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1. 发明申请

WO2003058348A1 PROCESS FOR PRODUCING AN IMAGE USING A FIRST MINIMUM BOTTOM ANTIREFLECTIVE COATING COMPOSITION 审中-公开
标题翻译：使用第一最低底部抗反射涂层组合物生产图像的方法
公开(公告)号：WO2003058348A1
公开(公告)日：2003-07-17
申请号：PCT/EP2003/000023
申请日：2003-01-03
申请人： CLARIANT INTERNATIONAL LTD , CLARIANT FINANCE (BVI) LIMITED
发明人： NEISSER, Mark, O. , OBERLANDER, Joseph, E. , TOUKHY, Medhat, A. , SAKAMURI, Raj
IPC分类号： G03F7/09
CPC分类号： G03F7/091 , G03F7/095 , Y10S430/151
摘要： Disclosed is a process for forming an image on a substrate, comprising the steps of: (a) coating on the substrate a first layer of a radiation sensitive, antireflective composition; (b) coating a second layer of a photoresist composition onto the first layer of the antireflective composition; (c) selectively exposing the coated substrate from step (b) to actinic radiation; and (d) developing the exposed coated substrate from step (c) to form an image; wherein both the photoresist composition and the antireflective composition are exposed in step (c); both are developed in step (d) using a single developer; wherein the antireflective composition of step (a) is a first minimum bottom antireflective coating (B.A.R.C.) composition, having a solids content of up to about 8% solids, and a maximum coating thickness of the coated substrate of [] wherein λ, is the wavelength of the actinic radiation of step (c) and n is the refractive index of the B.A.R.C. composition.
摘要翻译：公开了一种在衬底上形成图像的方法，包括以下步骤：在衬底上涂覆辐射敏感的抗反射组合物b的第一层，将第二层光致抗蚀剂组合物涂覆在抗反射组合物c的第一层上从步骤b选择性地将涂覆的基材暴露于光化辐射并且从步骤c开发暴露的涂覆的基材以形成图像，其中在步骤c中曝光光致抗蚀剂组合物和抗反射组合物都在步骤d中使用单一显影剂显影，步骤a的抗反射组合物是第一最小底部抗反射涂层BARC 组合物，具有高达约8％固体的固体含量和涂覆的基底的最大涂层厚度[]，其中lambd是步骤c和n的光化辐射的波长，是B.A.R.C的折射率。组成。

2. 发明申请

WO2002093263A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY 审中-公开
标题翻译：用于深层超紫外光刻的光电组合物
公开(公告)号：WO2002093263A1
公开(公告)日：2002-11-21
申请号：PCT/EP2002/004558
申请日：2002-04-25
申请人： CLARIANT INTERNATIONAL LTD , CLARIANT FINANCE (BVI) LIMITED
发明人： DAMMEL, Ralph, R. , SAKAMURI, Raj
IPC分类号： G03F7/039
CPC分类号： G03F7/0382 , G03F7/0395 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region and a method of processing the novel photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.
摘要翻译：本发明涉及在深紫外区域敏感的新型光致抗蚀剂组合物和加工新型光刻胶的方法，其中光致抗蚀剂包含新型共聚物，光活性组分和溶剂。新型共聚物包含衍生自含有至少一个氰基官能团的烯键式不饱和化合物的单元和衍生自不饱和环非芳族化合物的单元。

3. 发明申请

WO2002092651A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS 审中-公开
标题翻译：聚合物适用于光电组合物
公开(公告)号：WO2002092651A1
公开(公告)日：2002-11-21
申请号：PCT/EP2002/004557
申请日：2002-04-25
申请人： CLARIANT INTERNATIONAL LTD , CLARIANT FINANCE (BVI) LIMITED
发明人： DAMMEL, Ralph, R. , SAKAMURI, Raj
IPC分类号： C08F222/30
CPC分类号： G03F7/0395 , C08F222/32 , C08F232/08 , G03F7/0046 , G03F7/0382
摘要： The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.
摘要翻译：本发明涉及包含至少一种衍生自含有至少一个氰基官能团和至少一个非芳族环单元的烯属不饱和化合物的单元的新型聚合物。当用于在深紫外区域敏感的光致抗蚀剂组合物中时，该新型聚合物特别有用。

4. 发明申请

WO2004074928A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY 审中-公开
标题翻译：用于深层超紫外光刻的光电组合物
公开(公告)号：WO2004074928A2
公开(公告)日：2004-09-02
申请号：PCT/EP2004/001194
申请日：2004-02-10
申请人： CLARIANT INTERNATIONAL LTD
发明人： DAMMEL, Ralph, R. , SAKAMURI, Raj , HOULIHAN, Francis, M.
IPC分类号： G03F
CPC分类号： G03F7/0395 , G03F7/0046
摘要： The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure (1). The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.
摘要翻译：本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含结构（1）所述的至少一个单元的聚合物。本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法以及在有机碱存在下制备聚合物的方法。

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