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1. 发明申请

WO1994018688A1 MICROMACHINED RELAY AND METHOD OF FORMING THE RELAY 审中-公开
标题翻译：微型继电器和形成继电器的方法
公开(公告)号：WO1994018688A1
公开(公告)日：1994-08-18
申请号：PCT/US1994001091
申请日：1994-01-31
申请人： BROOKTREE CORPORATION
发明人： BROOKTREE CORPORATION , CHRISTOPHER, James, D. , KATZENSTEIN, Henry, S.
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H1/20 , H01H2001/0084 , H01H2059/0018 , Y10T307/878
摘要： A bridging member (18) extending across a cavity (16) in a semiconductor substrate (12) (e.g. polycrystalline silicon) has successive layers - a masking layer (20), an electrically conductive layer (22) (e.g. polysilicon) and an insulating layer (24) (e.g. SiO2). A first electrical contact (32) (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging members across the cavity. A pair of bumps (34) (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends. Initially the bridging member (18) and then the contact (32) and the bumps (34) are formed on the substrate and then the cavity (16) is etched in the substrate through holes in the bridging member. A pair of second electrical contacts (44) (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (14) (e.g. pyrex glass) adjacent the semiconductor substrate. The two substrates are bonded after the contacts are cleaned. The first contact (32) is normally separated from the second contacts (44) because the bumps (34) engage the insulating substrate surface. When a voltage is applied between an electrically conductive layer on the insulating substrate surface and the polysilicon layer, the bridging member (18) is deflected so that the first contact (33) engages the second contacts (44). Electrical leads extend on the surface of the insulating substrate from the second contacts to bonding pads disposed adjacent a second cavity in the semiconductor substrate. The resultant relays on a wafer may be separated by sawing the semiconductor and insulating substrates at the position of the second cavity in each relay to expose the pads for electrical connections.
摘要翻译：延伸穿过半导体衬底（12）（例如多晶硅）中的空腔（16）的桥接构件（18）具有连续的层 - 掩模层（20），导电层（22）（例如多晶硅）和绝缘层层（24）（例如SiO 2）。第一电接触件（32）（例如镀有钌的金）在绝缘层上沿垂直于跨越空腔的桥接构件的延伸方向延伸。一对凸块（例如金）位于绝缘层上，每一个在接触件和一个空腔端部之间。首先，在基板上形成桥接构件（18），然后形成接触件（32）和凸起（34），然后通过桥接构件中的孔在基板中蚀刻空腔（16）。在与半导体衬底相邻的绝缘衬底（14）（例如发泡玻璃）的表面上，一对第二电触头（44）（例如镀有钌的金）。触点清洁后，两个基板接合。由于凸起（34）接合绝缘基板表面，所以第一触点（32）通常与第二触点（44）分离。当在绝缘衬底表面上的导电层和多晶硅层之间施加电压时，桥接构件（18）被偏转，使得第一接触件（33）接合第二接触件（44）。电引线在绝缘基板的表面上从第二触点延伸到邻近半导体衬底中的第二腔的接合焊盘。可以通过在每个继电器中的第二腔的位置处锯切半导体和绝缘基板来分离晶片上的所得继电器，以露出用于电连接的焊盘。

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