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    • 10. 发明申请
    • NANOWIRE HETEROSTRUCTURES
    • WO2006132659A2
    • 2006-12-14
    • PCT/US2005/034345
    • 2005-09-21
    • PRESIDENT AND FELLOWS OF HARVARD COLLEGELU, WeiXIANG, JieTIMKO, Brian, P.WU, YueYAN, HaoLIEBER, Charles, M.
    • LU, WeiXIANG, JieTIMKO, Brian, P.WU, YueYAN, HaoLIEBER, Charles, M.
    • H01L29/06
    • B82Y10/00G11C2213/17G11C2213/18H01L29/0665H01L29/0673H01L29/068H01L29/1606H01L29/165
    • The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and/or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invention provides a solid nanowire having a core and a shell, both of which are essentially undoped. For example, in one embodiment, the core may consist essentially of undoped germanium and the shell may consist essentially of undoped silicon. Carriers are injected into the nanowire, which can be ballistically transported through the nanowire. In other embodiments, however, the invention is not limited to solid nanowires, and other configurations, involving other nanoscale wires, are also contemplated within the scope of the present invention. Yet another aspect of the invention provides a junction between a metal and a nanoscale wire that exhibit no or reduced Schottky barriers. As a non-limiting example, a nanoscale wire having a core and a shell may be in physical contact with a metal electrode, such that the Schottky barrier to the core is reduced or eliminated. Still other aspects of the invention are directed to electronic devices exhibiting such properties, and techniques for methods of making or using such devices.
    • 本发明一般涉及纳米尺度异质结构,在某些情况下涉及显示弹道输运的纳米线异质结构,和/或涉及没有或减少的肖特基势垒的金属 - 半导体结。 本发明的一个方面提供了具有核和壳的固体纳米线,两者都基本上是未掺杂的。 例如,在一个实施例中,芯可以基本上由未掺杂的锗组成,并且壳可以基本上由未掺杂的硅组成。 载体被注入纳米线,可以通过纳米线进行弹道传输。 然而,在其它实施方案中,本发明不限于固体纳米线,并且涉及其它纳米尺寸线的其它构型也在本发明的范围内。 本发明的另一方面提供了金属和纳米尺寸线之间的连接处,其不显示或减小肖特基势垒。 作为非限制性实例,具有芯和壳的纳米线可以与金属电极物理接触,使得芯的肖特基势垒被减少或消除。 本发明的其它方面涉及具有这种性质的电子设备,以及制造或使用这些设备的方法的技术。