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1. 发明申请

WO2021032398A1 METHOD FOR CONTROLLING A LITHOGRAPHIC APPARATUS 审中-公开
公开(公告)号：WO2021032398A1
公开(公告)日：2021-02-25
申请号：PCT/EP2020/070701
申请日：2020-07-22
申请人： ASML NETHERLANDS B.V.
发明人： YAGUBIZADE, Hadi , KIM, Min-Seok , CUI, Yingchao , SLOTBOOM, Daan, Maurits , PARK, Jeonghyun , COTTAAR, Jeroen
IPC分类号： G03F7/20
摘要： A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

2. 发明申请

WO2017055106A1 METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
标题翻译：计量方法，目标和底物
公开(公告)号：WO2017055106A1
公开(公告)日：2017-04-06
申请号：PCT/EP2016/071986
申请日：2016-09-16
申请人： ASML NETHERLANDS B.V.
发明人： SLOTBOOM, Daan, Maurits , DEN BOEF, Arie, Jeffrey , EBERT, Martin
IPC分类号： G03F7/20
CPC分类号： G03F7/70625 , G03F7/706 , G03F7/70633 , G03F7/70641 , G03F7/70683
摘要： A method of measuring a parameter of a lithographic process, the method including: illuminating a diffraction measurement target on a substrate with radiation, the measurement target including at least a first sub-target, at least a second sub-target and at least third sub-target, wherein the first, second and third sub-targets each include a periodic structure and wherein the first sub-target, second sub-target and third sub-target each have a different design and wherein at least two of the sub-targets are respectively designed for determination of a different lithographic process parameter; and detecting radiation scattered by the at least two sub-targets to obtain for that target a measurement representing the different parameters of the lithographic process.
摘要翻译：一种测量光刻工艺参数的方法，所述方法包括：用辐射照射基板上的衍射测量目标，所述测量目标至少包括第一子目标，至少第二子目标和至少第三子目标，其中第一，第二和第三子目标各自包括周期性结构，并且其中第一子目标，第二子目标和第三子目标各自具有不同的设计，并且其中至少两个子目标分别设计用于确定不同的光刻工艺参数; 以及检测由所述至少两个子目标散射的辐射，以为该目标获得代表光刻处理的不同参数的测量值。

3. 发明申请

WO2017108453A1 METHODS OF CONTROLLING A PATTERNING PROCESS, DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS 审中-公开
标题翻译：光刻设备的控制方法，设备制造方法，光刻设备和光刻设备的控制系统
公开(公告)号：WO2017108453A1
公开(公告)日：2017-06-29
申请号：PCT/EP2016/080484
申请日：2016-12-09
申请人： ASML NETHERLANDS B.V.
发明人： SLOTBOOM, Daan, Maurits , KUPERS, Michiel
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70525 , G03F7/705 , G03F7/70633 , G03F9/7073
摘要： Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing of the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.
摘要翻译：性能测量目标用于在处理多个衬底之后测量光刻工艺的性能。在设置阶段，该方法通过参考构图过程的预期参数从多个候选标记类型中选择对准标记类型和对准配方。在使用图案化工艺曝光多个测试衬底之后，通过比较由参考技术测量的图案化工艺的性能的测量性能（例如，重叠）来选择优选的度量目标类型和度量配方。基于在图案化过程的实际执行之后对位置测量标记和性能测量目标的测量结果，可以修改对准标记类型和/或配方，从而共同优化对准标记和度量目标。另外的运行反馈策略也可以在流程的后续操作中进行比较。

4. 发明申请

WO2015024783A1 LITHOGRAPHY SYSTEM AND A MACHINE LEARNING CONTROLLER FOR SUCH A LITHOGRAPHY SYSTEM 审中-公开
标题翻译： LITHOGRAPHY系统和一台机器学习控制器
公开(公告)号：WO2015024783A1
公开(公告)日：2015-02-26
申请号：PCT/EP2014/066919
申请日：2014-08-06
申请人： ASML NETHERLANDS B.V.
发明人： SCHMITT-WEAVER, Emil, Peter , HENKE, Wolfgang , HOOGENBOOM, Thomas, Leo, Maria , IZIKSON, Pavel , LUEHRMANN, Paul, Frank , SLOTBOOM, Daan, Maurits , STAECKER, Jens , YPMA, Alexander
IPC分类号： G03F7/20
CPC分类号： G03F7/70516 , G03F7/70491 , G03F7/70525 , G03F7/70625 , G03F7/70633
摘要： A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.
摘要翻译：一种光刻系统，被配置为将图案应用于基底，所述系统包括被配置为根据图案暴露基底层的光刻设备，以及机器学习控制器，被配置为控制光刻系统以优化图案的特性，机器学习控制器被配置为基于由测量单元测量的属性来进行训练，所述测量单元被配置成测量所述层中的暴露图案的性质和/或与将图案暴露于衬底相关联的属性，并且修正光刻系统通过调整选自以下的一个或多个漂移：光刻设备，被配置为将该层施加在用于光刻曝光的基板上的轨道单元和/或控制单元，被配置为控制轨道单元，光刻设备之间的自动衬底流动，和计量单位。

