专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2023003918A2 METHODS AND SYSTEMS TO DETERMINE PARASITICS FOR SEMICONDUCTOR OR FLAT PANEL DISPLAY FABRICATION 审中-公开
公开(公告)号：WO2023003918A2
公开(公告)日：2023-01-26
申请号：PCT/US2022/037648
申请日：2022-07-19
申请人： D2S, INC.
发明人： FUJIMURA, Akira , SHIRALI, Nagesh , ORIORDAN, Donald
IPC分类号： G06F30/27 , G06F30/392 , G06F30/398 , G06F30/18 , G06N20/00
摘要： Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.

2. 发明申请

WO2012118621A2 METHOD AND SYSTEM FOR DESIGN OF ENHANCED PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：用于填充粒子束光刻的增强图案的设计方法和系统
公开(公告)号：WO2012118621A2
公开(公告)日：2012-09-07
申请号：PCT/US2012/025328
申请日：2012-02-16
申请人： D2S, INC. , FUJIMURA, Akira , HAGIWARA, Kazuyuki , MEIER, Stephen F. , BORK, Ingo
发明人： FUJIMURA, Akira , HAGIWARA, Kazuyuki , MEIER, Stephen F. , BORK, Ingo
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
摘要翻译：提出了一种用于压裂或掩模数据准备的方法和系统，其中产生重叠射击以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。在各种实施例中，改进可能影响路径或线的端部，或方形或近似正方形的图案。模拟用于确定将在表面上产生的图案。

3. 发明申请

WO2011025795A1 METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH VARIABLE BEAM BLUR 审中-公开
标题翻译：使用带有可变光束的电荷粒子束光刻制造表面的方法和系统
公开(公告)号：WO2011025795A1
公开(公告)日：2011-03-03
申请号：PCT/US2010/046559
申请日：2010-08-24
申请人： D2S, INC. , HAGIWARA, Kazuyuki , FUJIMURA, Akira
发明人： HAGIWARA, Kazuyuki , FUJIMURA, Akira
IPC分类号： H01J37/317 , G03F1/14 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/68
摘要： A charged particle beam writer system is disclosed comprising a generator for a charged particle beam having a beam blur radius, wherein the beam blur radius may be varied from shot to shot, or between two or more groups of shots. A method for fracturing or mask data preparation or optical proximity correction is also disclosed comprising assigning a beam blur radius variation to each calculated charged particle beam writer shot. A method for forming a pattern on a surface is also disclosed comprising using a charged particle beam writer system and varying the beam blur radius from shot to shot. A method for manufacturing an integrated circuit using optical lithography is also disclosed, comprising using a charged particle beam writer system to form a pattern on a reticle, and varying the beam blur radius of the charged particle beam writer system from shot to shot.
摘要翻译：公开了一种带电粒子束写入器系统，其包括用于具有束模糊半径的带电粒子束的发生器，其中光束模糊半径可以从射击到射击，或者在两组或多组镜头之间变化。还公开了一种用于压裂或掩模数据准备或光学邻近校正的方法，其包括将光束模糊半径变化分配给每个计算的带电粒子束写入器镜头。还公开了一种用于在表面上形成图案的方法，其包括使用带电粒子束写入器系统并改变射束模糊半径从射击到射击。还公开了使用光刻法制造集成电路的方法，包括使用带电粒子束写入器系统在掩模版上形成图案，并且将带电粒子束写入器系统的光束模糊半径从镜头改变为镜头。

4. 发明申请

WO2008064155A3 STENCIL DESIGN AND METHOD FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
公开(公告)号：WO2008064155A3
公开(公告)日：2008-05-29
申请号：PCT/US2007/085097
申请日：2007-11-19
申请人： D2S, INC. , YOSHIDA, Kenji , MITSUHASHI, Takashi , MATSUSHITA, Shohei , FUJIMURA, Akira
发明人： YOSHIDA, Kenji , MITSUHASHI, Takashi , MATSUSHITA, Shohei , FUJIMURA, Akira
IPC分类号： G21K5/10
摘要： A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.

5. 发明申请

WO2020240322A1 METHOD AND SYSTEM FOR DETERMINING A CHARGED PARTICLE BEAM EXPOSURE FOR A LOCAL PATTERN DENSITY 审中-公开
公开(公告)号：WO2020240322A1
公开(公告)日：2020-12-03
申请号：PCT/IB2020/054546
申请日：2020-05-13
申请人： D2S, INC.
发明人： FUJIMURA, Akira , ZABLE, Harold Robert , SHIRALI, Nagesh , GUTHRIE, William E. , PEARMAN, Ryan
IPC分类号： H01J37/302 , H01J37/317
摘要： A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes inputting an original set of exposure information for the area and inputting a target post-proximity effect correction (PEC) maximum dose. A local pattern density is calculated for the area of the pattern based on the original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PEC maximum dose.

