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1. 发明申请

WO2010025031A2 METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING CHARACTER PROJECTION LITHOGRAPHY 审中-公开
标题翻译：使用特征投影算术的光学近似校正，设计和制造方法
公开(公告)号：WO2010025031A2
公开(公告)日：2010-03-04
申请号：PCT/US2009/053327
申请日：2009-08-10
申请人： D2S, INC. , FUJIMURA, Akira , GLASSER, Lance , MITSUHASHI, Takashi , HAGIWARA, Kazuyuki
发明人： FUJIMURA, Akira , GLASSER, Lance , MITSUHASHI, Takashi , HAGIWARA, Kazuyuki
IPC分类号： G03F7/20 , H01L21/027 , G03F1/16
CPC分类号： G03F7/2037 , B82Y10/00 , B82Y40/00 , G03F1/68 , H01J37/3174
摘要： A method and system for manufacturing a surface having a multiplicity of slightly different patterns is disclosed. The method comprises using a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. Application of such a method to fracturing, mask data preparation, or proximity effect correct is also disclosed. A method for optical proximity correction of a design of a pattern on a surface is also disclosed, comprising inputting desired patterns for the substrate and inputting a set of characters, some of which are complex characters, that may be used to form the pattern on the surface. A method of creating glyphs is also disclosed.
摘要翻译：公开了一种用于制造具有多种略微不同图案的表面的方法和系统。该方法包括使用具有用于在表面上形成图案的一组字符的模板掩模，并且通过使用字符变化技术减少镜头计数或总写入时间。还公开了这种方法对压裂，掩模数据准备或邻近效应正确的应用。还公开了一种用于表面上的图案设计的光学邻近校正的方法，包括输入用于衬底的期望图案并输入一组字符，其中一些字符是复杂字符，其可以用于在图案上形成图案表面。还公开了一种创建字形的方法。

2. 发明申请

WO2012118621A2 METHOD AND SYSTEM FOR DESIGN OF ENHANCED PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：用于填充粒子束光刻的增强图案的设计方法和系统
公开(公告)号：WO2012118621A2
公开(公告)日：2012-09-07
申请号：PCT/US2012/025328
申请日：2012-02-16
申请人： D2S, INC. , FUJIMURA, Akira , HAGIWARA, Kazuyuki , MEIER, Stephen F. , BORK, Ingo
发明人： FUJIMURA, Akira , HAGIWARA, Kazuyuki , MEIER, Stephen F. , BORK, Ingo
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
摘要翻译：提出了一种用于压裂或掩模数据准备的方法和系统，其中产生重叠射击以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。在各种实施例中，改进可能影响路径或线的端部，或方形或近似正方形的图案。模拟用于确定将在表面上产生的图案。

3. 发明申请

WO2011025795A1 METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH VARIABLE BEAM BLUR 审中-公开
标题翻译：使用带有可变光束的电荷粒子束光刻制造表面的方法和系统
公开(公告)号：WO2011025795A1
公开(公告)日：2011-03-03
申请号：PCT/US2010/046559
申请日：2010-08-24
申请人： D2S, INC. , HAGIWARA, Kazuyuki , FUJIMURA, Akira
发明人： HAGIWARA, Kazuyuki , FUJIMURA, Akira
IPC分类号： H01J37/317 , G03F1/14 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/68
摘要： A charged particle beam writer system is disclosed comprising a generator for a charged particle beam having a beam blur radius, wherein the beam blur radius may be varied from shot to shot, or between two or more groups of shots. A method for fracturing or mask data preparation or optical proximity correction is also disclosed comprising assigning a beam blur radius variation to each calculated charged particle beam writer shot. A method for forming a pattern on a surface is also disclosed comprising using a charged particle beam writer system and varying the beam blur radius from shot to shot. A method for manufacturing an integrated circuit using optical lithography is also disclosed, comprising using a charged particle beam writer system to form a pattern on a reticle, and varying the beam blur radius of the charged particle beam writer system from shot to shot.
摘要翻译：公开了一种带电粒子束写入器系统，其包括用于具有束模糊半径的带电粒子束的发生器，其中光束模糊半径可以从射击到射击，或者在两组或多组镜头之间变化。还公开了一种用于压裂或掩模数据准备或光学邻近校正的方法，其包括将光束模糊半径变化分配给每个计算的带电粒子束写入器镜头。还公开了一种用于在表面上形成图案的方法，其包括使用带电粒子束写入器系统并改变射束模糊半径从射击到射击。还公开了使用光刻法制造集成电路的方法，包括使用带电粒子束写入器系统在掩模版上形成图案，并且将带电粒子束写入器系统的光束模糊半径从镜头改变为镜头。

