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1. 发明申请

WO2023001479A1 ALIGNING A DISTORTED IMAGE 审中-公开
公开(公告)号：WO2023001479A1
公开(公告)日：2023-01-26
申请号：PCT/EP2022/067094
申请日：2022-06-23
申请人： ASML NETHERLANDS B.V.
发明人： PISARENCO, Maxim , MIDDLEBROOKS, Scott, Anderson , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , VERSCHUREN, Coen, Adrianus
IPC分类号： G06T11/00 , G06T5/00
摘要： Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method for generating synthetic distorted images, the method comprising: obtaining an input set that comprises a plurality of distorted images; determining, using a model, distortion modes of the distorted images in the input set; generating a plurality of different combinations of the distortion modes; generating, for each one of the plurality of combinations of the distortion modes, a synthetic distorted image in dependence on the combination; and including each of the synthetic distorted images in an output set.

2. 发明申请

WO2017012840A1 METHODS AND APPARATUS FOR SIMULATING INTERACTION OF RADIATION WITH STRUCTURES, METROLOGY METHODS AND APPARATUS, DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：用于模拟辐射与结构的相互作用的方法和装置，计量方法和装置，装置制造方法
公开(公告)号：WO2017012840A1
公开(公告)日：2017-01-26
申请号：PCT/EP2016/065258
申请日：2016-06-30
申请人： ASML NETHERLANDS B.V.
发明人： DIRKS, Remco , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , PISARENCO, Maxim
IPC分类号： G03F7/20
CPC分类号： G06F17/5009 , G03F7/70058 , G03F7/705 , G03F7/70625 , H01L21/3065 , H01L21/308 , H01L22/20
摘要： Parameters of a structure (900) are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face (904, 906) of at least one sub-structure is approximated by a series of steps (904', 906') along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts (1302, 1304) are introduced, without introducing corresponding steps.
摘要翻译：通过从观测的衍射辐射重建来测量结构（900）的参数。该方法包括以下步骤：（a）定义结构模型以表示二维或三维模型空间中的结构; （b）利用结构模型模拟辐射与结构的相互作用; 和（c）重复步骤（b），同时改变结构模型的参数。结构模型沿模型空间的至少第一维度（Z）分为一系列切片（a-f）。通过划分成切片，至少一个子结构的倾斜面（904,906）通过沿着模型空间（X）的至少第二维度的一系列步骤（904'，906'）近似。切片的数量可能随参数变化而动态变化。接近所述倾斜面的步骤数保持恒定。引入附加切割（1302,1304），而不引入相应的步骤。

3. 发明申请

WO2015018625A1 METROLOGY METHOD AND APPARATUS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：计量方法和装置，光刻系统和装置制造方法
公开(公告)号：WO2015018625A1
公开(公告)日：2015-02-12
申请号：PCT/EP2014/065461
申请日：2014-07-18
申请人： ASML NETHERLANDS B.V.
发明人： MIDDLEBROOKS, Scott, Anderson , GEYPEN, Niels , SMILDE, Hendrik, Jan, Hidde , STRAAIJER, Alexander , VAN DER SCHAAR, Maurits , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria
IPC分类号： G03F7/20
CPC分类号： G03F7/70633
摘要： Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
摘要翻译：公开了一种测量光刻工艺参数的方法和相关检验装置。该方法包括使用多个不同的照明条件在衬底上测量至少两个目标结构，所述目标结构具有故意的覆盖偏移; 为每个目标结构获得表示总体不对称性的不对称测量，其包括由于（i）故意覆盖偏移引起的贡献，（ii）在形成目标结构期间的覆盖误差和（iii）任何特征不对称性。对不对称测量数据进行回归分析，通过将线性回归模型拟合到针对另一目标结构的不对称测量的一个目标结构的不对称测量的平面表示，线性回归模型不一定通过平面表示的原点拟合。然后可以从线性回归模型描述的梯度确定覆盖误差。

