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1. 发明申请

WO2012033574A3 METHODS TO ADJUST THRESHOLD VOLTAGE IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件中调节阈值电压的方法
公开(公告)号：WO2012033574A3
公开(公告)日：2012-05-03
申请号：PCT/US2011045320
申请日：2011-07-26
申请人： APPLIED MATERIALS INC , WARD MICHAEL G , PEIDOUS IGOR V , CHIANG SUNNY , TA YEN B , DARLAK ANDREW , PORSHNEV PETER I , SRINIVASAN SWAMINATHAN
发明人： WARD MICHAEL G , PEIDOUS IGOR V , CHIANG SUNNY , DARLAK ANDREW , PORSHNEV PETER I , SRINIVASAN SWAMINATHAN
IPC分类号： H01L21/336 , H01L21/8228 , H01L29/78
CPC分类号： H01L21/823842 , H01J37/32412 , H01L21/28088 , H01L21/28202 , H01L21/28229 , H01L29/78
摘要： Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.
摘要翻译：本文提供了在基板上形成器件的方法。在一些实施例中，在衬底上形成器件的方法可以包括提供具有设置在衬底上的部分制造的第一器件的衬底，第一器件包括第一膜堆叠，其包括第一介电层和第一高k电介质层设置在第一电介质层的顶部; 在第一薄膜叠层顶上沉积第一金属层; 以及修改所述第一金属层的第一上表面以调整所述第一器件的第一阈值电压，其中所述第一上表面的修改不延伸穿过所述第一金属层的第一下表面。

2. 发明申请

WO2012154373A2 SURFACE DOSE RETENTION OF DOPANTS BY PRE-AMORPHIZATION AND POST-IMPLANT PASSIVATION TREATMENTS 审中-公开
标题翻译：通过预先制备和后植入钝化治疗表面剂量维持
公开(公告)号：WO2012154373A2
公开(公告)日：2012-11-15
申请号：PCT/US2012033871
申请日：2012-04-17
申请人： APPLIED MATERIALS INC , SANTHANAM KARTIK , VELLAIKAL MANOJ , TA YEN B , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I
发明人： SANTHANAM KARTIK , VELLAIKAL MANOJ , TA YEN B , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I
IPC分类号： H01L21/265
CPC分类号： H01J37/32412 , H01L21/2236
摘要： The invention generally relates to pre-implant and post-implant treatments to promote the retention of dopants near the surface of an implanted substrate. The pre-implant treatments include forming a plasma from an inert gas and implanting the inert gas into the substrate to render an upper portion of the substrate amorphous. The post-implant treatment includes forming a passivation layer on the upper surface of the substrate after doping the substrate in order to retain the dopant during a subsequent activation anneal.
摘要翻译：本发明一般涉及植入前和植入后处理以促进植入的基底表面附近的掺杂剂的保留。植入物前处理包括从惰性气体形成等离子体并将惰性气体注入衬底中以使衬底的上部无定形。植入后处理包括在掺杂衬底之后在衬底的上表面上形成钝化层，以便在随后的激活退火期间保留掺杂剂。

3. 发明申请

WO2012036963A3 INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES 审中-公开
标题翻译：集成平台，用于基站的切割和激活
公开(公告)号：WO2012036963A3
公开(公告)日：2012-05-31
申请号：PCT/US2011050759
申请日：2011-09-08
申请人： APPLIED MATERIALS INC , SANTHANAM KARTIK , HILKENE MARTIN A , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I , SRINIVASAN SWAMINATHAN , RAMAMURTHY SUNDAR
发明人： SANTHANAM KARTIK , HILKENE MARTIN A , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I , SRINIVASAN SWAMINATHAN , RAMAMURTHY SUNDAR
IPC分类号： H01L21/265 , H01L21/22
CPC分类号： H01L21/2236 , H01L21/324 , H01L21/67207
摘要： An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.
摘要翻译：一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传送室的掺杂室，所述掺杂室被配置为将掺杂元素注入或沉积在衬底的表面中或其上; 掺杂剂激活室，其耦合到所述真空衬底传送室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂元素; 以及控制器，被配置为控制所述集成平台，所述控制器包括具有存储在其上的指令的计算机可读介质，当由所述控制器执行时，所述控制器使所述集成平台执行方法，所述方法包括：使用一个或多个掺杂剂掺杂室中的元素; 将衬底真空转移到掺杂剂活化室; 以及退火所述掺杂剂激活室中的所述衬底以激活所述掺杂元素。

