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1. 发明申请

WO2010052541A3 OXIDATION AND CLEANING PROCESS FOR SILICON WAFERS 审中-公开
标题翻译：硅晶片的氧化和清洗工艺
公开(公告)号：WO2010052541A3
公开(公告)日：2010-10-07
申请号：PCT/IB2009007310
申请日：2009-11-04
申请人： CT THERM PHOTOVOLTAICS TECHNOL , ESTURO-BRETON AINHOA , KELLER STEFFEN
发明人： ESTURO-BRETON AINHOA , KELLER STEFFEN
IPC分类号： H01L21/306 , H01L21/02 , H01L31/18
CPC分类号： H01L21/306 , H01L21/02052
摘要： Oxidation and cleaning process for silicon wafers, in which the silicon wafers are provided with a silicon oxide layer on at least part of their surface (12; 24), before they are etched in an alkaline etching solution (14;, 26) and they are etched in a solution (16) which contains an acid which oxidises metallic impurities, whereby at least a portion of the silicon oxide layer is exposed unprotected to the etching solution and the acid, and in which the silicon wafers are rinsed in deionised water after the etching processes (18), whereby the at least one unprotected portion of the silicon oxide layer is at least partly left on the silicon wafers and the silicon wafers are dried (20) after rinsing (18; 32).
摘要翻译：硅晶片的氧化和清洁过程，其中硅晶片在它们在碱性蚀刻溶液（14; 26）中蚀刻之前在其表面的至少一部分上提供有氧化硅层（12; 24），并且它们在含有氧化金属杂质的酸的溶液（16）中被蚀刻，由此至少一部分氧化硅层未被保护地暴露于蚀刻溶液和酸，并且其中硅晶片在去离子水中被冲洗蚀刻工艺（18），由此氧化硅层的至少一个未受保护部分至少部分地留在硅晶片上，并且在冲洗（18; 32）之后干燥硅晶片（20）。

2. 发明申请

WO2012022329A3 METHOD FOR LOCALLY REMOVING A SURFACE LAYER, AND SOLAR CELL 审中-公开
标题翻译：方法表层及太阳能电池的局部切除
公开(公告)号：WO2012022329A3
公开(公告)日：2012-04-19
申请号：PCT/DE2011075152
申请日：2011-06-28
申请人： CENTROTHERM PHOTOVOLTAICS AG , KUEHN TINO , TEPPE ANDREAS , FRIESS TOBIAS , ESTURO-BRETON AINHOA , KELLER STEFFEN
发明人： KUEHN TINO , TEPPE ANDREAS , FRIESS TOBIAS , ESTURO-BRETON AINHOA , KELLER STEFFEN
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/18
CPC分类号： H01L29/34 , H01L21/268 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for locally removing a surface layer (36) which is applied to a texture (30) of a textured substrate, wherein the texture (30) has a multiplicity of structure elements (32) with structure tips (34) and/or structure edges, having the steps of locally irradiating the texture (30) through the surface layer (36) by means of laser radiation which at least partially penetrates through the surface layer (36) and which is at least partially absorbed by the texture (30), the intensity of which laser radiation is set such that the texture (30) is locally melted by means of the laser radiation and subsequently recrystallized (16), wherein the surface layer (36) is locally opened in the region of the structure tips (34) and/or of the structure edges such that the openings around the structure tips (34) and/or the structure edges after the local irradiation of the texture (30) are completely surrounded by continuous, non-open regions of the surface layer (36), and removing (18) the recrystallized regions (38) of the texture (30) in an etching step by means of an etching medium, wherein the surface layer (36) outside the recrystallized regions (38) is used as an etching mask against the etching medium, and to a solar cell (70).
摘要翻译：一种用于局部去除的表面层（36），其被施加到织构的衬底的织构（30）的过程中，织构（30）包括多个结构元件（32），其具有结构顶部（34）和/或具有结构的边缘，其包括以下步骤通过表面层的装置中的纹理（30）通过该表面层（36）的局部照射（36）至少部分地穿透和从纹理（30）至少部分地吸收激光辐射，其强度被设定为使得所述纹理（30）借助于激光辐射局部熔化和下面（16）中重结晶，其特征在于，使得根据纹理（30）的局部照射到尖端的结构中的开口在结构尖端的区域中的表面层（36）（34）和/或结构边缘局部地打开的（34）和/或围绕的表面层的连续的开放区域边缘结构（36）v 其中，从所述再结晶区域的表面层（36）远（38）用作抗蚀刻介质的蚀刻掩模通过蚀刻介质的装置在蚀刻步骤中的纹理（30）的再结晶区域（38）的包围ollständig，并除去（18），和太阳能电池（70）。

3. 发明申请

WO2010052565A3 METHOD FOR MANUFACTURING A SOLAR CELL WITH A TWO-STAGE DOPING 审中-公开
标题翻译：用于制造具有两级放电的太阳能电池的方法
公开(公告)号：WO2010052565A3
公开(公告)日：2012-04-26
申请号：PCT/IB2009007380
申请日：2009-11-09
申请人： CENTROTHERM PHOTOVOLTAICS AG , ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
发明人： ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： Method for manufacturing a solar cell with a two-stage doping (88, 89) including the following method steps of forming (14, 48) an oxide layer (82), which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate (80), of forming (16; 50) an opening in the oxide layer (82) in at least one high-doping region (88) by removing (16; 50) the oxide layer (82) in this high-doping region (88), of diffusing (28) the first dopant into the at least one high- doping region (88) of the solar cell substrate (80) through the opening and of diffusing (28) the first dopant into the solar cell substrate (80) through the oxide layer (82), wherein the diffusing-in (28) through the openings and through the oxide layer (82) takes place at the same time in a common diffusion step and the solar cell substrate (80) is diffused (28) in the common diffusion step (28) in an at least partially hydrophilic state.
摘要翻译：一种用于制造具有两级掺杂（88,89）的太阳能电池的方法，包括以下方法步骤：在至少一个部分上形成（14,48）可被第一掺杂剂渗透的氧化物层（82）通过去除（16; 50）氧化物层（16; 50）在至少一个高掺杂区域（88）中在氧化物层（82）中形成（16; 50）开口的太阳能电池基板（80）的表面; 82）在该高掺杂区域（88）中通过开口将第一掺杂剂扩散（28）至太阳能电池基板（80）的至少一个高掺杂区域（88）并扩散（28）第一掺杂剂通过氧化物层（82）进入太阳能电池基板（80），其中通过开口和通过氧化物层（82）的扩散（28）在公共扩散步骤中同时进行，并且太阳能电池基板（80）在共同扩散步骤（28）中以至少部分亲水状态扩散（28）。

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