4. 发明申请

WO2021013519A1 IMPROVEMENTS IN METROLOGY TARGETS 审中-公开
公开(公告)号：WO2021013519A1
公开(公告)日：2021-01-28
申请号：PCT/EP2020/069001
申请日：2020-07-06
申请人： ASML NETHERLANDS B.V. , ASML HOLDING N.V.
发明人： MEHTA, Nikhil , COTTAAR, Jeroen , WARNAAR, Patrick , VAN DER SCHAAR, Maurits , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , CRAMER, Hugo, Augustinus, Joseph , ZWIER, Olger, Victor
IPC分类号： G03F7/00 , G03F7/20 , G03F1/42
摘要： Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

5. 发明申请

WO2019219314A1 METHODS AND APPARATUS FOR CALCULATING ELECTROMAGNETIC SCATTERING PROPERTIES OF A STRUCTURE 审中-公开
公开(公告)号：WO2019219314A1
公开(公告)日：2019-11-21
申请号：PCT/EP2019/059732
申请日：2019-04-16
申请人： ASML NETHERLANDS B.V.
发明人： VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , PISARENCO, Maxim , QUINTANILHA, Richard
IPC分类号： G03F7/20
摘要： A method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, the method comprising a step (1008) of numerically solving a volume integral equation comprising a nominal linear system to determine a nominal vector field being independent with respect to the structural perturbation; a step (1010) of using a perturbed linear system to determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; and a step (1012) of calculating electromagnetic scattering properties of the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.

6. 发明申请

WO2019015995A1 METHODS AND APPARATUS FOR MEASUREMENT OF A PARAMETER OF A FEATURE FABRICATED ON A SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：WO2019015995A1
公开(公告)日：2019-01-24
申请号：PCT/EP2018/068346
申请日：2018-07-06
申请人： ASML NETHERLANDS B.V.
发明人： PISARENCO, Maxim , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , GOORDEN, Sebastianus, Adrianus
IPC分类号： G03F7/20
摘要： Methods and apparatus for estimation of at least one parameter of interest of a feature fabricated on a substrate, the feature comprising a plurality of structure parameters, the structure parameters comprising the at least one parameter of interest and one or more nuisance parameters. A receiver receives radiation scattered from one or more measured features on the substrate; a pupil generator generates an unprocessed pupil representation of the received radiation; a matrix multiplier multiplies the transformation matrix with the intensities of each of the pixels of the unprocessed pupil representation to determine a post-processed pupil representation in which the effects of the nuisance parameters are mitigated or removed; and a parameter estimator estimates the at least one parameter of interest based on the post-processed pupil representation.

7. 发明申请

WO2017063839A1 METHODS AND APPARATUS FOR SIMULATING INTERACTION OF RADIATION WITH STRUCTURES, METROLOGY METHODS AND APPARATUS, DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：用于模拟辐射与结构相互作用的方法和装置，计量方法和装置，装置制造方法
公开(公告)号：WO2017063839A1
公开(公告)日：2017-04-20
申请号：PCT/EP2016/072500
申请日：2016-09-22
申请人： ASML NETHERLANDS B.V.
发明人： PISARENCO, Maxim , QUINTANILHA, Richard , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria
IPC分类号： G03F7/20
CPC分类号： G03F7/70625 , G01B15/00 , G01N23/201 , G01N2223/501 , G03F7/705
摘要： A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.
摘要翻译：感兴趣的结构例如在X射线或EUV波段中用辐射照射，并且由检测器（306）检测散射辐射。处理器（308）通过模拟辐射与结构的相互作用并将模拟的相互作用与检测到的辐射进行比较来计算诸如线宽（CD）的属性。使用分层结构模型（600,610）以数值方法表示结构。结构模型为结构的每一层定义了均匀的背景介电常数，并且为至少一个层定义了非均匀的对比介电常数。该方法使用Born近似中的麦克斯韦方程，其中对比介电常数和总场的乘积近似为对比介电常数和背景场的乘积。与已知方法相比，计算复杂度降低了几个数量级。

