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1. 发明申请

WO2006051993A3 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：无定形氧化物和场效应晶体管
公开(公告)号：WO2006051993A3
公开(公告)日：2006-09-14
申请号：PCT/JP2005020980
申请日：2005-11-09
申请人： CANON KK , TOKYO INST TECH , SANO MASAFUMI , NAKAGAWA KATSUMI , HOSONO HIDEO , KAMIYA TOSHIO , NOMURA KENJI
发明人： SANO MASAFUMI , NAKAGAWA KATSUMI , HOSONO HIDEO , KAMIYA TOSHIO , NOMURA KENJI
IPC分类号： H01L29/786 , H01L21/363 , H01L21/428
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
摘要翻译：提供了例如可应用于TFT的有源层的新型无定形氧化物。无定形氧化物包含微晶。

2. 发明申请

WO2009136645A2 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2009136645A2
公开(公告)日：2009-11-12
申请号：PCT/JP2009058724
申请日：2009-04-28
申请人： CANON KK , SATO AYUMU , HAYASHI RYO , YABUTA HISATO , SANO MASAFUMI
发明人： SATO AYUMU , HAYASHI RYO , YABUTA HISATO , SANO MASAFUMI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78621
摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.
摘要翻译：提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

3. 发明申请

WO2008069286A3 DISPLAY APPARATUS USING OXIDE SEMICONDUCTOR AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：使用氧化物半导体的显示装置及其生产方法
公开(公告)号：WO2008069286A3
公开(公告)日：2008-08-07
申请号：PCT/JP2007073619
申请日：2007-11-30
申请人： CANON KK , SANO MASAFUMI , TAKAHASHI KENJI
发明人： SANO MASAFUMI , TAKAHASHI KENJI
IPC分类号： H01L27/32 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/3244
摘要： There are provided a display apparatus which can be stably driven for a long period of time and can display an image with high definition and less image defect, and a production method thereof. The display apparatus includes a light-emitting layer, a pair of electrodes sandwiching the light-emitting layer, a transistor with an active layer for driving the light-emitting layer through the pair of the electrodes, and a matrix wiring portion having a scanning electrode line, a signal electrode line, and a first insulating layer, wherein the active layer includes an oxide which contains In and Zn and at least a part of which is amorphous, and wherein a second insulating layer containing hydrogen in an amount of less than 3 x 10 21 atoms/cm3 is disposed between the active layer and the first insulating layer.
摘要翻译：提供了能够长时间稳定地驱动并且可以显示高分辨率和较少图像缺陷的图像的显示装置及其制造方法。显示装置包括发光层，夹着发光层的一对电极，具有用于通过一对电极驱动发光层的有源层的晶体管，以及具有扫描电极的矩阵布线部线，信号电极线和第一绝缘层，其中所述有源层包括含有In和Zn的氧化物，并且其至少一部分是无定形的，并且其中含有小于3的氢的第二绝缘层 x 10 21原子/ cm 3设置在有源层和第一绝缘层之间。

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