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    • 1. 发明申请
    • DUAL CHAMBER MEGASONIC CLEANER
    • 双室MEGASONIC CLEANER
    • WO2009158378A2
    • 2009-12-30
    • PCT/US2009048390
    • 2009-06-24
    • APPLIED MATERIALS INCMARTINEZ RICARDOD AMBRA ALLEN LBLANK ADRIANBRITCHER THUYCHEN HUI
    • MARTINEZ RICARDOD AMBRA ALLEN LBLANK ADRIANBRITCHER THUYCHEN HUI
    • H01L21/304H01L21/302
    • B08B3/12H01L21/67051
    • Embodiments described herein relate to semiconductor device manufacturing, and more particularly to a vertically oriented dual megasonic module for simultaneously cleaning multiple substrates. In one embodiment, an apparatus for cleaning multiple substrates is provided. The apparatus comprises an outer tank for collecting overflow processing fluid comprising at least one sidewall and a bottom. A first inner module adapted to contain a processing fluid is positioned partially within the outer tank. The first inner module comprises one or more roller assemblies to hold a substrate in a substantially vertical orientation. A second inner module adapted to contain a processing fluid is positioned partially within the outer tank. The second inner module comprises one or more roller assemblies adapted to hold a substrate in a substantially vertical orientation. Each inner module contains a transducer adapted to direct vibrational energy through the processing fluid toward the substrates.
    • 本文所述的实施例涉及半导体器件制造,更具体地,涉及用于同时清洁多个基板的垂直取向的双兆赫模块。 在一个实施例中,提供了一种用于清洁多个基板的装置。 该装置包括用于收集包括至少一个侧壁和底部的溢流处理流体的外槽。 适于容纳处理流体的第一内部模块部分地位于外部容器内。 第一内部模块包括一个或多个辊组件以将基板保持在基本垂直的方向。 适于容纳处理流体的第二内部模块部分地位于外部罐中。 第二内部模块包括一个或多个辊组件,其适于将基板保持在基本垂直的方向。 每个内部模块包含适于将振动能量通过处理流体引向基板的换能器。
    • 5. 发明申请
    • SEAL INSTALLATION TOOL
    • 密封安装工具
    • WO2009114664A3
    • 2009-11-05
    • PCT/US2009036906
    • 2009-03-12
    • APPLIED MATERIALS INCCHEN HUI
    • CHEN HUI
    • B25B33/00B25B27/20B25B27/28F16L23/02F16L23/18
    • B23P19/084B25B27/0028Y10T29/49963Y10T29/53878Y10T29/53909Y10T29/53943
    • A tool is provided to facilitate the assembly of a seal ring. The tool comprises an elongated body and a flange projecting radially from the elongated body. A first portion of the tool is configured to receive the placement of a seal ring and a retainer cap thereon. The retainer cap may carry attachment elements, such as screws, used to secure the retainer cap on the housing. To mount the seal ring, the tool is inserted through a shaft hole of the housing to clamp the seal ring and the retainer cap between the housing and a flange of the tool. The attachment elements then are tightened to fix the retainer cap on the housing, which secures the seal ring sandwiched between the retainer cap and the housing. After the assembly of the seal ring is completed, the tool may then be slidably removed.
