young Min , KIM, Chang Il , HEO, Young Su
IPC分类号： H01L21/304
CPC分类号： B24B37/345
摘要： A loading device of chemical mechanical polishing (CMP) equipment for semiconductor wafers is provided. The loading device includes a loading cup having a cup-like bath, a cup plate installed in the bath, and a loading plate supported on the cup plate so as to be capable of absorbing shock and seating the wafer; a driving device and a driving shaft horizontally pivoting and vertically moving the loading cup between a platen of a polishing apparatus and a spindle; and an arm connecting between the loading cup and the driving shaft. At least one through hole is formed at one or more mutually corresponding positions of the bath and cup plate and the loading plate of the loading cup. At least one probe assembly for optically detecting a polished thickness at a polished point on the wafer is inserted and installed into each through hole at the corresponding position of the loading cup. An optical thickness detection device capable of applying light onto a layer on the wafer to detect reflected spectrum wavelengths, and detecting a layer thickness of the wafer by change in a physical quantity extracted from a spectrum interference signal between the detected reflected spectrum wavelengths is provided at one side of the driving device. An optical fiber cable connecting each of the probe assemblies and the thickness detection device is disposed in the arm. Thereby, the thickness of a layer on the wafer can be measured by at least one loading device installed in the CMP equipment for a single-step or multi-step polishing process, after a polishing process is performed on a previously input wafer and just before it is performed on a subsequently input wafer, or before a subsequent polishing process is performed on the same previously input wafer, thereby more rapidly transmitting and reflecting information useful for polishing of the subsequent wafer, and improving wafer polishing precision as well as simplifying a structure of the CMP equipment.
摘要翻译：提供了一种用于半导体晶片的化学机械抛光（CMP）设备的装载装置。装载装置包括具有杯状浴的装载杯，安装在浴槽中的杯板，以及支撑在杯板上以便能够吸收冲击和安放晶片的装载板; 驱动装置和驱动轴水平地枢转并且将加载杯垂直移动在抛光装置的压板和主轴之间; 以及连接在装载杯和驱动轴之间的臂。至少一个通孔形成在浴缸和杯板以及装载杯的装载板的一个或多个相互对应的位置上。用于光学地检测晶片上抛光点处的抛光厚度的至少一个探针组件被插入并安装到装载杯的相应位置处的每个通孔中。一种光学厚度检测装置，其能够将光施加到晶片上的层上以检测反射光谱波长，并且通过从检测到的反射光谱波长之间的光谱干涉信号提取的物理量的变化来检测晶片的层厚度。驱动装置的一侧。连接每个探针组件和厚度检测装置的光纤电缆设置在臂中。因此，在对先前输入的晶片进行抛光处理之后并且刚刚在之前，可以通过安装在CMP设备中的至少一个装载装置来测量晶片上的层的厚度，以进行单步或多步抛光工艺它在随后输入的晶片上执行，或者在对相同的先前输入的晶片进行后续的抛光处理之前执行，从而更快速地传输和反映用于后续晶片的抛光的信息，并且提高晶片抛光精度以及简化结构的CMP设备。

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