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1. 发明申请

WO2013025994A2 SPIN HALL EFFECT MAGNETIC APPARATUS, METHOD AND APPLICATIONS 审中-公开
标题翻译：自旋霍尔效应磁性装置，方法和应用
公开(公告)号：WO2013025994A2
公开(公告)日：2013-02-21
申请号：PCT/US2012/051351
申请日：2012-08-17
申请人： CORNELL UNIVERSITY , BUHRMAN, Robert, A. , LIU, Luqiao , RALPH, Daniel, C. , PAI, Chi-feng
发明人： BUHRMAN, Robert, A. , LIU, Luqiao , RALPH, Daniel, C. , PAI, Chi-feng
IPC分类号： G11C11/15 , H01L27/115 , H01L21/8247
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C16/30 , H01F10/3254 , H01F10/3286 , H01L43/04 , H01L43/08 , H01L43/12 , H01L43/14
摘要： An ST-MRAM structure, a method for fabricating the ST-MRAM structure and a method for operating an ST-MRAM device that results from the ST-MRAM structure each utilize a spin Hall effect base layer that contacts a magnetic free layer and effects a magnetic moment switching within the magnetic free layer as a result of a lateral switching current within the spin Hall effect base layer. This resulting ST-MRAM device uses an independent sense current and sense voltage through a magnetoresistive stack that includes a pinned layer, a non-magnetic spacer layer and the magnetic free layer which contacts the spin Hall effect base layer. Desirable non-magnetic conductor materials for the spin Hall effect base layer include certain types of tantalum materials and tungsten materials that have a spin diffusion length no greater than about five times the thickness of the spin Hall effect base layer and a spin Hall angle at least about 0.05.
摘要翻译：由ST-MRAM结构产生的ST-MRAM结构，用于制造ST-MRAM结构的方法和用于操作ST-MRAM器件的方法均利用自旋霍尔效应基础层，由于自旋霍尔效应基极层内的横向开关电流而接触磁性自由层并且实现磁性自由层内的磁矩切换。所得到的ST-MRAM器件使用通过磁阻堆栈的独立感测电流和感测电压，所述磁阻堆栈包括钉扎层，非磁性间隔层以及与自旋霍尔效应基层接触的磁性自由层。用于自旋霍尔效应基础层的期望的非磁性导体材料包括某些类型的钽材料和钨材料，其具有不大于自旋霍尔效应基础层的厚度的大约五倍的自旋扩散长度和至少自旋霍尔角约0.05。

2. 发明申请

WO2014025838A1 ELECTRICALLY GATED THREE-TERMINAL CIRCUITS AND DEVICES BASED ON SPIN HALL TORQUE EFFECTS IN MAGNETIC NANOSTRUCTURES 审中-公开
标题翻译：基于磁性纳米结构中旋转霍尔效应的电气闭合三端电路和器件
公开(公告)号：WO2014025838A1
公开(公告)日：2014-02-13
申请号：PCT/US2013/053874
申请日：2013-08-06
申请人： CORNELL UNIVERSITY
发明人： BUHRMAN, Robert, A. , RALPH, Daniel, C. , PAI, Chi-feng , LIU, Luqiao
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01L27/228 , H01L43/04 , H01L43/06 , H01L43/065 , H01L43/08 , H01L43/10
摘要： 3-terminal magnetic circuits and devices based on the spin-transfer torque (STT) effect via a combination of injection of spin-polarized electrons or charged particles by using a charge current in a spin Hall effect metal layer coupled to a free magnetic layer and application of a gate voltage to the free magnetic layer to manipulate the magnetization of the free magnetic layer for various applications, including non-volatile memory functions, logic functions and others. The charge current is applied to the spin Hall effect metal layer via first and second electrical terminals and the gate voltage is applied between a third electrical terminal and either of the first and second electrical terminals. The spin Hall effect metal layer can be adjacent to the free magnetic layer or in direct contact with the free magnetic layer to allow a spin-polarized current generated via a spin Hall effect under the charge current to enter the free magnetic layer. The disclosed 3-terminal magnetic circuits can also be applied to signal oscillator circuits and other applications.
摘要翻译：通过使用耦合到自由磁性层的旋转霍尔效应金属层中的充电电流，通过注入自旋极化电子或带电粒子的组合，基于自旋转移转矩（STT）效应的3端子磁路和装置，以及将栅极电压施加到自由磁性层以操纵用于各种应用的自由磁层的磁化，包括非易失性存储器功能，逻辑功能等。通过第一和第二电端子将充电电流施加到自旋霍尔效应金属层，并且在第三电端子和第一和第二电端子中的任一个之间施加栅极电压。旋转霍尔效应金属层可以与自由磁性层相邻或与自由磁性层直接接触，以允许在充电电流下通过旋转霍尔效应产生的自旋极化电流进入自由磁性层。公开的三端磁路也可以应用于信号振荡电路和其他应用。

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