4. 发明申请

WO2012051082A2 METHOD AND SYSTEM FOR FORMING HIGH ACCURACY PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用带电粒子束光刻技术形成高精度图案的方法和系统
公开(公告)号：WO2012051082A2
公开(公告)日：2012-04-19
申请号：PCT/US2011/055536
申请日：2011-10-09
申请人： D2S, INC. , FUJIMURA, Akira , HAGIWARA, Kazuyuki , MEIER, Stephen F. , BORK, Ingo
发明人： FUJIMURA, Akira , HAGIWARA, Kazuyuki , MEIER, Stephen F. , BORK, Ingo
IPC分类号： H01L21/027
CPC分类号： G06F17/5081 , G03F7/70441 , G06F17/5077 , G06F2217/12
摘要： A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.
摘要翻译：公开了一种用于带电粒子束光刻的压裂或掩模数据准备的方法和系统，其中通过一组带电粒子束射击在表面上形成的图案的准确度和/或边缘斜率被增强通过使用部分重叠的镜头。在一些实施例中，在临近效应校正之前，镜头的剂量可以相对于彼此变化。粒子束模拟可用于计算图案和边缘斜率。增强的边缘斜率可以改善表面上产生的图案的临界尺寸（CD）变化和线边缘粗糙度（LER）。

5. 发明申请

WO2010025032A2 METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY 审中-公开
标题翻译：使用可变形波束光刻的光学近似校正，设计和制造方法的方法
公开(公告)号：WO2010025032A2
公开(公告)日：2010-03-04
申请号：PCT/US2009/053328
申请日：2009-08-10
申请人： D2S, INC. , FUJIMURA, Akira , GLASSER, Lance
发明人： FUJIMURA, Akira , GLASSER, Lance
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/36 , G03F1/68 , G03F1/78 , H01J37/3174
摘要： The present invention describes a method for using variable shaped beam (VSB) shots to form a desired pattern on a surface, where the union of the plurality of VSB shots deviates from the desired pattern. Additionally, the VSB shots are allowed to overlap each other, and the dosages of the shots are allowed to vary. Similar methods are disclosed for optical proximity correction (OPC), fracturing, mask data preparation, and proximity effect correction. A method for creating glyphs is also disclosed, in which patterns that would result on a surface from one or a group of VSB shots are pre-calculated. In some embodiments, an optimization technique may be used to minimize shot count. The method of the present disclosure may be used, for example, in the process of manufacturing an integrated circuit by optical lithography using a reticle, or in the process of manufacturing an integrated circuit using direct write.
摘要翻译：本发明描述了一种使用可变形波束（VSB）镜头在表面上形成期望图案的方法，其中多个VSB镜头的联合偏离期望的图案。此外，允许VSB拍摄彼此重叠，允许拍摄的剂量变化。公开了用于光学邻近校正（OPC），压裂，掩模数据准备和邻近效应校正的类似方法。还公开了一种用于创建字形的方法，其中将导致来自一个或一组VSB镜头的表面的图案被预先计算。在一些实施例中，可以使用优化技术来最小化镜头计数。本公开的方法可以用于例如通过使用光罩的光学光刻制造集成电路的过程中，或者在使用直接写入的集成电路的制造过程中。

6. 发明申请

WO2008064155A3 STENCIL DESIGN AND METHOD FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
公开(公告)号：WO2008064155A3
公开(公告)日：2008-05-29
申请号：PCT/US2007/085097
申请日：2007-11-19
申请人： D2S, INC. , YOSHIDA, Kenji , MITSUHASHI, Takashi , MATSUSHITA, Shohei , FUJIMURA, Akira
发明人： YOSHIDA, Kenji , MITSUHASHI, Takashi , MATSUSHITA, Shohei , FUJIMURA, Akira
IPC分类号： G21K5/10
摘要： A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.

7. 发明申请

WO2010030438A1 STENCIL, STENCIL DESIGN SYSTEM AND METHOD FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：细胞投射粒子束光刻的STENCIL，STENCIL设计系统和方法
公开(公告)号：WO2010030438A1
公开(公告)日：2010-03-18
申请号：PCT/US2009/051606
申请日：2009-07-23
申请人： D2S, INC. , FUJIMURA, Akira , MITSUHASHI, Takashi , KOMURO, Katsuo
发明人： FUJIMURA, Akira , MITSUHASHI, Takashi , KOMURO, Katsuo
IPC分类号： H01L21/027 , G03F7/12
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , Y10S430/143
摘要： Stencil masks, particle beam lithography characters and methods for designing the same for use in particle beam lithography are disclosed. The masks, characters and methods for designing them allows for more accurately writing images by reducing various chemical and physical effects, particularly Coulomb and proximity effects. Particle current reaching a surface is reduced by introducing shield areas, which preserve the shape and fidelity of the written image. The shape of the written image is further corrected by systematically adjusting the shape of the character or mask.
摘要翻译：公开了用于粒子束光刻的模版掩模，粒子束光刻特征及其设计方法。用于设计它们的掩模，字符和方法允许通过减少各种化学和物理效应，特别是库仑和邻近效应来更准确地写入图像。通过引入屏蔽区域来减小到达表面的粒子电流，这保护了书写图像的形状和保真度。通过系统地调整字符或掩模的形状来进一步校正书写图像的形状。

