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1. 发明申请

WO2006058040A3 SEMICONDUCTOR DEVICES ON MISORIENTED SUBSTRATES 审中-公开
标题翻译：半导体器件在微观基板上的应用
公开(公告)号：WO2006058040A3
公开(公告)日：2006-10-05
申请号：PCT/US2005042390
申请日：2005-11-21
申请人： CORNING INC , CANEAU CATHERINE G , NISHIYAMA NOBUHIKO , GURYANOV GEORGIY
发明人： CANEAU CATHERINE G , NISHIYAMA NOBUHIKO , GURYANOV GEORGIY
IPC分类号： H01L29/06 , H01L29/15 , H01L29/205 , H01L31/12 , H01L33/02 , H01L33/16 , H01S5/183 , H01S5/30 , H01S5/323
CPC分类号： H01S5/18355 , B82Y20/00 , H01L29/205 , H01L33/025 , H01L33/16 , H01S5/18308 , H01S5/18327 , H01S5/18358 , H01S5/18394 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3202 , H01S5/3235 , H01S5/34313 , H01S2301/14 , H01S2304/04
摘要： A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.
摘要翻译：半导体器件（100）包括具有从{100}面倾斜大约8至40度范围内的表面积的取向错误的衬底（240）。在表面区域上生长掺杂有碳（C）的第一半导体材料的至少一个高掺杂P型半导体层（106）。至少一个第二半导体材料的高掺杂N型半导体层（104）生长在该表面区域上并且在该至少一个高掺杂P型半导体层（106）附近。在表面区域上生长适度掺杂的P型层（60），其中适度掺杂的P型层60具有掺杂有选自Zn，Be，Cd和镁。器件100包括具有在取向错误的衬底240上的隧道结（110）和由AlGaInAs / InP或GaInAs / InP层（2308/2302）组成的半导体DBR（230）的VCSEL。

2. 发明申请

WO2006031984A3 METHOD OF MANUFACTURING AN INP BASED VERTICAL CAVITY SURFACE EMITTING LASER AND DEVICE PRODUCED THEREFROM 审中-公开
标题翻译：制造基于垂直孔表面发射激光器的方法及其制造的器件
公开(公告)号：WO2006031984A3
公开(公告)日：2006-04-27
申请号：PCT/US2005032984
申请日：2005-09-16
申请人： CORNING INC , CANEAU CATHERINE G , HALL BENJAMIN L , NISHIYAMA NOBUHIKO , ZAH CHUNG-EN
发明人： CANEAU CATHERINE G , HALL BENJAMIN L , NISHIYAMA NOBUHIKO , ZAH CHUNG-EN
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/34313
摘要： A method of fabricating an InP-based VCSEL (1) having a high reflectivity DBR (3) for emitting light having a center wavelength of around 1.30 micrometers. The method includes selecting an operating wavelength, determining the photon energy corresponding to the wavelength, selecting a maximum operating temperature, and fabricating at least half of the high index layers (3a) of the DBR (3) from material that can be epitaxially grown on the substrate to have a band gap equal to or greater than the sum of the photon energy plus the sum of the maximum operating temperature plus 110 divided by 1.96. Using high index layers (3a) with such a band gap creates a sufficient difference in refractive index of the alternating layers in the DBR (3), while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, obviating the need for using a DBR (3) bonded or metamorphically grown on the substrate (2).
摘要翻译：一种制造具有高反射率DBR（3）的InP基VCSEL（1）的方法，用于发射中心波长约1.30微米的光。该方法包括选择工作波长，确定对应于波长的光子能量，选择最大工作温度，以及从可外延生长的材料制造DBR（3）的至少一半的高折射率层（3a）该衬底具有等于或大于光子能量之和加上最大工作温度加总和加上除以1.96之间的带隙。使用具有这种带隙的高折射率层（3a）在DBR（3）中产生交替层的折射率的足够差异，同时保持光吸收低以保持反射率至少达到所需的最高温度，从而消除需要使用在基板（2）上粘结或变质生长的DBR（3）。

3. 发明申请

WO2013070484A2 MULTI-WAVELENGTH DBR LASER 审中-公开
标题翻译：多波长DBR激光
公开(公告)号：WO2013070484A2
公开(公告)日：2013-05-16
申请号：PCT/US2012063000
申请日：2012-11-01
申请人： CORNING INC , CANEAU CATHERINE G , XIE FENG , ZAH CHUNG-EN
发明人： CANEAU CATHERINE G , XIE FENG , ZAH CHUNG-EN
IPC分类号： H01S5/06
CPC分类号： B82Y20/00 , H01S5/0612 , H01S5/06256 , H01S5/1215 , H01S5/3401 , H01S5/3402
摘要： A multi-wavelength distributed Bragg reflector (DBR) laser diode is provided including front and rear DBR sections and a plurality of dedicated tuning signal control nodes. The front DBR section includes a plurality of front wavelength selective grating sections defining a plurality of distinct grating periodicities lambda1*, lambda2*... corresponding to distinct Bragg wavelengths lambdaS1*, lambdaS2*.... The rear DBR section comprises a plurality of rear wavelength selective grating sections defining a plurality of distinct grating periodicities lambda1, lambda2... corresponding to distinct Bragg wavelengths lambdaS1, lambdaS2.... The tuning signal control nodes are associated with corresponding front wavelength selective grating sections, rear wavelength selective grating sections, or both, such that tuning signals applied to one or more of the dedicated tuning signal control nodes spectrally aligns select Bragg wavelengths lambdaS1*, lambdaS2*... of the front DBR section with a selected distinct Bragg wavelengths lambdaS1, lambdaS2... of the rear DBR section.
摘要翻译：提供了多波长分布布拉格反射器（DBR）激光二极管，其包括前后DBR部分和多个专用调谐信号控制节点。前DBR部分包括多个前波长选择光栅部分，其限定对应于不同的布拉格波长λS1*，λS2*的多个不同的光栅周期λ1*，λ2* ...。后DBR部分包括多个后波长选择光栅部分限定对应于不同布拉格波长λS1，λS2的多个不同的光栅周期性λ1，λ2...。调谐信号控制节点与相应的前波长选择光栅部分相关联，后波长选择光栅部分或两者，使得施加到一个或多个专用调谐信号控制节点的调谐信号将前DBR部分的选择布拉格波长λS1*，λS2* ...与选定的不同布拉格波长λS1，λS2... 的后DBR部分。

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