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1. 发明申请

WO2009129391A2 LOW TEMPERATURE THIN FILM TRANSISTOR PROCESS, DEVICE PROPERTY, AND DEVICE STABILITY IMPROVEMENT 审中-公开
标题翻译：低温薄膜晶体管工艺，器件性能和器件稳定性改进
公开(公告)号：WO2009129391A2
公开(公告)日：2009-10-22
申请号：PCT/US2009/040811
申请日：2009-04-16
申请人： APPLIED MATERIALS, INC. , YANG, Ya-Tang , PARK, Beom Soo , WON, Tae Kyung , CHOI, Soo Young , WHITE, John, M.
发明人： YANG, Ya-Tang , PARK, Beom Soo , WON, Tae Kyung , CHOI, Soo Young , WHITE, John, M.
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
摘要翻译：提供一种用于形成薄膜晶体管的方法和装置。形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。在一些实施例中，第一介电层是富硅的氮化硅层。形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

2. 发明申请

WO2012092020A3 THIN FILM DEPOSITION USING MICROWAVE PLASMA 审中-公开
公开(公告)号：WO2012092020A3
公开(公告)日：2012-07-05
申请号：PCT/US2011/066124
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , NOMINANDA, Helinda , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef
发明人： WON, Tae Kyung , NOMINANDA, Helinda , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef
IPC分类号： H01L21/205
摘要： Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm 2 to about 5,000 milliWatts/cm 2 at a frequency of about 1 GHz to about 10 GHz.

3. 发明申请

WO2008154446A2 AN APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于沉积均匀硅膜的装置及其制造方法
公开(公告)号：WO2008154446A2
公开(公告)日：2008-12-18
申请号：PCT/US2008/066210
申请日：2008-06-06
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , WON, Tae Kyung , PARK, Beom Soo , WHITE, John M.
发明人： CHOI, Soo Young , WON, Tae Kyung , PARK, Beom Soo , WHITE, John M.
IPC分类号： B05D5/12 , C23C16/00
CPC分类号： C23C16/45565 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.
摘要翻译：提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中并被配置为在其上支撑四边形衬底的衬底支撑件，以及布置在衬底支撑件上方的处理室中的气体分配板其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

4. 发明申请

WO2013169559A1 SIOX PROCESS CHEMISTRY DEVELOPMENT USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：使用微波等离子体化学气相沉积的SIOX工艺化学发展
公开(公告)号：WO2013169559A1
公开(公告)日：2013-11-14
申请号：PCT/US2013/039341
申请日：2013-05-02
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
发明人： WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400°C, flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，将包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，向微波功率施加微波功率从反应气体产生微波等离子体，并在衬底的暴露表面的至少一部分上沉积氧化硅层。

5. 发明申请

WO2010111286A3 HIGH TEMPERATURE THIN FILM TRANSISTOR ON SODA LIME GLASS 审中-公开
公开(公告)号：WO2010111286A3
公开(公告)日：2010-09-30
申请号：PCT/US2010/028341
申请日：2010-03-23
申请人： APPLIED MATERIALS, INC. , YANG, Ya-Tang , PARK, Beom Soo , WON, Tae K. , CHOI, Soo Young
发明人： YANG, Ya-Tang , PARK, Beom Soo , WON, Tae K. , CHOI, Soo Young
IPC分类号： H01L29/786 , H01L21/205
摘要： The present invention generally comprises a low cost TFT and a method of manufacturing a TFT. For TFTs, soda lime glass would be an attractive alternative to non-alkali glass, but a soda lime glass substrate will permit sodium to diffuse into the active layer and degrade the performance of the TFT. Substrates comprising a polyimide, because they are flexible, would also be attractive to utilize instead of non-alkali glass substrates, but the plastic substrates permit carbon to diffuse into the active layer. By depositing a silicon oxynitride adhesion layer over the soda lime glass substrate and a silicon rich barrier layer over the adhesion layer, diffusion may be reduced and deposition may occur at high temperatures. Thus, a lower cost TFT may be produced with a soda lime glass substrate or a substrate comprising a polyimide as compared to a non-alkali glass substrate.