6. 发明申请

WO2015138362A1 METHOD AND SYSTEM FOR FORMING A PATTERN ON A SURFACE USING MULTI-BEAM CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用多束电荷粒子束光刻法在表面形成图案的方法和系统
公开(公告)号：WO2015138362A1
公开(公告)日：2015-09-17
申请号：PCT/US2015/019545
申请日：2015-03-10
申请人： D2S, INC.
发明人： FUJIMURA, Akira
IPC分类号： G06F17/50
CPC分类号： H01J37/3175
摘要： A method for fracturing or mask data preparation is disclosed in which a plurality of single-beam charged particle beam shots is used to create a plurality of multi-beam shots, where multi-beam exposure information is determined for each of the single-beam shots, and then the resulting multi-beam exposure information is used to generate a set of multi-beam shots. Additionally, a method for fracturing or mask data preparation is disclosed in which a plurality of single-beam shots is used to generate a set of multi-beam shots by calculating an image which the single-beam shots would form on a surface.
摘要翻译：公开了一种用于压裂或掩模数据准备的方法，其中使用多个单束带电粒子束拍摄来产生多个多光束照射，其中为每个单光束照射确定多光束曝光信息，然后使用所得到的多光束曝光信息来产生一组多光束照射。此外，公开了一种用于压裂或掩模数据准备的方法，其中使用多个单光束拍摄来通过计算单波束拍摄将在表面上形成的图像来生成一组多光束拍摄。

7. 发明申请

WO2014071091A1 METHOD AND SYSTEM FOR IMPROVING CRITICAL DIMENSION UNIFORMITY USING SHAPED BEAM LITHOGRAPHY 审中-公开
标题翻译：使用形状光束光刻技术改进关键尺寸均匀性的方法和系统
公开(公告)号：WO2014071091A1
公开(公告)日：2014-05-08
申请号：PCT/US2013/067904
申请日：2013-11-01
申请人： D2S, INC.
发明人： FUJIMURA, Akira , PEARMAN, Ryan , AADAMOV, Anatoly
IPC分类号： H01J37/30
CPC分类号： G03F7/2059 , B82Y10/00 , B82Y40/00 , G03F7/20 , G03F7/2051 , G03F7/2065 , G03F7/70533 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： A method for forming a pattern on a surface using charged particle beam lithography is disclosed, where the shots in an ordered set of input shots are modified within a subfield to reduce either a thermal variation or a maximum temperature of the surface during exposure by the charged particle beam writer. A method for fracturing or mask data processing is also disclosed, where an ordered set of shots is generated which will expose at least one subfield of a surface using a shaped beam charged particle beam writer, and where a temperature or a thermal variation generated on the surface during the exposure of one subfield is calculated. Additionally, a method for forming a pattern on a surface with an ordered set of shots using charged particle beam lithography is disclosed, in which a blanking period following a shot is lengthened to reduce the maximum temperature of the surface.
摘要翻译：公开了一种使用带电粒子束光刻法在表面上形成图案的方法，其中有序的一组输入镜头中的镜头在子场内被修改，以减少曝光期间表面的热变化或最大温度粒子束写入器。还公开了一种用于压裂或掩模数据处理的方法，其中产生有序的一组镜头，其将使用成形束带电粒子束写入器暴露表面的至少一个子场，并且其中在计算一个子场曝光期间的表面。另外，公开了一种使用带电粒子束光刻法在有序的镜头组合的表面上形成图案的方法，其中延长了镜头后的消隐期以降低表面的最高温度。