5. 发明申请

WO2020169355A1 A METHOD FOR CHARACTERIZING A MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：WO2020169355A1
公开(公告)日：2020-08-27
申请号：PCT/EP2020/053025
申请日：2020-02-06
申请人： ASML NETHERLANDS B.V.
发明人： TEL, Wim, Tjibbo , DILLEN, Hermanus, Adrianus , KEA, Marc, Jurian , THUIJS, Koen , MASLOW, Mark, John , ENGBLOM, Peter, David , HUIJGEN, Ralph, Timotheus , SLOTBOOM, Daan, Maurits , MULKENS, Johannes, Catharinus, Hubertus
IPC分类号： G03F7/20
摘要： A method of determining a characteristic of one or more processes for manufacturing features on a substrate is provided in this document, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

6. 发明申请

WO2015110210A1 APPARATUS OPERABLE TO PERFORM A MEASUREMENT OPERATION ON A SUBSTRATE, LITHOGRAPHIC APPARATUS, AND METHOD OF PERFORMING A MEASUREMENT OPERATION ON A SUBSTRATE 审中-公开
标题翻译：可用于执行基板上的测量操作的装置，地平面设备以及在基板上执行测量操作的方法
公开(公告)号：WO2015110210A1
公开(公告)日：2015-07-30
申请号：PCT/EP2014/076678
申请日：2014-12-05
申请人： ASML NETHERLANDS B.V.
发明人： SLOTBOOM, Daan, Maurits , KRAMER, Pieter, Jacob , LEENDERS, Martinus, Hendrikus, Antonius , PAARHUIS, Bart, Dinand
IPC分类号： G03F9/00
CPC分类号： G03F7/70141 , G03F9/7046 , G03F9/7096
摘要： Disclosed is an apparatus and method for performing a measurement operation on a substrate in accordance with one or more wafer alignment models. The one or more wafer alignment models are selected from a plurality of candidate wafer alignment models. The apparatus, which may be a lithographic apparatus, comprises an external interface which enables selection of the wafer alignment model(s) and/or alteration of the wafer alignment model(s) prior to said measurement operation.
摘要翻译：公开了一种用于根据一个或多个晶片对准模型在衬底上执行测量操作的装置和方法。从多个候选晶片对准模型中选择一个或多个晶片对准模型。可以是光刻设备的设备包括外部接口，其能够在所述测量操作之前选择晶片对准模型和/或改变晶片对准模型。

7. 发明申请

WO2021254810A1 LITHOGRAPHIC APPARATUS, METROLOGY SYSTEMS, AND METHODS THEREOF 审中-公开
公开(公告)号：WO2021254810A1
公开(公告)日：2021-12-23
申请号：PCT/EP2021/065197
申请日：2021-06-07
申请人： ASML NETHERLANDS B.V. , ASML HOLDING N.V.
发明人： HUISMAN, Simon, Reinald , MALYK, Sergey , LIN, Yuxiang , SLOTBOOM, Daan, Maurits
IPC分类号： G03F7/20 , G03F9/00 , G03F7/705 , G03F7/70616 , G03F9/7088
摘要： A system includes an illumination system, an optical element, a switching element and a detector. The illumination system includes a broadband light source that generates a beam of radiation. The dispersive optical element receives the beam of radiation and generates a plurality of light beams having a narrower bandwidth than the broadband light source. The optical switch receives the plurality of light beams and transmits each one of the plurality of light beams to a respective one of a plurality of alignment sensor of a sensor array. The detector receives radiation returning from the sensor array and to generate a measurement signal based on the received radiation.

