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    • 1. 发明申请
    • APPARATUS FOR REDUCING SPACING OF BEAMS DELIVERED BY STACKED DIODE-LASER BARS
    • 用于减少堆叠二极管激光棒提供的光束间距的装置
    • WO2004111702A1
    • 2004-12-23
    • PCT/US2004/017878
    • 2004-06-08
    • COHERENT, INC.
    • ANIKITCHEV, Serguei, G.AUSTIN, Russel, R.
    • G02B27/09
    • G02B19/0057G02B19/0028G02B27/0977G02B27/283H01S3/005H01S5/4012H01S5/405
    • Apparatus for reducing spacing between a plurality of parallel, spaced apart planepolarized laser-radiation beams delivered by a stack of laser-diode bars includes a ninety degree polarization rotator, and a compound prism including a total reflecting surface and an internal polarization-selective surface parallel to each other. The polarization-selective surface is highly transmissive for radiation plane-polarized in one polarization orientation and highly reflective for radiation plane-polarized at ninety degrees to that orientation. The polarization rotator rotates the polarization of a portion of the beams. The beams are transmitted through the compound prism with the portion of polarization-rotated beams following a different path through the prism from that of the beams that are not polarization rotated. The beams exit the prism with spacing therebetween one-half of the spacing between beams entering the prism.
    • 用于减少由一叠激光二极管条提供的多个平行的,间隔开的平面偏振的激光辐射束之间的间隔的装置包括九十度偏振旋转器,以及包括全反射表面和内部偏振选择表面平行的复合棱镜 对彼此。 偏振选择性表面对于在一个偏振取向中的辐射平面偏振是高度透射的,并且对于朝向该取向的九十度的辐射平面极化是高反射性的。 偏振旋转器旋转一部分光束的偏振。 光束通过复合棱镜透射,其中偏振旋转光束的部分遵循与通过棱镜不同的路径,而不是偏振旋转的光束。 光束离开棱镜之间的间隔,进入棱镜的光束之间的间隔的一半。
    • 3. 发明申请
    • INGAN DIODE-LASER PUMPED II-VI SEMICONDUCTOR LASERS
    • INGAN二极管激光泵II-VI半导体激光器
    • WO2005124948A2
    • 2005-12-29
    • PCT/US2005/018738
    • 2005-05-27
    • COHERENT, INC.SPINELLI, Luis, A.ZHOU, HailongAUSTIN, Russel, R.
    • SPINELLI, Luis, A.ZHOU, HailongAUSTIN, Russel, R.
    • H01S5/00
    • B82Y20/00H01S3/094057H01S3/0941H01S5/005H01S5/041H01S5/141H01S5/183H01S5/34333H01S5/347H01S5/4025
    • A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.
    • 半导体激光器包括包含至少一个II-VI半导体材料的有源层的多层半导体激光异质结构,并被一个或多个铟镓氮(InGaN)二极管激光器光泵浦。 II-VI族半导体材料中的II族元素是锌,镉,镁,铍,锶和钡。 II-VI族半导体材料中的VI族元素是硫,硒和碲。 在激光器的一个实例中,边缘发射异质结构包括两个硒化锌镉活性层,两个磺酸锌镁纳米波导层和两个包层,也是锌硫酸镁镁。 选择包层材料和波导层材料中的元素的比例使得波导层材料具有比波导层的材料更高的带隙。 在另一个示例中,布置了InGaN二极管激光器的二维阵列以光学泵浦II-VI边缘发射异质结构激光器的一维阵列。