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    • 9. 发明申请
    • METHODS AND APPARATUSES FOR DELAMINATING PROCESS PIECES
    • 分层过程的方法和装置
    • WO2014200827A1
    • 2014-12-18
    • PCT/US2014/041205
    • 2014-06-06
    • YE, Yan
    • YE, Yan
    • H01L21/78H01L21/76
    • C25F5/00C25F7/00H01L21/3213H01L21/7806H01L29/66765
    • Methods and apparatuses for delaminating workpieces are provided. In one or more aspects, a method can include processing or otherwise delaminating the workpiece by separating a delamination stack and a support substrate disposed thereon. The workpiece that can include a sacrificial layer disposed between the delamination stack and the support substrate. The method can include exposing at least a portion of the workpiece to an electrolyte solution, applying an electrical current through the sacrificial layer and the electrolyte solution, selectively removing the electrically conductive or semiconductive material from the sacrificial layer during an etching process, and separating the delamination stack and the support substrate one from the other. The delamination stack can include a process piece that can be one or more wafers or devices (e.g., thin-film devices) or one or more portions of the one or more wafers or devices.
    • 提供了用于工件分层的方法和装置。 在一个或多个方面,一种方法可以包括通过分离设置在其上的分层叠层和支撑衬底来处理或以其它方式分层工件。 可以包括设置在分层叠层和支撑衬底之间的牺牲层的工件。 该方法可以包括将至少一部分工件暴露于电解质溶液,通过牺牲层和电解质溶液施加电流,在蚀刻过程中从牺牲层选择性地去除导电或半导体材料, 分层叠层和支撑衬底。 分层堆叠可以包括可以是一个或多个晶片或器件(例如,薄膜器件)或一个或多个晶片或器件的一个或多个部分的工艺件。