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1. 发明申请

WO2012063752A1 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：WO2012063752A1
公开(公告)日：2012-05-18
申请号：PCT/JP2011075528
申请日：2011-10-31
申请人： CANON KK , ABE KATSUMI , KUMOMI HIDEYA , HAYASHI RYO , IWASAKI TATSUYA
发明人： ABE KATSUMI , KUMOMI HIDEYA , HAYASHI RYO , IWASAKI TATSUYA
IPC分类号： H01L27/07 , H01L27/06 , H01L27/118 , H01L29/786 , H03K19/00
CPC分类号： H01L29/7869 , G05F3/02 , H01L27/0705 , H01L27/11807 , H01L27/1203 , H03K17/063 , H03K17/693 , H03K19/20
摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.
摘要翻译：提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

2. 发明申请

WO2007119321A3 LIGHT-EMITTING DEVICE USING OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND IMAGE DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：使用氧化物半导体薄膜晶体管和图像显示装置的发光装置
公开(公告)号：WO2007119321A3
公开(公告)日：2008-02-21
申请号：PCT/JP2007054601
申请日：2007-03-02
申请人： CANON KK , HAYASHI RYO , IWASAKI TATSUYA
发明人： HAYASHI RYO , IWASAKI TATSUYA
IPC分类号： H01L27/32 , H01L21/336 , H01L29/786 , H01L51/50 , H05B33/02 , H05B33/28
CPC分类号： H01L27/3244 , H01L27/3211 , H01L27/326 , H01L29/7869 , H01L2251/5323
摘要： The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.
摘要翻译：本发明提供一种发光装置，包括：设置在基板上并包括蓝色像素区域，绿色像素区域和红色像素区域的像素区域，其对应于蓝色，绿色和红色三原色的光分别包括：具有源电极，漏电极，栅极电极，栅极绝缘膜和有源层的薄膜晶体管的像素区域; 发光层; 以及用于将发光层夹在其间的下电极和对电极，其中所述有源层包括氧化物; 漏电极与发光层的一部分电连接; 并且薄膜晶体管布置在基板上的除了蓝色像素区域之外的区域中。

3. 发明申请

WO2009136645A2 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2009136645A2
公开(公告)日：2009-11-12
申请号：PCT/JP2009058724
申请日：2009-04-28
申请人： CANON KK , SATO AYUMU , HAYASHI RYO , YABUTA HISATO , SANO MASAFUMI
发明人： SATO AYUMU , HAYASHI RYO , YABUTA HISATO , SANO MASAFUMI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78621
摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.
摘要翻译：提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

4. 发明申请

WO2009041713A3 METHOD FOR MANUFACTURING AN OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：制造氧化物半导体场效应晶体管的方法
公开(公告)号：WO2009041713A3
公开(公告)日：2009-07-09
申请号：PCT/JP2008067877
申请日：2008-09-25
申请人： CANON KK , HAYASHI RYO , YABUTA HISATO , TATEISHI YOSHINORI , KAJI NOBUYUKI
发明人： HAYASHI RYO , YABUTA HISATO , TATEISHI YOSHINORI , KAJI NOBUYUKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78618 , H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.
摘要翻译：提供一种用于制造场效应晶体管的方法。场效应晶体管在基板上包括源电极，漏电极，氧化物半导体层，绝缘层和栅电极。该方法包括：在氧化物半导体层上形成绝缘层之后，通过在含有水分的气氛中进行退火来提高氧化物半导体层的导电性的退火步骤。退火步骤中的蒸汽压力高于退火温度下大气中的饱和蒸气压。

5. 发明申请

WO2011156674A3 THIOETHER PRODRUG COMPOSITIONS AS ANTI-HIV AND ANTI-RETROVIRAL AGENTS 审中-公开
标题翻译：作为抗HIV和抗逆转录病毒剂的抗生素组合物
公开(公告)号：WO2011156674A3
公开(公告)日：2012-05-18
申请号：PCT/US2011039909
申请日：2011-06-10
申请人： US HEALTH , APPELLA DANIEL , APPELLA ETTORE , INMAN JOHN K , MILLER JENKINS LISA M , HAYASHI RYO , WANG DEYUN
发明人： APPELLA DANIEL , APPELLA ETTORE , INMAN JOHN K , MILLER JENKINS LISA M , HAYASHI RYO , WANG DEYUN
IPC分类号： C07C323/62 , A61K31/167 , A61P31/18
CPC分类号： C07C323/63 , C07C323/62 , C07D307/72 , C07D307/73 , C07F9/12 , C07F9/145 , C07F9/6571 , C07F9/65744
摘要： Disclosed are inhibitors of retroviral growth of formula (I), that are useful in treatment of retroviral infections such as HIV. Also disclosed are a composition comprising a pharmaceutically acceptable carrier and at least one compound or salt of the invention, a method for inactivating a virus, a method for dissociating a metal ion from a zinc finger-containing protein, and a method for inhibiting the transmission of a virus.
摘要翻译：公开了式（I）的逆转录病毒生长抑制剂，其可用于治疗逆转录病毒感染如HIV。还公开了包含药学上可接受的载体和本发明的至少一种化合物或盐的组合物，用于灭活病毒的方法，用于从含锌指蛋白质的蛋白质解离金属离子的方法以及用于抑制传播的方法的病毒。

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