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1. 发明申请

WO2006055346A3 ULTRAVIOLET ASSISTED PORE SEALING OF POROUS LOW K DIELECTRIC FILMS 审中-公开
标题翻译： ULTRAVIOLET辅助密封多孔低K电介质膜
公开(公告)号：WO2006055346A3
公开(公告)日：2007-03-22
申请号：PCT/US2005040463
申请日：2005-11-08
申请人： AXCELIS TECH INC , WALDFRIED CARLO , ESCORCIA ORLANDO , BERRY IVAN
发明人： WALDFRIED CARLO , ESCORCIA ORLANDO , BERRY IVAN
IPC分类号： H01L21/316 , H01L21/3105
CPC分类号： H01L21/76825 , C23C16/56 , H01L21/02107 , H01L21/02203 , H01L21/02337 , H01L21/02348 , H01L21/31051 , H01L21/31058 , H01L21/31695 , H01L21/76826
摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.
摘要翻译：用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外（UV）辐射，其有效地通过碳化，氧化来密封多孔电介质表面，和/或膜致密化。多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

2. 发明申请

WO2012018375A2 PLASMA MEDIATED ASHING PROCESSES 审中-公开
标题翻译：等离子体介质吸附过程
公开(公告)号：WO2012018375A2
公开(公告)日：2012-02-09
申请号：PCT/US2011001325
申请日：2011-07-27
申请人： AXCELIS TECH INC , BERRY IVAN , LUO SHIJIAN , WALDFRIED CARLO , ESCORCIA ORLANDO
发明人： BERRY IVAN , LUO SHIJIAN , WALDFRIED CARLO , ESCORCIA ORLANDO
IPC分类号： G03F7/42
CPC分类号： G03F7/427 , H01J2237/3342
摘要： A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.
摘要翻译：用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

3. 发明申请

WO2010059252A2 FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS 审中-公开
标题翻译：线等离子体介质加热过程的前端和装置
公开(公告)号：WO2010059252A2
公开(公告)日：2010-05-27
申请号：PCT/US2009006270
申请日：2009-11-20
申请人： AXCELIS TECH INC , LUO SHIJIAN , ESCORCIA ORLANDO , WALDFRIED CARLO , BERRY IVAN
发明人： LUO SHIJIAN , ESCORCIA ORLANDO , WALDFRIED CARLO , BERRY IVAN
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/31138 , H01J37/3244 , H01J37/32449
摘要： Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.
摘要翻译：用于从衬底去除有机材料的线（FEOL）等离子体介导灰化工艺的前端通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体的比例活性氮和活性氧大于由包含氧气和氮气的气体混合物的等离子体得到的活性氮和活性氧的比率。等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。还描述了等离子体装置。

4. 发明申请

WO2005017983A3 PLASMA ASHING PROCESS 审中-公开
标题翻译：等离子体加工工艺
公开(公告)号：WO2005017983A3
公开(公告)日：2005-09-15
申请号：PCT/US2004025962
申请日：2004-08-11
申请人： AXCELIS TECH INC , WALDFRIED CARLO , ESCORCIA ORLANDO , HAN QINGYUAN , BUCKLEY THOMAS , SAKTHIVEL PALANIKUMARAN
发明人： WALDFRIED CARLO , ESCORCIA ORLANDO , HAN QINGYUAN , BUCKLEY THOMAS , SAKTHIVEL PALANIKUMARAN
IPC分类号： G03F7/42 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/306
CPC分类号： H01L21/02071 , G03F7/427 , H01J2237/3342 , H01L21/31138
摘要： A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
摘要翻译：用于在半导体衬底存在低k材料的情况下去除光致抗蚀剂的基本上无氧且无氮的等离子体灰化工艺包括通过将等离子体气体组合物暴露于能源形成等离子体来形成活性物质。等离子气体组合物基本不含含氧气体和含氮气体。通过将光致抗蚀剂暴露于基本不含氧和氮的反应性物质，等离子体选择性地从含有低k材料的下层衬底上去除光致抗蚀剂。该工艺可以与含低k介电材料的碳一起使用。

