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    • 3. 发明申请
    • COMPOSITE HIGH REFLECTIVITY LAYER
    • 复合高反射层
    • WO2010077287A1
    • 2010-07-08
    • PCT/US2009/006447
    • 2009-12-07
    • CREE, INC.IBBESTON, JamesLI, TingHANSEN, Monica
    • IBBESTON, JamesLI, TingHANSEN, Monica
    • H01L33/46G02B5/08
    • H01L33/10H01L33/46H01L2224/48091H01L2224/48247H01L2924/00014
    • A high efficiency light emitting diode with a composite high reflectivity layer (62) integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises ah LED and a composite high reflectivity layer (62), integral to the LED to reflect light emitted from the active region (54). The composite layer comprises a first layer (66), and alternating plurality of second (68) and third (70) layers on the first layer (66), and a reflective (71, 126) layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias (128) can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.
    • 一种具有与所述LED集成的复合高反射层(62)的高效率发光二极管,以提高发射效率。 一种发光二极管(LED)芯片的一个实施例包括:一个LED和一个复合的高反射率层(62),它与LED成一体,以反射从有源区域(54)发射的光。 复合层包括第一层(66)和在第一层(66)上交替的多个第二(68)和第三(70)层,以及在所述多个第二层(66)的最上面的反射层(71,126) 和第三层。 第二层和第三层具有不同的折射率,并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层,可以通过复合层包括导电通孔(128),以允许电信号通过复合层到达LED。
    • 10. 发明申请
    • LIGHT EMITTING DIODE WITH POROUS SIC SUBSTRATE AND METHOD FOR FABRICATING
    • 具有多孔SIC基板的发光二极管及其制造方法
    • WO2005034254A1
    • 2005-04-14
    • PCT/US2004/031050
    • 2004-09-21
    • CREE, INC.
    • LI, TingIBBETSON, JamesKELLER, Bernd
    • H01L33/00
    • H01L33/20H01L21/3063H01L31/0236H01L33/16H01L2224/16245H01L2924/10158
    • A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
    • 一种在半导体材料的表面上形成多孔层的方法和装置,其中提供电解质并与半导体材料层的一个或多个表面接触。 电解质被加热并且横跨所述电解质和半导体材料引入电流,导致电流在电解质和半导体材料之间流动。 电流在与电解质接触的半导体材料的一个或多个表面上形成多孔层。 具有多孔层的半导体材料可以用作发光体的基板。 可以在衬底上形成半导体发射区域。 发射区域能够响应于偏压而全向发光,多孔层增强了通过衬底的发射区域光的提取。