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    • 3. 发明申请
    • A METHOD FOR CHEMICALLY-MECHANICALLY POLISHING PATTERNED SURFACES COMPOSED OF METALLIC AND NONMETALLIC PATTERNED REGIONS
    • 一种金属和非金属形成区域化学机械抛光图形表面的方法
    • WO2009071351A1
    • 2009-06-11
    • PCT/EP2008/062442
    • 2008-09-18
    • BASF SECLARKSON UNIVERSITYDEVARAPALLI, Vamsi, KrishnaBABU, Suryadevara, V.PARTCH, Richard, E.RAMAN, Vijay, Immanuel
    • DEVARAPALLI, Vamsi, KrishnaBABU, Suryadevara, V.PARTCH, Richard, E.RAMAN, Vijay, Immanuel
    • C09G1/02H01L21/321
    • C09G1/02H01L21/3212
    • A method for chemically-mechanically polishing patterned surfaces composed of patterned metallic and nonmetallic regions comprising the steps of: (1) selecting an aqueous chemical mechanical polishing composition comprising, based on the total amount of the polishing composition, (A) 1 to 10% by weight of an abrasive; (B) 0.1 to 5% by weight an oxidizing agent containing a peroxide group; (C) 0.1 to 5% by weight of an organic acid selected from oxalic acid and polycarboxylic acids comprising aliphatic, cycloaliphatic or aromatic moieties; (D) 0.01 to 3% by weight of a passivating film-forming agent; (E) 0.001 to 2% by weight of a cationic surfactant selected from quaternary ammonium salts; quaternary phosphonium salts; tertiary sulfonium salts pyridinium salts; imidazolinium salts; and oxazolinium salts; and (F) a pH controlling agent to adjust the pH between 4 and 8; (2) applying the selected chemical mechanical polishing composition to the interface between a patterned surface composed of patterned metallic and nonmetallic regions and a polishing pad; and (3) bringing the polishing pad into contact with the patterned surface and moving the pad in relation to the substrate; (4) thereby reducing the surface roughness of the patterned surface to less than 1 nm as measured by optical profilometry; and a process for manufacturing integrated circuits on semiconductor wafers making use of the said method.
    • 一种用于对由图案化金属和非金属区域组成的图案化表面进行化学机械抛光的方法,包括以下步骤:(1)选择水性化学机械抛光组合物,其包含基于抛光组合物的总量,(A)1至10% 的研磨剂; (B)0.1〜5重量%的含有过氧化物基团的氧化剂; (C)0.1至5重量%的选自草酸和包含脂族,脂环族或芳族部分的多元羧酸的有机酸; (D)0.01〜3重量%的钝化成膜剂; (E)0.001-2重量%的选自季铵盐的阳离子表面活性剂; 季鏻盐; 叔锍盐吡啶鎓盐; 咪唑啉盐; 和恶唑啉盐; 和(F)pH调节剂以调节pH在4和8之间; (2)将选择的化学机械抛光组合物施加到由图案化金属和非金属区域构成的图案化表面与抛光垫之间的界面处; 和(3)使抛光垫与图案化表面接触并相对于衬底移动衬垫; (4),从而通过光学轮廓测量法将图案化表面的表面粗糙度降低到小于1nm; 以及利用所述方法制造半导体晶片上的集成电路的工艺。