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    • 1. 发明申请
    • FREQUENCY TUNABLE OSCILLATOR
    • 频率调节振荡器
    • WO2006104233A1
    • 2006-10-05
    • PCT/JP2006/306992
    • 2006-03-27
    • CANON KABUSHIKI KAISHASEKIGUCHI, RyotaOUCHI, Toshihiko
    • SEKIGUCHI, RyotaOUCHI, Toshihiko
    • H03B7/14
    • H03B5/1847H01P7/088H03B7/143H03B2200/0022
    • There is provided a frequency tunable oscillator that has less degradation of oscillation characteristics due to a parasitic reactance component or the like without mounting therein a lumped constant element such as a variable capacitance element. The frequency tunable oscillator includes a negative resistance element and a resonator which together form a feedback circuit. The frequency tunable oscillator further includes in at least a part of the feedback circuit, a distributed constant material so configured as to have a distributed constant such that an electrical length in the resonator is modulated, and a modification means for externally modifying the distributed constant material, wherein the oscillation frequency can be varied through the external modification by the modification means.
    • 提供了一种频率可调振荡器,由于寄生电抗分量等而具有较少的振荡特性劣化,而不会在其中安装诸如可变电容元件的集总常数元件。 频率可调谐振荡器包括一个形成反馈电路的负电阻元件和谐振器。 频率可调谐振荡器还包括在反馈电路的至少一部分中,分布常数材料被配置为具有分布常数,使得谐振器中的电长度被调制,以及用于外部修改分布常数材料的修改装置 ,其中可以通过修改装置的外部修改来改变振荡频率。
    • 2. 发明申请
    • ELECTRICALLY TUNABLE TERAHERTZ LASER OSCILLATION DEVICE
    • 电动可调TERAHERTZ激光振荡装置
    • WO2008075795A1
    • 2008-06-26
    • PCT/JP2007/075234
    • 2007-12-20
    • CANON KABUSHIKI KAISHASEKIGUCHI, RyotaOUCHI, Toshihiko
    • SEKIGUCHI, RyotaOUCHI, Toshihiko
    • H01S1/02H01S5/0625H01S5/34H01S5/227H01S5/30
    • H01S1/02B82Y20/00H01S5/06255H01S5/06256H01S5/2213H01S5/227H01S5/3027H01S5/3031H01S5/3402H01S5/3422
    • To provide an oscillation device having a long oscillation wavelength (THz) in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium (103) having a gain with respect to an electromagnetic wave to be oscillated, cavity structures (104, 105) for resonating the electromagnetic wave, and energy injection means (121, 122A) and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium (102, 112) and a second magnetic permittivity medium (101, 111) each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means (122B) is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.
    • 为了提供具有波长可变宽度相对较宽且波长扫描速率相对较高的长振荡波长(THz)的振荡装置。 本发明公开了一种振荡装置,包括:相对于要振荡的电磁波具有增益的增益介质(103),用于谐振电磁波的腔结构(104,105),以及能量注入装置(121,122A),并用于注入泵浦能量 进入增益介质。 增益介质夹在第一负介电常数介质(102,112)和第二介电常数介质(101,111)之间,每个介质的介电常数相对于电磁波的实部为负值。 为第一负介电常数介质和第二负介电常数介质中的至少一个提供电场施加装置(122B)以施加用于改变在与增益介质的边界部分处形成的耗尽区的电场。
    • 6. 发明申请
    • DIODE ELEMENT AND DETECTING DEVICE
    • 二极体元件和检测器件
    • WO2013008687A1
    • 2013-01-17
    • PCT/JP2012/067020
    • 2012-06-27
    • CANON KABUSHIKI KAISHASEKIGUCHI, RyotaKOTO, Makoto
    • SEKIGUCHI, RyotaKOTO, Makoto
    • H01L31/108H01L31/0224H01L29/872H01L29/06
    • H01L29/872H01L27/14H01L27/14612H01L27/14643H01L29/0619H01L29/456H01L31/022408H01L31/108
    • Provided is a diode element, a detecting device, and the like which solve problems of a conventional lateral diode element. In the conventional element, a semiconductor interface appears in current path between two electrodes on a surface thereof, and thus noise caused by the interface is large. The diode element includes: a first-conductive-type low carrier concentration layer (103); a first-conductive-type high carrier concentration layer (102); and a Schottky electrode (104) and an ohmic electrode (105) which are formed on a semiconductor surface. The low carrier layer (103) has a carrier concentration that is lower than that of the high carrier layer (102). The diode element includes a first-conductive-type impurity introducing region (106) formed below the ohmic electrode (105), and includes a second-conductive-type impurity introducing region (107) so as not to be in electrical contact with the Schottky electrode (104) on the semiconductor surface between the Schottky electrode (104) and the ohmic electrode (105). The second-conductive-type region (107) is in contact with the first-conductive-type region (106).
