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1. 发明申请

WO02103742A2 PLASMA DISPLAY PANEL WITH A LOW K DIELECTRIC LAYER 审中-公开
标题翻译：具有低K介质层的等离子体显示面板
公开(公告)号：WO02103742A2
公开(公告)日：2002-12-27
申请号：PCT/US0219559
申请日：2002-06-18
申请人： APPLIED MATERIALS INC
发明人： LAW KAM S , SHANG QUANYUAN , TAKEHARA TAKAKO , WON TAEKYUNG , HARSHBARGER WILLIAM R , MAYDAN DAN
IPC分类号： H01J9/02 , H01J11/12 , H01J11/38 , H01J17/04 , H01J17/49
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
摘要翻译：包括低k电介质层的等离子体显示面板。在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。在另一个实施例中，电介质层包括Black Diamond TM层。在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

2. 发明申请

WO0219363A3 PRE-POLYCOATING OF GLASS SUBSTRATES 审中-公开
标题翻译：玻璃基材的预聚物
公开(公告)号：WO0219363A3
公开(公告)日：2003-08-28
申请号：PCT/US0126668
申请日：2001-08-27
申请人： APPLIED MATERIALS INC
发明人： LAW KAM S , MAYDAN DAN
IPC分类号： C03B25/02 , C03C17/22 , C03C17/245 , C03C17/34 , C23C16/24 , H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： C03C17/3482 , C03C17/22 , C03C17/3435 , C03C2217/282 , C03C2218/153 , H01J2209/012 , H01J2329/8605
摘要： A method and apparatus for forming a polysilicon layer on a pre-annealed glass substrate. In one aspect, the method includes loading a pre-annealed glass substrate in a deposition chamber, depositing an amorphous silicon layer on the pre-annealed glass substrate, and annealing the pre-annealed glass substrate to form a polysilicon layer thereon. The amorphous silicon layer may be deposited concurrently with the annealing step to produce the polysilicon layer on the pre-annealed glass substrate. A nitride layer and/or an oxide layer may be deposited prior to depositing the amorphous silicon layer and annealing the pre-annealed glass substrate.
摘要翻译：一种用于在预退火玻璃基板上形成多晶硅层的方法和装置。一方面，该方法包括将预退火的玻璃基板加载到沉积室中，在预退火玻璃基板上沉积非晶硅层，以及退火预退火玻璃基板以在其上形成多晶硅层。可以与退火步骤同时沉积非晶硅层，以在预退火玻璃基板上产生多晶硅层。可以在沉积非晶硅层并退火预退火的玻璃基板之前沉积氮化物层和/或氧化物层。

3. 发明申请

WO0248766A3 LARGE AREA OPTICAL INTEGRATED CIRCUITS 审中-公开
标题翻译：大面积光学集成电路
公开(公告)号：WO0248766A3
公开(公告)日：2003-04-10
申请号：PCT/US0147493
申请日：2001-12-06
申请人： APPLIED MATERIALS INC
发明人： MAK CECILIA Y , WHITE JOHN M , LAW KAM S , MAYDAN DAN
IPC分类号： G02B6/12 , G02B6/13 , G02B6/132
CPC分类号： G02B6/12004 , G02B6/13 , G02B6/132
摘要： In one aspect, the invention provides methods and apparatus for forming optical devices on large area substrates. The large area substrates are preferably made of quartz, silica or fused silica. The large area substrates enable larger optical devices to be formed on a single die. In another aspect, the invention provides methods and apparatus for forming integrated optical devices on large area substrates, such as quartz, silica or fused silica substrates. In another aspect, the invention provides methods and apparatus for forming optical devices using damascene techniques on large area substrates or silicon substrates. In another aspect, methods for forming optical devices by bonding an upper cladding layer on a lower cladding and a core is provided.
摘要翻译：一方面，本发明提供了用于在大面积基板上形成光学器件的方法和装置。大面积基板优选由石英，二氧化硅或熔融二氧化硅制成。大面积基板使得能够在单个管芯上形成较大的光学器件。另一方面，本发明提供了用于在大面积衬底（例如石英，二氧化硅或熔融二氧化硅衬底）上形成集成光学器件的方法和装置。在另一方面，本发明提供了使用大面积衬底或硅衬底上的镶嵌技术形成光学器件的方法和装置。在另一方面，提供了通过将下包层和芯上的上包层结合来形成光器件的方法。

4. 发明申请

WO0250334A2 ON-SITE CLEANING GAS GENERATION FOR PROCESS CHAMBER CLEANING 审中-公开
标题翻译：用于加工室清洁的现场清洁气体产生
公开(公告)号：WO0250334A2
公开(公告)日：2002-06-27
申请号：PCT/US0147895
申请日：2001-12-10
申请人： APPLIED MATERIALS INC
发明人： SHANG QUANYUAN , HARSHBARGER WILLIAM R , YADAV SANJAY , LAW KAM S
IPC分类号： C23C16/44 , B08B9/08 , H01L21/00
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryocondensation.
摘要翻译：本文提供了一种用于清洁用于半导体和/或平板显示器制造的处理室的方法。该方法包括以下步骤：将非清洁进料气体转化为远处的清洁气体，然后将清洁气体输送至处理室进行清洁。这种方法可以进一步包括在将气体输送到腔室之前激活腔室外部的清洁气体的步骤。还提供了通过低温冷凝从清洁气体中除去非清洁进料气体的方法。

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