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1. 发明申请

WO2010077810A3 MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS 审中-公开
标题翻译： MQW激光结构包括多个MQW区域
公开(公告)号：WO2010077810A3
公开(公告)日：2011-03-31
申请号：PCT/US2009067853
申请日：2009-12-14
申请人： CORNING INC , BHAT RAJARAM , NAPIERALA JEROME , SIZOV DMITRY , ZAH CHUNG-EN
发明人： BHAT RAJARAM , NAPIERALA JEROME , SIZOV DMITRY , ZAH CHUNG-EN
IPC分类号： H01S5/20 , H01S5/34
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供了包括有源和/或无源MQW区域的多量子阱激光器结构。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

2. 发明申请

WO2011028855A9 ENHANCED P-CONTACTS FOR LIGHT EMITTING DEVICES 审中-公开
标题翻译：增强用于发光装置的P-CONT
公开(公告)号：WO2011028855A9
公开(公告)日：2011-04-28
申请号：PCT/US2010047606
申请日：2010-09-02
申请人： BHAT RAJARAM , NAPIERALA JEROME , SIZOV DMITRY , XI JINGQUN , ZAH CHUNG-EN , CORNING INC
发明人： BHAT RAJARAM , NAPIERALA JEROME , SIZOV DMITRY , XI JINGQUN , ZAH CHUNG-EN
IPC分类号： H01L33/02 , H01L33/32
CPC分类号： H01L33/02 , H01L33/32 , H01L33/40
摘要： An optoelectronic light emitting semiconductor device is provided comprising an active region (10), a p-type Group III nitride layer (20), an n-type Group III nitride layer (30), a p-side metal contact layer (40), an n-side metal contact layer (50), and an undoped tunneling enhancement layer (60). The p-side metal contact layer is characterized by a work function W satisfying the following relation: W = e - AFF ± 0.025eV where e - AFF is the electron affinity of the undoped tunneling enhancement layer. The undoped tunneling enhancement layer and the p-type Group III nitride layer comprise conduction and valence energy bands. The top of the valence band V1 of the undoped tunneling enhancement layer is above the top of the valence band V2 of the p-type Group III nitride layer at the band offset interface to generate a capacity for a relatively high concentration of holes in the undoped tunneling enhancement layer at the band offset interface. Additional embodiments are disclosed and claimed.
摘要翻译：提供一种光电子发光半导体器件，其包括有源区（10），p型III族氮化物层（20），n型III族氮化物层（30），p侧金属接触层（40），n侧金属接触层（50）和未掺杂的隧道增强层（60）。 p侧金属接触层的特征在于满足以下关系的功函数W：e = AFF±0.025eV其中e-AFF是未掺杂的隧道增强层的电子亲和力。未掺杂的隧道增强层和p型III族氮化物层包括导电和价态能带。未掺杂的隧道增强层的价带V1的顶部在带偏移界面处高于p型III族氮化物层的价带V2的顶部，以产生未掺杂的较高浓度的孔的能力隧道增强层在带偏移接口。公开和要求保护附加实施例。

3. 发明申请

WO2012039997A2 GROUP III NITRIDE-BASED GREEN-LASER DIODES AND WAVEGUIDE STRUCTURES THEREOF 审中-公开
标题翻译： III族氮化物基绿色激光二极管及其波导结构
公开(公告)号：WO2012039997A2
公开(公告)日：2012-03-29
申请号：PCT/US2011051343
申请日：2011-09-13
申请人： CORNING INC , BHAT RAJARAM , SIZOV DMITRY , ZAH CHUNG-EN
发明人： BHAT RAJARAM , SIZOV DMITRY , ZAH CHUNG-EN
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2018 , H01S5/2031 , H01S5/3211
摘要： Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN. Optical mode is shifted away from high acceptor concentrations in p-type layers through manipulation of indium concentration and thickness of the n-side waveguide layer. Dopant and compositional profiles of the p-side cladding layer and the p-side waveguide layer are tailored to reduce optical loss and increased wall plug efficiency.
摘要翻译： III族氮化物基激光二极管包括由n掺杂（Al，In）GaN形成的n侧包覆层，由n掺杂（Al）InGaN形成的n侧波导层，有源区，p侧由p掺杂（Al）InGaN形成的波导层和由p掺杂（Al，In）GaN形成的p侧包覆层。通过控制n侧波导层的铟浓度和厚度，光学模式从p型层中的高受主浓度移开。 p侧包层和p侧波导层的掺杂物和组成分布曲线适合于减少光损耗和提高壁塞效率。

4. 发明申请

WO2011150135A2 ENHANCED PLANARITY IN GaN EDGE EMITTING LASERS 审中-公开
标题翻译： GaN边缘发射激光器中的增强平面图
公开(公告)号：WO2011150135A2
公开(公告)日：2011-12-01
申请号：PCT/US2011038015
申请日：2011-05-26
申请人： CORNING INC , BHAT RAJARAM
发明人： BHAT RAJARAM
IPC分类号： H01S5/10 , H01S5/343
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 2021 crystal growth plane and a glide plane. The N-side and P-side waveguiding layers comprise a GalnN/GaN or GalnN/GalnN superlattice (SL) waveguiding layers. The superlattice layers of the N-side and P-side SL waveguiding layers define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm. In accordance with another embodiment of the present disclosure, planarization can be enhanced by ensuring that the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s, regardless of whether the N-side and P-side GaN-based waveguiding layers are provided as a GalnN/GaN or GalnN/GalnN SL or as bulk waveguiding layers. In still further embodiments, planarization can be enhanced by selecting optimal SL layer thicknesses and growth rates. Additional embodiments are disclosed and claimed.
摘要翻译：提供GaN边缘发射激光器，其包括半极性GaN衬底，有源区，N侧波导层，P侧波导层，N型覆层和P型覆层。 GaN衬底限定了2021晶体生长平面和滑动平面。 N侧和P侧波导层包括GalnN / GaN或GalnN / GalnN超晶格（SL）波导层。 N侧和P侧SL波导层的超晶格层限定针对波导平面度优化的各层厚度，层厚度在约1nm至约5nm之间。根据本公开的另一实施例，可以通过确保以超过约0.09nm / s的生长速率生长N侧和P侧GaN基波导层来增强平坦化，而不管N- 作为GalnN / GaN或GalnN / GalnN SL或作为体波导层提供侧面和P侧GaN基波导层。在另外的实施例中，可以通过选择最佳SL层厚度和生长速率来增强平坦化。公开并要求保护附加实施例。

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