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1. 发明申请

WO0034552A9 SINGLE CRYSTAL PROCESSING BY IN-SITU SEED INJECTION 审中-公开
标题翻译：单一种子注射的单晶加工
公开(公告)号：WO0034552A9
公开(公告)日：2001-12-13
申请号：PCT/US9924375
申请日：1999-10-19
申请人： BALL SEMICONDUCTOR INC
发明人： VEKRIS EVANGELLOS , PATEL NAINESH J , HANABE MURALI
IPC分类号： C30B11/00 , C30B29/06 , C30B30/08 , C30B29/60
CPC分类号： C30B30/08 , C30B11/00 , C30B29/60 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A system and method for processing crystals is disclosed. The system includes a receiver tube for receiving semiconductor granules. The granules are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, located at one end of the chamber, creates droplets from the molten mass, which then drop through a long drop tube. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ, or the droplets may be melted and a seed injected in-situ. The seed can thereby facilitate crystallization.
摘要翻译：公开了一种用于处理晶体的系统和方法。该系统包括用于接收半导体颗粒的接收管。然后将颗粒引导到限定在外壳内的室。该室保持加热的惰性气氛，以将半导体颗粒熔化成熔融物质。位于腔室一端的喷嘴产生熔融物质的液滴，然后通过一个长液滴管滴下。当液滴移动通过液滴管时，它们形成球形半导体晶体。滴管被加热，球形半导体晶体可以是单晶。位于喷嘴和滴管之间的电感耦合等离子体焰炬熔化液滴，但是原位留下种子，或者液滴可能被熔化，并且原位注入种子。因此种子可以促进结晶。

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