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    • 2. 发明申请
    • MODULAR POWERLINE ADAPTERS AND METHODS OF USE
    • 模块化电源适配器及其使用方法
    • WO2009058791A1
    • 2009-05-07
    • PCT/US2008/081480
    • 2008-10-28
    • BELKIN INTERNATIONAL, INC.KIM, John
    • KIM, John
    • H04L27/00
    • H01R31/065H01R13/6273H01R31/005H01R2201/04H04B3/56H04B2203/5454H04B2203/5483
    • Embodiments of modular powerline adapters and their methods of use are generally described herein. An article to transmit and receive signals through an electrical power distribution network comprises: a first module and a second module, wherein the first module comprises an electrical plug to electrically couple to an electrical power outlet receptacle of the electrical power distribution network. The first module and second module further comprise signal connectors, and each module further comprises a housing and a plurality of electrical components located within each housing. The plurality of electrical components transmit and/or receive digital information through the electrical power distribution network. The first and second module's housing comprise mechanical attachment mechanisms to rigidly couple one module to another. Other embodiments may be described and claimed.
    • 模块化电力线适配器及其使用方法的实施例一般在此描述。 通过配电网发送和接收信号的物品包括:第一模块和第二模块,其中所述第一模块包括电气插头以电耦合到所述配电网络的电力插座。 第一模块和第二模块还包括信号连接器,并且每个模块还包括壳体和位于每个壳体内的多个电气部件。 多个电气部件通过电力分配网络发送和/或接收数字信息。 第一和第二模块的壳体包括将一个模块刚性地耦合到另一个模块的机械附接机构。 可以描述和要求保护其他实施例。
    • 7. 发明申请
    • TECHNIQUES FOR FORMING A CONTACT TO A BURIED DIFFUSION LAYER IN A SEMICONDUCTOR MEMORY DEVICE
    • 在半导体存储器件中形成接触扩散层的技术
    • WO2010102106A2
    • 2010-09-10
    • PCT/US2010/026209
    • 2010-03-04
    • INNOVATIVE SILICON ISI SAELLIS, WayneKIM, John
    • ELLIS, WayneKIM, John
    • H01L27/06
    • H01L27/1052H01L27/0207H01L27/108H01L27/10802H01L27/10876H01L27/10885H01L27/10888H01L27/10891H01L29/7841
    • Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device. The semiconductor memory device may comprise a substrate comprising an upper layer. The semiconductor memory device may also comprise an array of dummy pillars formed on the upper layer of the substrate and arranged in rows and columns. Each of the dummy pillars may extend upward from the upper layer and have a bottom contact that is electrically connected with the upper layer of the substrate. The semiconductor memory device may also comprise an array of active pillars formed on the upper layer of the substrate and arranged in rows and columns. Each of the active pillars may extend upward from the upper layer and have an active first region, an active second region, and an active third region. Each of the active pillars may also be electrically connected with the upper layer of the substrate.
    • 公开了用于在半导体存储器件中形成与埋入扩散层的接触的技术。 在一个特定的示例性实施例中,这些技术可以被实现为半导体存储器件。 半导体存储器件可以包括包括上层的衬底。 半导体存储器件还可以包括形成在衬底的上层上并以行和列布置的虚拟柱的阵列。 每个虚拟柱可以从上层向上延伸并且具有与衬底的上层电连接的底部接触。 半导体存储器件还可以包括形成在衬底的上层上并以行和列布置的活性柱的阵列。 每个有源支柱可以从上层向上延伸,并且具有活动的第一区域,活动的第二区域和活动的第三区域。 每个活性柱也可以与衬底的上层电连接。