8. 发明申请

WO2021047841A1 DETERMINING LITHOGRAPHIC MATCHING PERFORMANCE 审中-公开
公开(公告)号：WO2021047841A1
公开(公告)日：2021-03-18
申请号：PCT/EP2020/072473
申请日：2020-08-11
申请人： ASML NETHERLANDS B.V.
发明人： CUI, Yingchao , YAGUBIZADE, Hadi , WEI, Xiuhong , SLOTBOOM, Daan, Maurits , PARK, Jeonghyun , ROY, Sarathi , ZHANG, Yichen , KAMALI, Mohammad, Reza , KIM, Sang-Uk
IPC分类号： G03F7/20
摘要： A method for determining lithographic matching performance includes obtaining first monitoring data E1M, E3M, E4M from recurrent monitoring for stability control for the available EUV scanners EUV1, EUV3 and EUV4. For a DUV scanner, second monitoring data D2M, is similarly obtained from recurrent monitoring (DMW, MT, OV, SM) for stability control. The EUV monitoring data E1M, E3M, E4M are in a first layout. The DUV monitoring data D2M are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing 900, 1000 at least one of the first and second monitoring data into a common layout E1S, E3S, E4S, D2S to allow comparison 802 of the first and second monitoring data.

9. 发明申请

WO2017067757A1 METHOD AND APPARATUS TO CORRECT FOR PATTERNING PROCESS ERROR 审中-公开
标题翻译：纠正图案化处理错误的方法和装置
公开(公告)号：WO2017067757A1
公开(公告)日：2017-04-27
申请号：PCT/EP2016/072960
申请日：2016-09-27
申请人： ASML NETHERLANDS B.V.
发明人： TEN BERGE, Peter , SLOTBOOM, Daan, Maurits , VAN HAREN, Richard, Johannes, Franciscus , WARDENIER, Peter, Hanzen
IPC分类号： G03F1/72 , G03F7/20
CPC分类号： G03F1/72
摘要： A method including: determining first error information (1310) based on a first measurement and/or simulation result (1300) pertaining to a first patterning device in a patterning system; determining second error information (1330) based on a second measurement and/or simulation result (1320) pertaining to a second patterning device in the patterning system; determining (1340) a difference between the first error information and the second error information; and creating, by a computer system, modification information (1360) for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.
摘要翻译：一种方法，包括：基于与图案化系统中的第一图案形成装置有关的第一测量和/或模拟结果（1300）来确定第一误差信息（1310）基于与图案化系统中的第二图案形成装置有关的第二测量和/或模拟结果（1320）确定第二误差信息（1330）确定（1340）第一错误信息和第二错误信息之间的差异; 以及由计算机系统基于所述第一错误信息和所述第二错误信息之间的差异来创建用于所述第一图案形成装置和/或所述第二图案形成装置的修改信息（1360），其中所述第一错误信息与所述第二错误信息根据修改信息修改第一图案形成装置和/或第二图案形成装置之后，将第二误差信息减小到一定范围内。

10. 发明申请

WO2015104074A1 LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND ASSOCIATED DATA PROCESSING APPARATUS AND COMPUTER PROGRAM PRODUCT 审中-公开
标题翻译：平面设备，设备制造方法和相关数据处理设备和计算机程序产品
公开(公告)号：WO2015104074A1
公开(公告)日：2015-07-16
申请号：PCT/EP2014/072717
申请日：2014-10-23
申请人： ASML NETHERLANDS B.V.
发明人： CEKLI, Hakki Ergün , LIU, Xing Lan , SLOTBOOM, Daan, Maurits , TEL, Wim, Tjibbo , VAN DER SANDEN, Stefan, Cornelis, Theodorus , VAN HAREN, Richard, Johannes, Franciscus
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F7/70141 , G03F9/7003 , G03F9/7092
摘要： A lithographic apparatus (LA) applies a pattern repeatedly to target portions (fields, C) across a substrate (W). Prior to applying the pattern an alignment sensor (AS) measures positions of marks in the plane of the substrate and a level sensor (LS) measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while (a) positioning the applied pattern using the positions measured by the alignment sensor and (b) focusing the pattern using the height deviations measured by the level sensor. The apparatus is further arranged (c) to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.
摘要翻译：光刻设备（LA）通过衬底（W）重复地对目标部分（场，C）施加图案。在施加图案之前，对准传感器（AS）测量标记在基板的平面中的位置，并且液位传感器（LS）测量垂直于基板平面的方向的高度偏差。该装置将图案应用于基板，同时（a）使用由对准传感器测量的位置定位所施加的图案，并且（b）使用由液位传感器测量的高度偏差对图案进行聚焦。该设备还被布置为（c）基于所测量的高度偏差的导数来计算和应用所施加的图案的定位中的校正。校正可以在场内和/或场间基础上计算。校正可以基于先前在同一衬底上测量的观察到的高度偏差和高度偏差之间的变化。

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