5. 发明申请

WO2012018374A3 PLASMA MEDIATED ASHING PROCESSES 审中-公开
标题翻译：等离子体介质加热过程
公开(公告)号：WO2012018374A3
公开(公告)日：2012-04-26
申请号：PCT/US2011001324
申请日：2011-07-27
申请人： AXCELIS TECH INC , LUO SHIJIAN , ESCORCIA ORLANDO , WALDFRIED CARLO
发明人： LUO SHIJIAN , ESCORCIA ORLANDO , WALDFRIED CARLO
IPC分类号： G03F7/42
CPC分类号： G03F7/427 , H01J2237/3342
摘要： Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.
摘要翻译：用于从衬底去除有机材料的等离子体介导的灰化过程通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含活性氮和活性氧大于从包含氧气和氮气的气体混合物的等离子体可获得的活性氮和活性氧的比率。等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。还描述了等离子体装置。

6. 发明申请

WO2005010971A3 ULTAVIOLET CURING PROCESSES FOR ADVANCED LOW-K MATERIALS 审中-公开
标题翻译：用于高级低K材料的超紫外线固化方法
公开(公告)号：WO2005010971A3
公开(公告)日：2005-04-28
申请号：PCT/US2004017838
申请日：2004-06-07
申请人： AXCELIS TECH INC , WALDFRIED CARLO , HAN QINGYUAN , ESCORCIA ORLANDO , BERRY III IVAN L
发明人： WALDFRIED CARLO , HAN QINGYUAN , ESCORCIA ORLANDO , BERRY III IVAN L
IPC分类号： C23C16/44 , C09D183/02 , C09D183/04 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/316 , B05D3/06 , C04B41/46 , C04B41/50 , C23C16/40 , H01L21/314 , H01L21/324
CPC分类号： C09D183/02 , C09D183/04 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/3121 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50 %. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the LIV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.
摘要翻译：低介电常数材料具有改善的弹性模量和材料硬度。制造这种材料的过程包括提供介电材料和紫外线（UV）固化材料以产生UV固化的介电材料。 UV固化产生具有改善的模量和材料硬度的材料。改进通常大于或大约50％。 UV固化的电介质材料可以任选地进行后UV处理。与LIV固化的介电材料相比，后UV处理降低材料的介电常数，同时保持改进的弹性模量和材料硬度。紫外线固化的电介质可以另外表现出比炉固化过程更低的固化总热量预算。

7. 发明申请

WO2004107414A3 PLASMA APPARATUS, GAS DISTRIBUTION ASSEMBLY FOR A PLASMA APPARATUS AND PROCESSES THEREWITH 审中-公开
标题翻译：等离子体装置，等离子体装置的气体分配装置及其过程
公开(公告)号：WO2004107414A3
公开(公告)日：2005-08-11
申请号：PCT/US2004016076
申请日：2004-05-21
申请人： AXCELIS TECH INC , BECKNELL ALAN , BUCKLEY THOMAS , FERRIS DAVID , PINGREE RICHARD JR , SAKTHIVEL PALANIKUMARAN , SRIVASTAVA ASEEM , WALDFRIED CARLO
发明人： BECKNELL ALAN , BUCKLEY THOMAS , FERRIS DAVID , PINGREE RICHARD JR , SAKTHIVEL PALANIKUMARAN , SRIVASTAVA ASEEM , WALDFRIED CARLO
IPC分类号： H01J37/32
CPC分类号： H01J37/32357 , H01J37/3244 , H01J37/32844 , Y02C20/30
摘要： A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).
摘要翻译：等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

8. 发明申请

WO2004049073A3 DRYING PROCESS FOR LOW-K DIELECTRIC FILMS 审中-公开
标题翻译：低K电介质膜干燥工艺
公开(公告)号：WO2004049073A3
公开(公告)日：2004-11-18
申请号：PCT/US0338019
申请日：2003-11-26
申请人： AXCELIS TECH INC
发明人： WALDFRIED CARLO , HAN QINGYUAN , HALLOCK JOHN , BERRY IVAN , MARGOLIS ARI , ESCORCIA ORLANDO
IPC分类号： G03F7/42 , H01L21/3105 , H01L21/311
CPC分类号： H01L21/31058 , G03F7/42 , H01L21/3105 , H01L21/31111 , H01L21/31116
摘要： A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.
摘要翻译：一种用于从集成电路晶片的低k电介质膜干燥和去除污染物的方法，所述方法包括将低k电介质层暴露于光子; 并且与光子曝光同时，在光子曝光之前或之后，使基板暴露于有效除去污染物而不引起低k电介质层退化的过程，其中该工艺选自加热工艺，真空工艺，无氧等离子体工艺及其组合。