4. 发明申请

WO2011066508A2 CHAMBER FOR PROCESSING HARD DISK DRIVE SUBSTRATES 审中-公开
标题翻译：用于加工硬盘驱动基板的机箱
公开(公告)号：WO2011066508A2
公开(公告)日：2011-06-03
申请号：PCT/US2010058211
申请日：2010-11-29
申请人： APPLIED MATERIALS INC , FOAD MAJEED ALI , HILKENE MARTIN A , PORSHNEV PETER I , MARIN JOSE-ANTONIO , SCOTNEY-CASTLE MATTHEW D
发明人： FOAD MAJEED ALI , HILKENE MARTIN A , PORSHNEV PETER I , MARIN JOSE-ANTONIO , SCOTNEY-CASTLE MATTHEW D
IPC分类号： G11B5/84
CPC分类号： G11B5/8404
摘要： An apparatus for forming a magnetic pattern in a magnetic storage substrate. A chamber comprises a chamber wall that defines an internal volume, a substrate support in the internal volume of the chamber, a gas distributor disposed in a wall region of the chamber facing the substrate support, a compact energy source for ionizing a portion of the process gas provided to the chamber, and a throttle valve having a z-actuated gate member with a sealing surface for covering an outlet portal of the chamber. Ions are accelerated toward the substrate support by an electrical bias, amplifying the ion density of the process gas. A substrate disposed on the substrate support is bombarded by the ions to alter a magnetic property of the substrate surface.
摘要翻译：一种用于在磁存储基板中形成磁图案的装置。室包括限定内部容积的室壁，室的内部体积中的衬底支撑件，布置在面向衬底支撑件的腔室的壁区域中的气体分配器，用于使过程的一部分电离的紧凑的能量源提供给腔室的气体以及具有z致动门构件的节流阀，其具有用于覆盖腔室出口的密封表面。离子通过电偏压加速朝向衬底支撑，从而放大工艺气体的离子密度。设置在基板支撑体上的基板被离子轰击以改变基板表面的磁性。

5. 发明申请

WO2013012562A3 METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：用于控制基板处理系统中功率分配的方法和装置
公开(公告)号：WO2013012562A3
公开(公告)日：2013-04-04
申请号：PCT/US2012045496
申请日：2012-07-05
申请人： APPLIED MATERIALS INC , LAI CANFENG , ABERLE DAVID E , KAMP MICHAEL P , BARANDICA HENRY , HILKENE MARTIN A , SCOTNEY-CASTLE MATTHEW D , TOBIN JEFFREY , BURNS DOUGLAS H , HAWRYLCHAK LARA , PORSHNEV PETER I
发明人： LAI CANFENG , ABERLE DAVID E , KAMP MICHAEL P , BARANDICA HENRY , HILKENE MARTIN A , SCOTNEY-CASTLE MATTHEW D , TOBIN JEFFREY , BURNS DOUGLAS H , HAWRYLCHAK LARA , PORSHNEV PETER I
IPC分类号： H05H1/46 , H01L21/3065 , H03H7/40
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32155 , H01J37/32174
摘要： Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.
摘要翻译：提供了一种用于控制基板处理系统中的配电的方法和装置。在一些实施例中，衬底处理系统包括具有衬底支撑件的处理室和设置在衬底支架上方的处理区域; 设置在所述处理区域上方以提供延伸穿过所述第一管道并横跨所述处理区域的第一环形路径的一部分的第一管道; 设置在所述处理区域上方的第二导管，以提供延伸穿过所述第二导管并横跨所述处理区域的第二环形路径的一部分; 耦合到所述第一和第二导管的RF发生器，以向所述第一和第二导管中的每一个提供具有第一频率的RF能量; 设置在所述RF发生器与所述第一和第二管道之间的阻抗匹配网络; 以及功率分配器，用于控制从RF发生器提供给第一和第二导管的RF能量的量。

6. 发明申请

WO2012166850A2 METHODS FOR REPAIRING LOW-K DIELECTRICS USING CARBON PLASMA IMMERSION 审中-公开
标题翻译：使用碳等离子体浸渍修复低K电介质的方法
公开(公告)号：WO2012166850A2
公开(公告)日：2012-12-06
申请号：PCT/US2012040094
申请日：2012-05-31
申请人： APPLIED MATERIALS INC , YAO DAPING , PORSHNEV PETER I
发明人： YAO DAPING , PORSHNEV PETER I
IPC分类号： H01L21/268 , H01L21/31
CPC分类号： H01L21/31155 , H01J37/32412 , H01L21/02126 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L2221/1063
摘要： Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.
摘要翻译：本文提供了使用等离子体浸渍碳掺杂工艺修复低k电介质的方法。在一些实施例中，修复设置在具有通过低k电介质材料布置的一个或多个特征的衬底上的低k电介质材料的方法可以包括在低k电介质材料上以及在一个或多个更多功能; 并使用等离子体掺杂工艺用碳掺杂保形氧化物层。