8. 发明申请

WO2011143013A2 METHOD FOR INTEGRATED CIRCUIT DESIGN AND MANUFACTURE USING DIAGONAL MINIMUM-WIDTH PATTERNS 审中-公开
标题翻译：集成电路设计与制造方法使用对角最小宽度图案
公开(公告)号：WO2011143013A2
公开(公告)日：2011-11-17
申请号：PCT/US2011/035082
申请日：2011-05-03
申请人： D2S, INC. , FUJIMURA, Akira , CHAU, Larry Lam , NGUYEN, Tam Dinh Thanh
发明人： FUJIMURA, Akira , CHAU, Larry Lam , NGUYEN, Tam Dinh Thanh
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5077 , H01L27/0207 , H01L27/11
摘要： Methods for designing and manufacturing an integrated circuit are disclosed, in which the physical design process for a standard cell or cells utilizes a preferred diagonal direction for minimum-width patterns on at least one layer, where the standard cell or cells are used in the layout of an integrated circuit. The methods also include forming the patterns on a photomask using model-based fracturing techniques with charged particle beam simulation, and forming the patterns on a substrate such a silicon wafer using the photomask and an optical lithographic process with directional illumination which is optimized for the preferred diagonal direction.
摘要翻译：公开了用于设计和制造集成电路的方法，其中标准单元或单元的物理设计过程在至少一层上利用最小宽度图案的优选对角线方向，其中在布局中使用标准单元或单元的集成电路。所述方法还包括使用基于压缩技术的带有带电粒子束模拟的基于模型的压裂技术在光掩模上形成图案，以及使用光掩模和光定向照明的光学方法在诸如硅晶片的衬底上形成图案，所述光刻工艺针对优选对角方向。

9. 发明申请

WO2011078968A2 METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES 审中-公开
标题翻译：使用多次曝光通道的带电粒子束光刻法分割图案的方法和系统
公开(公告)号：WO2011078968A2
公开(公告)日：2011-06-30
申请号：PCT/US2010/059345
申请日：2010-12-07
申请人： D2S, INC. , ZABLE, Harold Robert , FUJIMURA, Akira
发明人： ZABLE, Harold Robert , FUJIMURA, Akira
IPC分类号： G03F7/20 , G06F17/50 , G06F19/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction using a plurality of exposure passes is disclosed. In one embodiment, base dosages for the plurality of exposure passes are different from each other. In another embodiment, the union of shots from one of the exposure passes is different than the union of shots from a different exposure pass. In a further embodiment, the sum of the base dosage levels for the plurality of exposure passes does not equal a normal dosage. Similar methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed.
摘要翻译：在使用带电粒子束光刻的半导体生产领域中，公开了一种使用多个曝光通道进行压裂或掩模数据准备或邻近效应校正的方法和系统。在一个实施方案中，用于多个曝光通道的基础剂量彼此不同。在另一个实施例中，来自曝光通道之一的镜头的联合不同于来自不同曝光次数的镜头的联合。在另一个实施方案中，多次暴露通过的基础剂量水平的总和不等于正常剂量。还公开了用于制造掩模版和制造集成电路的类似方法。

10. 发明申请

WO2011022703A1 METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING CHARACTER PROJECTION LITHOGRAPHY WITH VARIABLE MAGNIFICATION 审中-公开
标题翻译：使用可变放大的字符投影平移制造表面的方法和系统
公开(公告)号：WO2011022703A1
公开(公告)日：2011-02-24
申请号：PCT/US2010/046239
申请日：2010-08-20
申请人： D2S, INC. , FUJIMURA, Akira
发明人： FUJIMURA, Akira
IPC分类号： H01J37/317 , G03F1/14 , G03F7/20
CPC分类号： G03F7/2047 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , Y10S430/143
摘要： A character projection charged particle beam writer system is disclosed comprising a variable magnification reduction lens which will allow different shot magnifications on a shot by shot basis. A method for fracturing or mask data preparation or optical proximity correction is also disclosed comprising assigning a magnification to each calculated charged particle beam writer shot. A method for forming a pattern on a surface is also disclosed comprising using a charged particle beam writer system and varying the magnification from shot to shot. A method for manufacturing an integrated circuit using optical lithography is also disclosed, comprising using a charged particle beam writer system to form a pattern on a reticle, and varying the magnification of the charged particle beam writer system from shot to shot.
摘要翻译：公开了一种字符投影带电粒子束写入器系统，其包括可变放大倍率减小透镜，其可以在逐个镜头的基础上允许不同的镜头放大率。还公开了一种用于压裂或掩模数据准备或光学邻近校正的方法，包括为每个计算的带电粒子束写入器拍摄分配放大率。还公开了一种用于在表面上形成图案的方法，包括使用带电粒子束写入器系统并且改变从镜头到镜头的放大率。还公开了一种使用光刻法制造集成电路的方法，包括使用带电粒子束写入器系统在掩模版上形成图案，并且将带电粒子束写入器系统的放大率从镜头改变为镜头。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式