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1. 发明申请

WO2005048418A8 CLADDING-PUMPED QUASI 3-LEVEL FIBER LASER/AMPLIFIER 审中-公开
标题翻译： CLADDING-PUMPED QUASI 3级光纤激光/放大器
公开(公告)号：WO2005048418A8
公开(公告)日：2007-03-15
申请号：PCT/US2004037447
申请日：2004-11-08
申请人： CORNING INC , HUGHES LAWRENCE C JR , LIU XINGSHENG , WALTON DONNELL T , ZAH CHUNG-EN , ZENTENO LUIS A
发明人： HUGHES LAWRENCE C JR , LIU XINGSHENG , WALTON DONNELL T , ZAH CHUNG-EN , ZENTENO LUIS A
IPC分类号： H01S3/067 , H01S3/094 , H01S3/0941
CPC分类号： H01S3/06708 , H01S3/067 , H01S3/06716 , H01S3/094 , H01S3/094007 , H01S3/09415 , H01S5/2036
摘要： An optically active fiber (30) is disclosed for making a fiber laser (18) or an amplifier (16) for optically pumping by a broad area laser diode for operation in the 1.5 micron band. This double-clad structured active fiber (30) has a core (34), doped with an optically excitable erbium ion having a quasi-three-level transition. The core (34) has a core refractive index and a core cross-sectional area. An inner cladding (32) surrounds the core (34). The inner cladding (32) has an inner cladding refractive index less than the core refractive index, an inner cladding cross-sectional area between 2 and 25 times greater than that of the core cross-sectional area, and an aspect ratio greater than 1.5:1. An outer cladding (36) surrounds the inner cladding (32) and has an outer cladding refractive index less than the inner cladding refractive index.
摘要翻译：公开了一种用于制造光纤激光器（18）或放大器（16）的光学有源光纤（30），用于通过广域激光二极管光学泵浦以在1.5微米波段内操作。这种双包层结构的有源光纤（30）具有掺杂有具有准三电平转换的光学可激发的铒离子的芯（34）。芯（34）具有芯折射率和芯横截面积。内包层（32）围绕芯部（34）。内包层（32）具有小于芯折射率的内包层折射率，内包层横截面积比核心横截面积大2至25倍，纵横比大于1.5： 1。外包层（36）围绕内包层（32）并且具有小于内包层折射率的外包层折射率。

2. 发明申请

WO2008013712A8 SEMICONDUCTOR LASER MICRO-HEATING ELEMENT STRUCTURE 审中-公开
标题翻译：半导体激光微加热元件结构
公开(公告)号：WO2008013712A8
公开(公告)日：2008-04-24
申请号：PCT/US2007016260
申请日：2007-07-18
申请人： CORNING INC , HU MARTIN H , LIU XINGSHENG , ZAH CHUNG-EN
发明人： HU MARTIN H , LIU XINGSHENG , ZAH CHUNG-EN
IPC分类号： H01S5/026 , G02F1/377 , H01S5/024 , H01S5/06 , H01S5/0625 , H01S5/12 , H01S5/22 , H01S5/223
CPC分类号： H01S5/0612 , G02F1/37 , H01S5/0261 , H01S5/0425 , H01S5/06256 , H01S5/12 , H01S5/22 , H01S5/2231
摘要： A semiconductor laser (10) is provided comprising a semiconductor substrate (20), an active region (30), a ridge waveguide (40), a driving electrode structure (50, 52, 54), and a micro-heating element structure (62, 64). The nnicro-heating element structure comprises a pair of heating element strips (62, 64) extending along the longitudinal dimension, of the semiconductor laser. The heating element strips are on opposite sides of the ridge waveguide such that one of the heating element strips extends along one side of the ridge waveguide while a remaining heating element strip extends along another side of the ridge waveguide. The semiconductor laser comprises a DBR laser comprising a wavelength selective region (12), a phase matching region (14), and a gain region (16) extending generally along a direction of said ridge waveguide; and said heating element strips of said micro-heating element structure extend along at least a portion of at least one of said wavelength selective, phase, and gain regions.
摘要翻译：提供一种半导体激光器（10），包括半导体衬底（20），有源区（30），脊波导（40），驱动电极结构（50,52,54）和微加热元件结构 62,64）。微加热元件结构包括沿半导体激光器的纵向尺寸延伸的一对加热元件条（62,64）。加热元件带位于脊状波导的相对侧，使得加热元件条中的一个沿着脊状波导的一侧延伸，而剩余的加热元件条沿脊状波导的另一侧延伸。半导体激光器包括一个包括波长选择区域（12），相位匹配区域（14）和大致沿所述脊波导方向延伸的增益区域（16）的DBR激光器; 并且所述微加热元件结构的所述加热元件条沿着所述波长选择，相位和增益区域中的至少一个的至少一部分延伸。

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