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1. 发明申请

WO2006121604A3 CONDUCTIVE BARRIER LAYER, ESPECIALLY AN ALLOY OF RUTHENIUM AND TANTALUM AND SPUTTER DEPOSITION THEREOF 审中-公开
标题翻译：导电阻隔层，特别是钌和钽的合金和溅射沉积物
公开(公告)号：WO2006121604A3
公开(公告)日：2007-09-13
申请号：PCT/US2006015523
申请日：2006-04-25
申请人： APPLIED MATERIALS INC , WANG JENN YUE , WANG WEL D , WANG RONGJIUM , TANAKA YOICHIRO , CHUNG HUA , ZHANG HONG , YU JICK , GOPALRAJA PRABURAM , FU JIANMING
发明人： WANG JENN YUE , WANG WEL D , WANG RONGJIUM , TANAKA YOICHIRO , CHUNG HUA , ZHANG HONG , YU JICK , GOPALRAJA PRABURAM , FU JIANMING
IPC分类号： C23C14/34 , H01L21/44 , H01L27/095
CPC分类号： B32B15/018 , C23C14/3414 , H01L21/2855 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer (82) comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not require to be so. The barrier layer may be sputtered from a target (90) of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer (112) may be formed of an alloy of copper and ruthenium in contact to a barrier layer (70) over the dielectric (66).
摘要翻译：用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。阻挡层（82）包括诸如钌/钽合金的难熔贵金属合金的导电金属，其可以是无定形的，尽管不需要这样。阻挡层可以从类似组成的靶（90）溅射。阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。铜高贵种子层（112）可以由铜和钌的合金形成，与电介质（66）上的阻挡层（70）接触。

2. 发明申请

WO2008027186A2 INTEGRATED PROCESS FOR SPUTTER DEPOSITION OF A CONDUCTIVE BARRIER LAYER, ESPECIALLY AN ALLOY OF RUTHENIUM AND TANTALUM, UNDERLYING COPPER OR COPPER ALLOY SEED LAYER 审中-公开
标题翻译：导电阻挡层溅射沉积的综合工艺，特别是铜和钽的合金，铜或铜合金层
公开(公告)号：WO2008027186A2
公开(公告)日：2008-03-06
申请号：PCT/US2007017967
申请日：2007-08-14
申请人： APPLIED MATERIALS INC , WANG RONGJUN , CHUNG HUA , TANG XIANMIN , WANG JENN YUE , WANG WEI D , TANAKA YOICHIRO , YU JICK M , GOPALRAJA PRABURAM
发明人： WANG RONGJUN , CHUNG HUA , TANG XIANMIN , WANG JENN YUE , WANG WEI D , TANAKA YOICHIRO , YU JICK M , GOPALRAJA PRABURAM
IPC分类号： B32B7/00 , B05D5/12 , B32B3/00 , C23C14/00 , C23C16/00
CPC分类号： C23C14/046 , C23C14/0641 , C23C14/165 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926 , H01L2924/00
摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a hole (88) through a dielectric layer (86) a barrier layer (132) of RuTaN, an adhesion layer (112) of RuTa, and a copper seed layer (114) forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at% and more preferably at least 80 at% but less than 95 at%. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa (192, 194) when annealed presents a moisture barrier. Copper contacts (232, 238) include different alloying fractions of RuTa to shift the work function to the doping type of the silicon (216, 218).
摘要翻译：用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。一个实施例包括穿过介电层（86）的孔（88）中的RuTaN的阻挡层（132），RuTa的粘合层（112）和形成铜电镀衬垫的铜籽晶层（114）。钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。阻挡层和粘附层可以被溅射沉积。其他铂族元素代替钌和其他难熔金属代替钽。当退火时，铝合金化成RuTa（192,194）具有防潮层。铜触点（232,238）包括RuTa的不同合金分数，以将功函数移动到硅的掺杂类型（216,218）。

3. 发明申请

WO2007102970A3 ETCH AND SIDEWALL SELECTIVITY IN PLASMA SPUTTERING 审中-公开
标题翻译：等离子喷溅中的ETCH和SIDEWALL选择性
公开(公告)号：WO2007102970A3
公开(公告)日：2008-10-09
申请号：PCT/US2007003482
申请日：2007-02-08
申请人： APPLIED MATERIALS INC , TANG XIANMIN , GOPALRAJA PRABURAM , WANG JENN YUE , YU JICK
发明人： TANG XIANMIN , GOPALRAJA PRABURAM , WANG JENN YUE , YU JICK
IPC分类号： C23C14/35
CPC分类号： C23C14/165 , C23C14/5873 , H01J37/321 , H01J37/3266 , H01J37/3408 , H01J2237/334 , H01L21/2855 , H01L21/32136 , H01L21/76844
摘要： A substrate processing method practiced in a plasma sputter reactor (8) including an RF coil (44) and two or more coaxial electromagnets (78, 80), at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.
摘要翻译：在包括RF线圈（44）和两个或更多个同轴电磁体（78,80）的等离子体溅射反应器（8）中实施的衬底处理方法，其中至少两个以不同的半径缠绕。在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除侧壁不对称。例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。在一个实施例中，转向拉直晶片边缘附近的轨迹。在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。本发明也可以应用于其它材料，例如铜。

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