8. 发明申请

WO2008064176A2 METHOD AND SYSTEM FOR IMPROVING PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：改进颗粒束光刻的方法和系统
公开(公告)号：WO2008064176A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/085135
申请日：2007-11-19
申请人： D2S, INC. , FUJIMURA, Akira , FONG, James , MITSUHASHI, Takashi , MATSUSHITA, Shohei
发明人： FUJIMURA, Akira , FONG, James , MITSUHASHI, Takashi , MATSUSHITA, Shohei
IPC分类号： G21K5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exposed to a particle beam so as to project the first polygonal-shaped cell pattern on a substrate. A second polygonal-shaped cell pattern, having a contour that mates with the contour of the first polygonal-shaped cell pattern, is exposed to the particle beam, such as an electron beam, so as to project the second polygonal-shaped cell pattern adjacent to the first polygonal-shaped cell pattern to thereby form a combined cell with the contour of the first polygonal-shaped cell pattern mated to the contour of the second polygonal-shaped cell pattern. The polygonal-shaped contour of the first and second cell patterns may comprise a rectilinear-shaped contour.
摘要翻译：用于粒子束光刻的方法，例如电子束（EB）光刻，包括在模板掩模上形成多个单元图案并且以多边形轮廓对一个或多个单元图案进行成型。将第一多边形形状的单元图案暴露于粒子束，以将第一多边形单元图案投影到基板上。具有与第一多边形形状的单元图案的轮廓相匹配的轮廓的第二多边形形状的单元图案被暴露于诸如电子束的粒子束，以便将第二多边形单元图案相邻地突出到第一多边形形状的单元图案，从而形成与第二多边形形状的单元图案的轮廓相配合的第一多边形单元图案的轮廓的组合单元。第一和第二单元图案的多边形轮廓可以包括直线形轮廓。

9. 发明申请

WO2008109251A1 METHOD AND SYSTEM FOR IMPROVEMENT OF DOSE CORRECTION FOR PARTICLE BEAM WRITERS 审中-公开
标题翻译：用于改进颗粒束编码的剂量校正的方法和系统
公开(公告)号：WO2008109251A1
公开(公告)日：2008-09-12
申请号：PCT/US2008/054332
申请日：2008-02-19
申请人： D2S, INC. , FUJIMURA, Akira , MITSUHASHI, Takashi , HARA, Daisuke , KOMURO, Katsuo
发明人： FUJIMURA, Akira , MITSUHASHI, Takashi , HARA, Daisuke , KOMURO, Katsuo
IPC分类号： G06F17/50
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/70441 , G03F7/70558 , Y10S430/143
摘要： A method and system for dose correction of a particle beam writer is disclosed. The method and system includes reading a file of writing objects that includes dose intensity, calculating a rate of dose intensity change between adjacent writing objects, selecting a writing object that may need accuracy improvement of dose correction based on the rate of dose intensity change, and improving accuracy of the dose correction of the writing object that is selected and its adjacent objects.
摘要翻译：公开了一种用于粒子束写入器的剂量校正的方法和系统。该方法和系统包括读取包括剂量强度的写入对象的文件，计算相邻写入对象之间的剂量强度变化率，选择可能需要基于剂量强度变化率的剂量校正的精度改善的写入对象，以及提高所选书写对象及其相邻对象的剂量校正的准确性。

10. 发明申请

WO2008094343A1 METHOD AND SYSTEM FOR LOGIC DESIGN FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：用于细胞投影粒子束光刻的逻辑设计的方法和系统
公开(公告)号：WO2008094343A1
公开(公告)日：2008-08-07
申请号：PCT/US2007/085822
申请日：2007-11-29
申请人： D2S, INC. , FUJIMURA, Akira , MITSUHASHI, Takashi , YOSHIDA, Kenji
发明人： FUJIMURA, Akira , MITSUHASHI, Takashi , YOSHIDA, Kenji
IPC分类号： G06F17/50
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20
摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes predefining a stencil design having a plurality of cell patterns with information from a cell library, fabricating the stencil design, synthesizing a functional description into a logic circuit design after predefining the stencil design so that one or more characteristics of the stencil design are considered during synthesizing of the functional description into the logic circuit design, optimizing the logic circuit design, generating a layout design from the optimized logic circuit design, and forming the logic circuit on a substrate according to the stencil design and the layout design.
摘要翻译：用于粒子束光刻的方法，例如电子束（EB）光刻，包括预定义具有多个单元图案的模板设计，其具有来自单元库的信息，制造模板设计，在预定义之后将功能描述合成为逻辑电路设计模板设计使得在将功能描述合成到逻辑电路设计中考虑了模板设计的一个或多个特性，优化逻辑电路设计，从优化的逻辑电路设计产生布局设计，并且形成逻辑电路根据模板设计和布局设计的基材。

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