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1. 发明申请

WO2011159615A3 METHOD AND APPARATUS FOR INDUCING TURBULENT FLOW OF A PROCESSING CHAMBER CLEANING GAS 审中-公开
标题翻译：用于诱导加工室清洁气体的涡流的方法和装置
公开(公告)号：WO2011159615A3
公开(公告)日：2012-04-19
申请号：PCT/US2011040197
申请日：2011-06-13
申请人： APPLIED MATERIALS INC , CHUNG HUA , DONG XIZI , MAUNG KYAWWIN , HANAWA HIROJI , KANG SANG WON , QUACH DAVID H , OLGADO DONALD J K , BOUR DAVID , HSU WEI-YUNG , TAM ALEXANDER , CHANG ANZHONG , ACHARYA SUMEDH
发明人： CHUNG HUA , DONG XIZI , MAUNG KYAWWIN , HANAWA HIROJI , KANG SANG WON , QUACH DAVID H , OLGADO DONALD J K , BOUR DAVID , HSU WEI-YUNG , TAM ALEXANDER , CHANG ANZHONG , ACHARYA SUMEDH
IPC分类号： H01L21/205 , H01L21/302
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

2. 发明申请

WO2012024033A3 SHOWERHEAD ASSEMBLY WITH GAS INJECTION DISTRIBUTION DEVICES 审中-公开
标题翻译：淋浴器组装与气体注射分配装置
公开(公告)号：WO2012024033A3
公开(公告)日：2012-04-12
申请号：PCT/US2011043577
申请日：2011-07-11
申请人： APPLIED MATERIALS INC , TAM ALEXANDER , CHANG ANZHONG , ACHARYA SUMEDH , OLGADO DONALD J K
发明人： TAM ALEXANDER , CHANG ANZHONG , ACHARYA SUMEDH , OLGADO DONALD J K
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/45576
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。该装置包括具有单独的入口和歧管的喷头组件，用于在进入处理体积之前将不同的处理气体输送到室的处理体积而不混合气体。淋浴头包括多个气体分配装置，其设置在多个气体入口内，用于将一个处理气体注入和分配到歧管上，以均匀地输送到腔室的处理容积中。每个气体分配装置优选地具有喷嘴，喷嘴构造成使流过其中的处理气体均匀地分布，同时最小化歧管内的处理气体的再循环。结果，在位于处理室的处理容积中的多个基板上实现了改善的沉积均匀性。

3. 发明申请

WO2011159690A2 MULTIPLE PRECURSOR SHOWERHEAD WITH BY-PASS PORTS 审中-公开
标题翻译：多通道前置放大器带旁路口
公开(公告)号：WO2011159690A2
公开(公告)日：2011-12-22
申请号：PCT/US2011040335
申请日：2011-06-14
申请人： APPLIED MATERIALS INC , TAM ALEXANDER , CHANG ANZHONG , ACHARYA SUMEDH
发明人： TAM ALEXANDER , CHANG ANZHONG , ACHARYA SUMEDH
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/45576
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，该设备包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。在一个实施例中，喷头包括一个或多个清洁气体导管，其构造成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。在一个实施例中，喷头包括多个计量端口，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。结果，与仅通过处理气体通道将清洁气体引入室中相比，可以更有效和有效地清洁处理室部件。

4. 发明申请

WO2011017501A3 CVD APPARATUS 审中-公开
标题翻译： CVD装置
公开(公告)号：WO2011017501A3
公开(公告)日：2011-06-03
申请号：PCT/US2010044521
申请日：2010-08-05
申请人： APPLIED MATERIALS INC , BURROWS BRIAN H , STEVENS RONALD , GRAYSON JACOB , PODESTA JOSHUA J , NIJHAWAN SANDEEP , WASHINGTON LORI D , TAM ALEXANDER , ACHARYA SUMEDH
发明人： BURROWS BRIAN H , STEVENS RONALD , GRAYSON JACOB , PODESTA JOSHUA J , NIJHAWAN SANDEEP , WASHINGTON LORI D , TAM ALEXANDER , ACHARYA SUMEDH
IPC分类号： H01L21/683 , H01L21/205
CPC分类号： H01L21/67115 , C23C16/4412 , C23C16/4584 , C23C16/481 , H01L21/68742 , H01L21/68792
摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.
摘要翻译：本发明的实施例总体上涉及用于在衬底上进行化学气相沉积（CVD）的方法和装置，并且具体地涉及用于金属有机化学气相沉积的处理室和部件。该设备包括限定处理空间的腔室主体。在第一平面中的喷头限定了处理空间的顶部。承载板在第二平面上横跨处理空间延伸，从而在喷头和基座板之间形成上处理空间。在第三平面中的透明材料限定处理空间的底部部分，从而在承载板和透明材料之间形成较低的处理空间。多个灯形成位于透明材料下方的一个或多个区域。该设备提供均匀的前体流动和混合，同时在较大的基材上保持均匀的温度，从而产生吞吐量的相应增加。

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