8. 发明申请

WO2022233546A1 METHOD FOR DETERMINING A STOCHASTIC METRIC RELATING TO A LITHOGRAPHIC PROCESS 审中-公开
公开(公告)号：WO2022233546A1
公开(公告)日：2022-11-10
申请号：PCT/EP2022/059781
申请日：2022-04-12
申请人： ASML NETHERLANDS B.V.
发明人： BATISTAKIS, Chrysostomos , PISARENCO, Maxim , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , RUTIGLIANI, Vito, Daniele , MIDDLEBROOKS, Scott, Anderson , VERSCHUREN, Coen, Adrianus , GEYPEN, Niels
IPC分类号： G03F7/20 , G06N20/00
摘要： A method of determining a stochastic metric, the method comprising: obtaining a trained model having been trained to correlate training optical metrology data to training stochastic metric data, wherein the training optical metrology data comprises a plurality of measurement signals relating to distributions of an intensity related parameter across a zero or higher order of diffraction of radiation scattered from a plurality of training structures, and the training stochastic metric data comprises stochastic metric values relating to said plurality of training structures, wherein the plurality of training structures have been formed with a variation in one or more dimensions on which said stochastic metric is dependent; obtaining optical metrology data comprising a distribution of the intensity related parameter across a zero or higher order of diffraction of radiation scattered from a structure; and using the trained model to infer a value of the stochastic metric from the optical metrology data.

9. 发明申请

WO2022128687A1 METROLOGY TARGET SIMULATION 审中-公开
公开(公告)号：WO2022128687A1
公开(公告)日：2022-06-23
申请号：PCT/EP2021/084829
申请日：2021-12-08
申请人： ASML NETHERLANDS B.V.
发明人： VAN KRAAIJ, Markus, Gerardus, Martinus, Maria
IPC分类号： G02B5/18 , G03F7/20 , G03F9/00
摘要： A method of simulating an electromagnetic response of a metrology target comprising first and second gratings, wherein the second grating is below the first grating, the method comprising: receiving a model defining (i) the first grating as having a first number of grating lines within a pitch, each of the first number of grating lines separated by a first pitch; and (ii) the second grating as having a second number of grating lines within the pitch, each of the second number of grating lines separated by a second pitch; using the model and the first pitch to simulate properties of the first grating and generate a first scattering matrix; using the model and the second pitch to simulate properties of the second grating and generate a second scattering matrix; generating a scattering matrix defining properties of the metrology target by combining the first scattering matrix and the second scattering matrix.

10. 发明申请

WO2021104718A1 METHOD AND SYSTEM FOR PREDICTING PROCESS INFORMATION WITH A PARAMETERIZED MODEL 审中-公开
公开(公告)号：WO2021104718A1
公开(公告)日：2021-06-03
申请号：PCT/EP2020/077115
申请日：2020-09-28
申请人： ASML NETHERLANDS B.V.
发明人： MIDDLEBROOKS, Scott, Anderson , WARNAAR, Patrick , HELFENSTEIN, Patrick, Philipp , KONIJNENBERG, Alexander, Prasetya , PISARENCO, Maxim , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria
IPC分类号： G03F7/20 , G06K9/36 , G06N3/02 , G06N3/04 , G06N20/00 , G06T7/00
摘要： A method and system for predicting complex electric field images with a parameterized model are described. A latent space representation of a complex electric field image is determined based on dimensional data in a latent space of the parameterized model for a given input to the parameterized model. The given input may be a measured amplitude (e.g., intensity) associated with the complex electric field image. The complex electric field image is predicted based on the latent space representation of the complex electric field image. The predicted complex electric field image includes an amplitude and a phase. The parameterized model comprises encoder-decoder architecture. In some embodiments, determining the latent space representation of the electric field image comprises minimizing a function constrained by a set of electric field images that could be predicted by the parameterized model based on the dimensional data in the latent space and the given input.

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