6. 发明申请

WO2013123431A1 METHOD FOR DEPOSITING AN ENCAPSULATING FILM 审中-公开
标题翻译：沉积膜的方法
公开(公告)号：WO2013123431A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/026492
申请日：2013-02-15
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
发明人： CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
IPC分类号： H01L51/56 , H05B33/10 , H05B33/04
CPC分类号： H01L51/5256 , C23C16/26 , C23C16/345
摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.
摘要翻译：描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。在其他实施例中，有机介电层夹在无机封装层之间。

7. 发明申请

WO2008079742A2 PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL 审中-公开
标题翻译：防止PECVD工艺室壁上的膜沉积
公开(公告)号：WO2008079742A2
公开(公告)日：2008-07-03
申请号：PCT/US2007/087597
申请日：2007-12-14
申请人： APPLIED MATERIALS, INC. , WHITE, John, M. , PARK, Beom Soo , TINER, Robin, L. , CHOI, Soo Young
发明人： WHITE, John, M. , PARK, Beom Soo , TINER, Robin, L. , CHOI, Soo Young
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/4585 , C23C16/4586 , H01J37/32495 , H01J37/32623
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的衬底支撑件设置在腔室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与室底部耦合。至少一个延伸杆沿支撑体的周边边缘定位。该方法包括提供具有狭缝阀和基板支撑件的处理腔室，向设置在基板支撑件上方的分配板提供RF功率，使气体流过分配板，等离子体处理设置在基板支撑件上的基板，并且减少产生与狭缝阀相邻的等离子体。

8. 发明申请

WO2013040127A2 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线型大面积等离子体反应器中均匀处理的气体输送与分配
公开(公告)号：WO2013040127A2
公开(公告)日：2013-03-21
申请号：PCT/US2012/055009
申请日：2012-09-13
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef , SORENSEN, Carl A. , WON, Tae K. , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , JOHNSTON, Benjamin M.
发明人： WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef , SORENSEN, Carl A. , WON, Tae K. , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , JOHNSTON, Benjamin M.
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：用于将气体引入处理室的设备包括一个或多个气体分配管，所述气体分配管具有尺寸更大，数量更多和/ 气体引入管，其中气体注入孔需要更大的气体传导。具有较大气体喷射孔的外部管可以围绕每个气体分配管。气体分配管可以流体连接到真空前级管路上，以便于在处理循环结束时从气体分配管中除去气体。

9. 发明申请

WO2009055234A1 OFFSET LINER FOR CHAMBER EVACUATION 审中-公开
标题翻译：用于室内休闲的偏心衬里
公开(公告)号：WO2009055234A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/079053
申请日：2008-10-07
申请人： APPLIED MATERIALS, INC. , TINER, Robin, L. , ANWAR, Suhail , FURUTA, Gaku , CHOI, Young Jin , PARK, Beom Soo , CHOI, Soo Young , WHITE, John, M.
发明人： TINER, Robin, L. , ANWAR, Suhail , FURUTA, Gaku , CHOI, Young Jin , PARK, Beom Soo , CHOI, Soo Young , WHITE, John, M.
IPC分类号： H05H1/34
CPC分类号： H01J37/32357 , C23C16/4404 , H01J37/32449 , H01J37/32623 , H01J37/32834
摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.
摘要翻译：本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

10. 发明申请

WO2013151786A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：WO2013151786A1
公开(公告)日：2013-10-10
申请号：PCT/US2013/032990
申请日：2013-03-19
申请人： APPLIED MATERIALS, INC. , WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
发明人： WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
IPC分类号： H01L21/205
CPC分类号： C23C14/042 , C23C16/042
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

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