    • 提供了一种工具来促进密封环的组装。 该工具包括细长主体和从细长主体径向突出的凸缘。 工具的第一部分构造成接收其上的密封环和保持盖的放置。 保持帽可以承载用于将保持帽固定在壳体上的附接元件,例如螺钉。 为了安装密封环,工具通过壳体的轴孔插入,以将密封环和保持帽夹紧在壳体和工具的法兰之间。 然后拧紧附接元件以将保持器盖固定在壳体上,其将密封环固定在保持器盖和壳体之间。 在完成密封环的组装之后,可以滑动地移除工具。
    • 7. 发明申请
    • METHOD OF ETCHING CARBON-CONTAINING SILICON OXIDE FILMS
    • 蚀刻含碳氧化硅膜的方法
    • WO0219408A3
    • 2002-06-13
    • PCT/US0126314
    • 2001-08-22
    • APPLIED MATERIALS INC
    • HSIEH CHANG LINCHEN HUIYUAN JIEYE YAN
    • H01L21/3065H01L21/311
    • H01L21/31116
    • We have discovered a method for plasma etching a carbon-containing silicon oxide film which provides excellent etch profile control, a rapid etch rate of the carbon/containing silicon oxide film, and high selectivity for etching the carbon-containing silicon oxide film preferentially to an overlying photoresist masking material. Then the method of the inention is used, a highter carbon content in the carbon/containing silicon oxide film results in a faster etch rate, at least up to ta carbon content of 20 atomic percent. In particular, the carbon-containgin silicon oxide film results in a faster etch rate, at least up to a carbon content of 20 atomic percent. In particular, the carbon containg silicon oxide film is plama etched using a plama generated from source gas comprising NH3 and CxFy. It is necessary to achieve the proper balance between the relative amounts of NH3 and CxFy in the plasma source gas in order to provide a balance between etch by/product polymer deposition and removal on various surfaces of the substrate being etched. The NH3 gas functions to "clean up" deposited polzmer on the photoresist surface, on the etched surface, and on process chamber surfaces. The atomic ratio of carbon: nitrogen in the plasma source gas typically ranges from about 0.3:1 to about 3:1. We have found that C2F6 and C4F8 provide excellent etch rates during etching of carbon-containing silicon oxide films.
    • 我们已经发现了一种用于等离子体蚀刻含碳氧化硅膜的方法,该方法提供了优异的蚀刻分布控制,含碳/氧化硅膜的快速蚀刻速率和用于将含碳氧化硅膜优先蚀刻成 覆盖光刻胶掩模材料。 然后使用该方法,含碳氧化硅膜中较高的碳含量导致较快的蚀刻速率,至少达到20原子百分比的ta含碳量。 特别地,含碳的氧化硅膜导致更快的蚀刻速率,至少达到20原子百分比的碳含量。 具体而言,使用由包含NH 3和C x F y的源气体产生的气泡对含碳的氧化硅膜进行蚀刻。 有必要在等离子体源气体中的NH 3和C x F y的相对量之间达到适当的平衡,以便在蚀刻/产物聚合物沉积和去除被蚀刻衬底的各种表面之间提供平衡。 NH3气体的作用是“清理”光致抗蚀剂表面,蚀刻表面上和工艺室表面上沉积的抛光剂。 等离子体源气体中碳:氮的原子比通常在约0.3:1至约3:1的范围内。 我们发现C2F6和C4F8在含碳氧化硅膜的蚀刻过程中提供了优异的蚀刻速率。
    • 10. 发明申请
    • NH3 PLASMA DESCUMMING AND RESIST STRIPPING IN SEMICONDUCTOR APPLICATIONS
    • NH3等离子体在半导体应用中的去除和电阻剥离
    • WO0211193A2
    • 2002-02-07
    • PCT/US0123992
    • 2001-07-31
    • APPLIED MATERIALS INC
    • HSIEH CHANG LINCHEN HUIYUAN JIEYE YAN
    • G03F7/40G03F7/42H01L21/027H01L21/3065H01L21/311B08B7/00
    • H01L21/31138G03F7/427
    • In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor susbtrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlaying layer of an organic dielectric.
    • 通常,本公开涉及用于从半导体结构上的位置去除光致抗蚀剂的方法,其中其存在是不期望的。 在一个实施例中,公开了一种从光刻胶图形化之后不希望的区域去除残余光致抗蚀剂材料的方法。 在另一个实施例中,从半导体芯片表面剥离未对准的图案化光刻胶。 特别地,该方法包括将半导体结构暴露于由包含NH 3的源气体产生的等离子体。 为了产生各向异性蚀刻,在两种方法中都采用基板电压。 在除尘实施例中,维持图案化光致抗蚀剂的临界尺寸。 在光致抗蚀剂剥离实施例中,去除图案化的光致抗蚀剂,而不会有害地影响有机电介质的部分暴露的底层。