7. 发明申请

WO2010051266A2 IMPROVING THE CONFORMAL DOPING IN P3I CHAMBER 审中-公开
标题翻译：改善P3I室的一致性掺杂
公开(公告)号：WO2010051266A2
公开(公告)日：2010-05-06
申请号：PCT/US2009062172
申请日：2009-10-27
申请人： APPLIED MATERIALS INC , PORSHNEV PETER I , SCOTNEY-CASTLE MATTHEW D , FOAD MAJEED ALI
发明人： PORSHNEV PETER I , SCOTNEY-CASTLE MATTHEW D , FOAD MAJEED ALI
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01J37/32412
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surface having one or more features formed therein and each feature having one or more horizontal surfaces and one or more vertical surfaces, generating a plasma from a gas mixture including a reacting gas adapted to produce ions, depositing a material layer on the substrate surface and on at least one horizontal surface of the substrate feature, implanting ions from the plasma into the substrate by an isotropic process into at least one horizontal surface and into at least one vertical surface, and etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入到衬底中的方法。在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，该衬底包括具有形成在其中的一个或多个特征的衬底表面，并且每个特征具有一个或多个水平表面和一个或多个垂直表面，来自气体混合物的等离子体，所述气体混合物包括适于产生离子的反应气体，在衬底表面上和衬底特征的至少一个水平表面上沉积材料层，通过各向同性工艺将等离子体中的离子注入到衬底中一个水平表面并进入至少一个垂直表面，并且通过各向异性工艺蚀刻衬底表面和至少一个水平表面上的材料层。

8. 发明申请

WO2012125317A9 METHODS AND APPARATUS FOR CONFORMAL DOPING 审中-公开
标题翻译：方法和装置的一致性排除
公开(公告)号：WO2012125317A9
公开(公告)日：2013-04-04
申请号：PCT/US2012027659
申请日：2012-03-05
申请人： APPLIED MATERIALS INC , SANTHANAM KARTIK , HILKENE MARTIN A , VELLAIKAL MANOJ , LEE MARK R , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I
发明人： SANTHANAM KARTIK , HILKENE MARTIN A , VELLAIKAL MANOJ , LEE MARK R , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32623 , H01J37/32669 , H01L21/324
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，掺杂衬底的方法可以包括通过使用等离子体掺杂工艺将一个或多个掺杂剂元素注入衬底的掺杂剂区域来在衬底上形成掺杂剂区域; 在掺杂剂区域的顶部形成帽层; 在形成盖层之后退火掺杂剂区域; 并且在退火掺杂剂区域之后去除覆盖层。

9. 发明申请

WO2012125317A3 METHODS AND APPARATUS FOR CONFORMAL DOPING 审中-公开
标题翻译：均匀掺杂的方法和设备
公开(公告)号：WO2012125317A3
公开(公告)日：2012-12-06
申请号：PCT/US2012027659
申请日：2012-03-05
申请人： APPLIED MATERIALS INC , SANTHANAM KARTIK , HILKENE MARTIN A , VELLAIKAL MANOJ , LEE MARK R , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I
发明人： SANTHANAM KARTIK , HILKENE MARTIN A , VELLAIKAL MANOJ , LEE MARK R , SCOTNEY-CASTLE MATTHEW D , PORSHNEV PETER I
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32623 , H01J37/32669 , H01L21/324
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.
摘要翻译：本文提供了用于处理基板的方法和设备。在一些实施例中，一种掺杂衬底的方法可以包括：通过使用等离子体掺杂工艺将一种或多种掺杂剂元素注入到衬底的掺杂剂区域中，在衬底上形成掺杂剂区域; 在掺杂剂区域顶上形成覆盖层; 在形成覆盖层之后退火掺杂剂区域; 并且在退火掺杂剂区域之后去除覆盖层。

10. 发明申请

WO2012015740A3 RESIST FORTIFICATION FOR MAGNETIC MEDIA PATTERNING 审中-公开
标题翻译：磁性介质图案的抗干扰性
公开(公告)号：WO2012015740A3
公开(公告)日：2012-04-19
申请号：PCT/US2011045190
申请日：2011-07-25
申请人： APPLIED MATERIALS INC , BENCHER CHRISTOPHER D , GOUK ROMAN , VERHAVERBEKE STEVEN , XIA LI-QUN , LEE YONG-WON , SCOTNEY-CASTLE MATTHEW D , HILKENE MARTIN A , PORSHNEV PETER I
发明人： BENCHER CHRISTOPHER D , GOUK ROMAN , VERHAVERBEKE STEVEN , XIA LI-QUN , LEE YONG-WON , SCOTNEY-CASTLE MATTHEW D , HILKENE MARTIN A , PORSHNEV PETER I
IPC分类号： G11B5/84
CPC分类号： G11B5/85 , G11B5/743 , G11B5/855
摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
摘要翻译：提供了一种用于形成磁介质基底的方法和设备。在具有磁敏感层的衬底上形成图案化的抗蚀剂层。在图案化的抗蚀剂层上方形成共形保护层以防止在后续处理期间图案的退化。对衬底进行能量处理，其中高能物质根据图案化抗蚀剂中形成的图案穿透图案化抗蚀剂和保形保护层的部分，撞击磁敏层并改变其磁性。然后去除图案化的抗蚀剂和保形保护层，留下具有基本上未改变的形貌的磁性图案的磁性基板。

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