9. 发明申请

WO03010799A2 PLASMA ASHING PROCESS 审中-公开
标题翻译：等离子流程
公开(公告)号：WO03010799A2
公开(公告)日：2003-02-06
申请号：PCT/US0223344
申请日：2002-07-22
申请人： AXCELIS TECH INC
发明人： HAN QINGYUAN , BERRY IVAN , SAKTHIVEL PALANI , WALDFRIED CARLO
IPC分类号： G03F7/42 , H01J37/32 , H01L21/311 , H01L21/00
CPC分类号： H01J37/32357 , G03F7/427 , H01J2237/3342 , H01L21/31138
摘要： A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and /or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.
摘要翻译：用于从半导体衬底选择性地灰化光致抗蚀剂和/或后蚀刻残余物的等离子体灰化处理和装置包括在比处理室压力大至少2乇的压力下在等离子体产生区域中产生还原离子密度等离子体; 并将其上具有光致抗蚀剂和/或后蚀刻残余物的晶片表面暴露于还原离子密度等离子体，以从表面选择性地去除光致抗蚀剂和/或后蚀刻残留物，并使表面基本上与将底物暴露于还原离子密度等离子体。

10. 发明申请

WO0170628A3 PLASMA PROCESSING FOR POROUS SILICA THIN FILM 审中-公开
标题翻译：多孔二氧化硅薄膜的等离子体处理
公开(公告)号：WO0170628A3
公开(公告)日：2002-04-18
申请号：PCT/US0108997
申请日：2001-03-20
申请人： DOW CORNING , AXCELIS TECH INC
发明人： BERRY IVAN LOUIS III , CHUNG KYUHA , HAN QINGYUAN , LIU YOUFAN , MOYER ERIC SCOTT , SPAULDING MICHAEL JOHN , WALDFRIED CARLO , BRIDGEWATER TODD , CHEN WEI
IPC分类号： C01B33/12 , H01L21/312 , H01L21/314 , H01L21/316 , C04B41/50
CPC分类号： H01L21/3122 , C01B33/126 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/31695 , Y10T428/31663
摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si-H groups. The coating can be thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5. Plasma treatment of the thermally cured coating will convert the coating into porous silica. Plasma treatment of the thermally cured porous network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and about 120 seconds at a temperature less than about 350 DEG C. Porous network coatings can also be plasma cured without prior thermal curing. The coating can be plasma cured at a temperature between about 200 DEG C and about 250 DEG C for less than about 5 minutes. The thermally cured plasma treated coating or plasma cured coating can optionally be annealed. Annealing by rapid thermal processing (RTP) of the thermally cured plasma treated or plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus. The annealing temperature is preferably less than about 475 DEG C, and the annealing time is preferably no more than about 180 seconds. The annealed, thermally cured plasma treated or plasma cured coating has a dielectric constant in the range of from about 1.1 to about 3.5 and an improved elastic modulus.
摘要翻译：具有改善的弹性模量的低介电常数膜。制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂制备的多孔网状涂层。涂层可以热固化，并且介电常数在约1.1至约3.5的范围内。热固化涂层的等离子体处理将将涂层转化为多孔二氧化硅。热固化多孔网络涂层的等离子体处理产生具有改进模量但具有较高介电常数的涂层。该涂层在小于约350℃的温度下进行等离子体处理约15至约120秒。多孔网络涂层也可以在没有预先热固化的情况下进行等离子体固化。涂层可以在约200℃至约250℃的温度下等离子体固化少于约5分钟。热固化的等离子体处理的涂层或等离子体固化涂层可以任选地退火。经热固化的等离子体处理或等离子体固化涂层的快速热处理（RTP）退火降低了涂层的介电常数，同时保持了改进的弹性模量。退火温度优选小于约475℃，退火时间优选不大于约180秒。经退火的热固化等离子体处理或等离子体固化涂层的介电常数在约1.1至约3.5的范围内并具有改进的弹性模量。

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