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1. 发明申请

WO2011139435A3 HIGH-TEMPERATURE SELECTIVE DRY ETCH HAVING REDUCED POST-ETCH SOLID RESIDUE 审中-公开
标题翻译：具有减少后固化残留物的高温选择性干燥剂
公开(公告)号：WO2011139435A3
公开(公告)日：2012-01-26
申请号：PCT/US2011030582
申请日：2011-03-30
申请人： APPLIED MATERIALS INC , THADANI KIRAN V , TANG JING , INGLE NITIN , YANG DONGQING
发明人： THADANI KIRAN V , TANG JING , INGLE NITIN , YANG DONGQING
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357
摘要： Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
摘要翻译：描述了干法蚀刻含硅介电膜的方法。这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。部分或完全避免固体残余物的积累增加了蚀刻速率。

2. 发明申请

WO2012106033A3 UNIFORM DRY ETCH IN TWO STAGES 审中-公开
标题翻译：在两个阶段统一烘干
公开(公告)号：WO2012106033A3
公开(公告)日：2012-11-29
申请号：PCT/US2011064724
申请日：2011-12-13
申请人： APPLIED MATERIALS INC , YANG DONGQING , TANG JING , INGLE NITIN
发明人： YANG DONGQING , TANG JING , INGLE NITIN
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.
摘要翻译：描述了从多个沟槽蚀刻氧化硅的方法，其允许在沟槽之间更均匀的蚀刻速率。蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更光滑。该方法包括两个干蚀刻阶段，接着是升华步骤。第一道干法刻蚀阶段迅速除去氧化硅，并产生大量的固体残渣颗粒。第二干蚀刻阶段慢慢地除去氧化硅并且在大的固体残余颗粒中产生小的固体残余颗粒。在随后的升华步骤中，小的和大的固体残余物都被除去。两个干法蚀刻阶段之间没有升华步骤。

3. 发明申请

WO2011115761A3 INVERTABLE PATTERN LOADING WITH DRY ETCH 审中-公开
标题翻译：不可逆图案加载干燥蚀刻
公开(公告)号：WO2011115761A3
公开(公告)日：2011-12-22
申请号：PCT/US2011027221
申请日：2011-03-04
申请人： APPLIED MATERIALS INC , TANG JING , INGLE NITIN , YANG DONGQING , VENKATARAMAN SHANKAR
发明人： TANG JING , INGLE NITIN , YANG DONGQING , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091
摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
摘要翻译：描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。该方法包括两个干蚀刻循环。第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。

4. 发明申请

WO2011025655A3 SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS 审中-公开
标题翻译：用于含碳膜的硅选择干燥剂
公开(公告)号：WO2011025655A3
公开(公告)日：2011-05-19
申请号：PCT/US2010045056
申请日：2010-08-10
申请人： APPLIED MATERIALS INC , SAPRE KEDAR , TANG JING , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN
发明人： SAPRE KEDAR , TANG JING , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN
IPC分类号： H01L21/3065 , B44C1/22 , G03F7/42
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching silicon-and-carbon-containing material is described and includes a SiConiTM etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConiTM etch reducing the carbon content in the near surface region and allowing the SiConiTM etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConiTM etch further improving the effective etch rate.
摘要翻译：描述了一种蚀刻含硅和碳的材料的方法，并且包括结合活性氧流的SiConiTM蚀刻。可以在SiConiTM蚀刻之前引入活性氧，从而减少近表面区域中的碳含量，并允许SiConiTM蚀刻进行得更快。或者，可以在SiConiTM蚀刻期间引入活性氧，进一步提高有效蚀刻速率。

5. 发明申请

WO2012125654A3 METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS 审中-公开
标题翻译：用于蚀刻金属和金属氧化物膜的方法
公开(公告)号：WO2012125654A3
公开(公告)日：2012-12-27
申请号：PCT/US2012028952
申请日：2012-03-13
申请人： APPLIED MATERIALS INC , ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN
发明人： ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32422 , H01L21/31122 , H01L21/32136
摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：一种从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括使含氟气体流入基板处理室的等离子体产生区，并且将能量施加到含氟气体在等离子体产生区域中产生等离子体。等离子体包含氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应性气体，并且使反应性气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体蚀刻氧化硅层更高的蚀刻速率蚀刻含金属层。

6. 发明申请

WO2010059790A3 INTEGRATION SEQUENCES WITH TOP PROFILE MODIFICATION 审中-公开
标题翻译：整合顺序与顶级配置文件修改
公开(公告)号：WO2010059790A3
公开(公告)日：2010-08-05
申请号：PCT/US2009065088
申请日：2009-11-19
申请人： APPLIED MATERIALS INC , KAO CHIEN-TEH , LU XINLIANG , GE ZHENBIN , CHANG MEI , HUNG HOIMAN RAYMOND , INGLE NITIN
发明人： KAO CHIEN-TEH , LU XINLIANG , GE ZHENBIN , CHANG MEI , HUNG HOIMAN RAYMOND , INGLE NITIN
IPC分类号： H01L21/76 , H01L21/306
CPC分类号： H01L21/76232 , H01L21/67219 , H01L27/11521
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
摘要翻译：本发明的实施例总体上涉及用于处理半导体衬底的设备和方法。特别地，本发明的实施例涉及用于形成具有圆底的凹陷的浅沟槽隔离的装置和方法。本发明的一个实施例包括通过从填充的沟槽结构去除一部分材料并且使凹陷的底部角落倒圆来在填充的沟槽结构中形成凹槽。通过在衬底上方沉积填充在沟槽结构中的相同材料的共形层并从凹槽的侧壁去除材料的共形层来执行圆角底部拐角。

7. 发明申请

WO2012125656A3 METHODS FOR ETCH OF SIN FILMS 审中-公开
标题翻译：方法用于刻蚀薄膜
公开(公告)号：WO2012125656A3
公开(公告)日：2012-12-13
申请号：PCT/US2012028957
申请日：2012-03-13
申请人： APPLIED MATERIALS INC , ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN
发明人： ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN
IPC分类号： H01L21/3065 , H01L21/318
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包含氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

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