会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • OPTICAL ELEMENT, LITHOGRAPHIC APPARATUS INCORPORATING SUCH AN ELEMENT, METHOD OF MANUFACTURING AN OPTICAL ELEMENT
    • 光学元件,包含这种元件的光刻设备,制造光学元件的方法
    • WO2013113537A3
    • 2013-09-26
    • PCT/EP2013050395
    • 2013-01-10
    • ASML NETHERLANDS BV
    • SINGH HARMEET
    • G03F7/20G02B5/18G02B5/20G21K1/04
    • G03F7/70575B82Y10/00G02B5/1838G02B5/203G02B5/208G03F7/70191G03F7/702G21K1/062G21K1/067G21K2201/064
    • A spectral purity filter is integrated with a collector optic (CO) in an EUV lithography apparatus. The element is coated on at least one surface (410) with a multilayer stack comprising a plurality of alternating material layers (for example Mo, Si) suitable for reflecting radiation of EUV wavelength. To manufacture the element, a substrate (402) is provided with a three-dimensional profile (410a, 412, 410b) on a scale much larger than the wavelength of EUV radiation. The multilayer stack is then applied as a series conformal coatings formed by atomic layer deposition on the substrate after formation of said profile. The profile, as reproduced in the MLM coating (310a, 312, 310b), forms a spectral purity filter. Unwanted radiation such as infrared radiation will be scattered or diffracted so that a reduced portion is reflected in the same direction as the reflected EUV radiation. The profile may be designed to form a phase grating, or a scattering texture.
    • 光谱纯度滤光片与EUV光刻设备中的收集器光学器件(CO)集成。 该元件用至少一个表面(410)涂覆有多层叠层,该叠层包括适于反射EUV波长的辐射的多个交替材料层(例如Mo,Si)。 为了制造元件,衬底(402)设置有比EUV辐射的波长远大得多的三维轮廓(410a,412,410b)。 然后在形成所述轮廓之后,将多层叠层施加为通过原子层沉积形成在衬底上的串联保形涂层。 如在MLM涂层(310a,312,310b)中再现的轮廓形成光谱纯度滤光片。 诸如红外辐射之类的不需要的辐射将被散射或衍射,使得减少的部分以与反射的EUV辐射相同的方向被反射。 该轮廓可以被设计成形成相位光栅或散射纹理。