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1. 发明申请

WO2013081991A1 TEMPERATURE COMPENSATION METHOD FOR HIGH-DENSITY FLOATING-GATE MEMORY 审中-公开
标题翻译：用于高密度浮动门存储器的温度补偿方法
公开(公告)号：WO2013081991A1
公开(公告)日：2013-06-06
申请号：PCT/US2012/066584
申请日：2012-11-27
申请人： BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY
发明人： CHAKRABARTTY, Shantanu , GU, Ming , HUANG, Chenling
IPC分类号： G11C16/04 , G11C27/00 , G11C27/02
CPC分类号： H01L27/11526 , G11C7/04 , G11C16/0408 , G11C16/0441 , G11C27/005 , G11C27/028 , H01L27/0629 , H01L28/40
摘要： A temperature compensation technique is provided for a non-volatile memory arrangement. The memory arrangement includes: a memory circuit (12) having a floating gate transistor (P3) operating in weak-inversion mode and a varactor (C v ) with a terminal electrically coupled to a gate node of the floating gate transistor; a first current reference circuit (14) having a floating gate transistor (PI); a second current reference circuit (16) having a floating gate transistor (P2); and a control module (18) configured to selectively receive a reference current ( I 1 , l 2 ) from a drain of the floating gate transistor in each of the first and second current reference circuits. The control module operates to determine a ratio between the reference currents received from the first and second current reference circuits, generate a tuning voltage (V x ) in accordance with the ratio between the reference currents and apply the tuning voltage to the varactor in the memory circuit.
摘要翻译：为非易失性存储器装置提供温度补偿技术。存储器装置包括：具有以弱反相模式工作的浮栅晶体管（P3）的存储器电路（12）和与浮栅晶体管的栅极节点电耦合的端子的变容二极管（Cv）; 具有浮置栅极晶体管（PI）的第一电流参考电路（14）; 具有浮置栅极晶体管（P2）的第二电流参考电路（16）; 以及控制模块（18），被配置为从所述第一和第二电流参考电路中的每一个中的所述浮动栅极晶体管的漏极选择性地接收参考电流（I1，I2）。控制模块操作以确定从第一和第二电流参考电路接收的参考电流之间的比率，根据参考电流之间的比率产生调谐电压（Vx），并将调谐电压施加到存储器电路中的变容二极管。

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