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1. 发明申请

WO2010035035A3 MICROTUBE ARRAYS 审中-公开
标题翻译：麦克风阵列
公开(公告)号：WO2010035035A3
公开(公告)日：2010-08-26
申请号：PCT/GB2009051246
申请日：2009-09-24
申请人： CAMBRIDGE ENTPR LTD , SCOTT JAMES FLOYD , FAN HONGJIN
发明人： SCOTT JAMES FLOYD , FAN HONGJIN
IPC分类号： B81B7/04
CPC分类号： B81B7/04 , A61B5/0059 , B41J2/1429 , B81B2201/052 , B81B2201/06 , G01J3/10 , G01J3/42 , G01N21/3581
摘要： An array of microtubes upwardly extending from a supporting base of substrate material is provided, in which the tubes comprise at least one concentric layer comprising a metallic oxide and at least one concentric layer comprising a piezoelectric and/or ferroelectric material. The array is made by lining the walls of pores in the substrate material sequentially with metallic oxide and piezoelectric and/or ferroelectric material and then removing part but not all of the substrate material. The arrays may be used in a variety of applications including liquid delivery and as microelectronic components. A method of generating terahertz emission is also provided.
摘要翻译：提供从衬底材料的支撑基底向上延伸的微管阵列，其中管包括包含金属氧化物的至少一个同心层和包括压电和/或铁电材料的至少一个同心层。该阵列通过依次用金属氧化物和压电和/或铁电材料衬在基底材料中的孔壁，然后除去部分而不是全部基底材料制成。阵列可以用于各种应用，包括液体输送和微电子部件。还提供了一种产生太赫兹发射的方法。

2. 发明申请

WO2009066100A3 MAGNETOELECTRIC SENSORS 审中-公开
标题翻译：磁电传感器
公开(公告)号：WO2009066100A3
公开(公告)日：2009-12-17
申请号：PCT/GB2008051081
申请日：2008-11-18
申请人： CAMBRIDGE ENTPR LTD , ISRAEL EMIL CASEY , MATHUR NEIL DAVID , MATTHEWS ANDREW PETER , SCOTT JAMES FLOYD
发明人： ISRAEL EMIL CASEY , MATHUR NEIL DAVID , MATTHEWS ANDREW PETER , SCOTT JAMES FLOYD
IPC分类号： G01R33/02 , G01R33/09 , H01G4/00 , H01G4/38 , H01H36/00 , H03K17/972
CPC分类号： H03K17/97 , B82Y25/00 , G01R33/093 , H01G4/1227 , H01G4/30 , H01G5/16
摘要： This invention relates to magnetoelectric sensors and sensing methods. A magnetoelectric sensor, the sensor comprising: first and second electrical connections; a plurality of layers of magnetostrictive metal, a first set of said layers of said magnetostrictive metal being connected to said first electrode connection and a second set of said layers of said magnetostrictive metal being connected to said second electrode connection, said first and second sets of layers of magnetostrictive metal being interdigitated; and a plurality of layers of piezoelectric material between said layers of magnetostrictive material; wherein a said layer of piezoelectric material and layers of said magnetostrictive metal to either side of the said layer of piezoelectric material define a magnetoelectric sensing element; and wherein a plurality of said magnetoelectric sensing elements are connected electrically in parallel such that a change in magnetic field is able to cause a current to flow generated by said plurality of said layers of piezoelectric material.
摘要翻译：本发明涉及磁电传感器和感测方法。一种磁电传感器，该传感器包括：第一和第二电连接; 多个磁致伸缩金属层，所述磁致伸缩金属的第一组所述层连接到所述第一电极连接，并且所述磁致伸缩金属的第二层连接到所述第二电极连接，所述第一和第二组磁致伸缩金属层被交叉指向; 以及在所述磁致伸缩材料层之间的多层压电材料; 其中所述压电材料层和所述磁致伸缩金属层到所述压电材料层的任一侧限定磁电传感元件; 并且其中多个所述磁电检测元件电并联连接，使得磁场的变化能够引起由所述多个所述压电材料层产生的电流流动。

3. 发明申请

WO2004070089A3 DEPOSITION OF LAYERS ON SUBSTRATES 审中-公开
标题翻译：在基板上沉积层
公开(公告)号：WO2004070089A3
公开(公告)日：2005-01-20
申请号：PCT/GB2004000454
申请日：2004-02-05
申请人： UNIV CAMBRIDGE TECH , SAMCO INTERNAT INC , MORRISON FINLAY DOOGAN , SCOTT JAMES FLOYD
发明人： MORRISON FINLAY DOOGAN , SCOTT JAMES FLOYD
IPC分类号： C30B7/00 , C30B33/00 , C30B29/60 , G02F1/09
CPC分类号： C30B7/00 , C30B29/30 , C30B29/60 , C30B33/00 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997
摘要： According to the invention we provide a process for filling or lining the pores of a porous silicon, silica or alumina substrate with a material which exhibits voltage-dependent index of refraction n comprising providing precursors for the deposited material as a precursor solution, forming a fine mist of droplets of precursor solution and applying the droplets to the porous substrate. The invention provides for the first time porous silicon, silica and alumina substrates having fill fraction at least 60%. Fill fractions of close to 100% can be achieved. When provided with top and bottom electrodes, filled porous silicon, silica and alumina wafers can be used as voltage-dependent photonic devices. The same process can be used for lining trenches in the surface of a silicon substrate, for instance for use in production of microelectronic devices such as random access memories.
摘要翻译：根据本发明，我们提供一种用多孔硅，二氧化硅或氧化铝衬底的孔填充或衬里的方法，该材料表现出电压依赖折射率n，包括提供沉积材料的前体作为前体溶液，形成细前体溶液液滴雾化并将液滴施加到多孔基材上。本发明首次提供具有至少60％的填充部分的多孔硅，二氧化硅和氧化铝基底。可以实现接近100％的填充分数。当设置有顶部和底部电极时，填充的多孔硅，二氧化硅和氧化铝晶片可以用作依赖于电压的光子器件。相同的工艺可以用于在硅衬底的表面中衬衬沟槽，例如用于生产诸如随机存取存储器的微电子器件。

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