    • 提供了解决常规横向二极管元件的问题的二极管元件,检测装置等。 在常规元件中,半导体界面出现在其表面上的两个电极之间的电流路径中,因此由界面引起的噪声大。 二极管元件包括:第一导电型低载流子浓度层(103); 第一导电型高载流子浓度层(102); 以及形成在半导体表面上的肖特基电极(104)和欧姆电极(105)。 低载体层(103)的载流子浓度低于高载流子层(102)的载流子浓度。 二极管元件包括形成在欧姆电极(105)下方的第一导电型杂质引入区(106),并且包括第二导电型杂质导入区(107),以便不与肖特基 在肖特基电极(104)和欧姆电极(105)之间的半导体表面上的电极(104)。 第二导电型区域(107)与第一导电型区域(106)接触。
    • 8. 发明申请
    • OSCILLATOR HAVING NEGATIVE DIFFERENTIAL RESISTANCE DEVICE FOR GENERATING ELECTROMAGNETIC WAVE
    • 具有产生电磁波的负极差分电阻的振荡器
    • WO2011027913A1
    • 2011-03-10
    • PCT/JP2010/065574
    • 2010-09-03
    • CANON KABUSHIKI KAISHASEKIGUCHI, RyotaITSUJI, Takeaki
    • SEKIGUCHI, RyotaITSUJI, Takeaki
    • H03B7/08H03B7/14
    • H03B7/14H03B7/08
    • An oscillator having a negative resistance device and a resonator includes: a transmission line connected to the negative resistance device, a three-terminal device including a first terminal connected to the signal line side of the transmission line at a terminal part, a second terminal connected to the grounding line side of the transmission line and a third terminal receiving a control signal applied thereto; a first regulation unit for regulating the control signal to be applied to the third terminal; and a second regulation unit for regulating the voltage to be applied to the second terminal, the first and the second regulation unit being adapted to regulate respectively the control signal and the voltage so as to make the characteristic impedance of the transmission line and the impedance between the first and the second terminal show an impedance matching. The power consumption rate of the stabilizing circuit can be reduced.
    • 具有负电阻器件和谐振器的振荡器包括:连接到负电阻器件的传输线,三端器件,包括连接到端子部分的传输线的信号线侧的第一端子,第二端子连接 到所述传输线的接地线侧,以及接收施加到其的控制信号的第三终端; 第一调节单元,用于调节要施加到第三端子的控制信号; 以及第二调节单元,用于调节施加到所述第二端子的电压,所述第一调节单元和所述第二调节单元分别适应于调节所述控制信号和所述电压,以使所述传输线的特性阻抗和所述传输线之间的阻抗 第一和第二端子显示阻抗匹配。 可以降低稳定电路的功率消耗率。
    • 9. 发明申请
    • RECTIFIER
    • 整流器
    • WO2010016445A1
    • 2010-02-11
    • PCT/JP2009/063705
    • 2009-07-27
    • CANON KABUSHIKI KAISHASEKIGUCHI, Ryota
    • SEKIGUCHI, Ryota
    • H01L31/0224H01L31/0304H01L31/108G01N21/35H01L29/861H01L29/872
    • H01L31/022408H01L27/0727H01L29/47H01L31/0304H01L31/1085H01L31/11Y02E10/544
    • Provided is a rectifier such as a detector in which a cutoff frequency may be increased in a view point different from the reduction in size of the structure. The rectifier includes: a Schottky barrier portion (101) including a Schottky electrode; (111) a barrier portion (102) having a rectifying property with respect to a majority carrier in the Schottky barrier portion; and an ohmic electrode (103) in electrical contact with the barrier portion having the rectifying property, in which each of the Schottky barrier portion and the barrier portion.having the. rectifying property has an asymmetrical band profile whose gradient on one side is larger than a gradient of another side, and the Schottky barrier portion and the barrier portion having the rectifying property are connected to each other so that the steep gradient side of the band profile is located on a side of the Schottky electrode.
    • 提供了诸如检测器的整流器,其中在与结构的尺寸的减小不同的视点中可以增加截止频率。 整流器包括:包括肖特基电极的肖特基势垒部分(101) (111)在所述肖特基势垒部分中具有相对于多数载流子的整流特性的阻挡部分(102); 和与具有整流性能的阻挡部分电接触的欧姆电极(103),其中每个肖特基势垒部分和阻挡部分都具有整流性能。 整流性具有一侧的梯度大于另一侧的倾斜度的非对称带轮廓,并且具有整流性的肖特基势垒部分和势垒部分彼此连接,使得带轮廓的陡峭梯度侧为 位于肖特基电极的一侧。