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1. 发明申请

WO2020139498A1 METHODS FOR FORMING MICROWAVE TUNABLE COMPOSITED THIN-FILM DIELECTRIC LAYER 审中-公开
公开(公告)号：WO2020139498A1
公开(公告)日：2020-07-02
申请号：PCT/US2019/062934
申请日：2019-11-25
申请人： APPLIED MATERIALS, INC.
发明人： OW, Yueh Sheng , CUI, Yue , SUNDARRAJAN, Arvind , CHEN, Nuno Yen-Chu , SEE, Guan Huei , DENG, Felix
IPC分类号： H01L21/02 , H01L21/3205 , H01L21/324 , H05H1/46 , H01J37/32
摘要： Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.

2. 发明申请

WO2019221975A1 METHODS AND APPARATUS FOR CLEAVING OF SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：WO2019221975A1
公开(公告)日：2019-11-21
申请号：PCT/US2019/031120
申请日：2019-05-07
申请人： APPLIED MATERIALS, INC.
发明人： DENG, Felix , OW, Yueh Sheng , KOH, Tuck Foong , CHEN, Nuno Yen-Chu , WADA, Yuichi , KESAPRAGADA, Sree Rangasai V. , GOH, Clinton
IPC分类号： H01L21/78 , H01L21/76 , H01L21/324 , H01L21/67
摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

3. 发明申请

WO2021216557A1 METHODS AND APPARATUS FOR REDUCING DEFECTS IN PRECLEAN CHAMBERS 审中-公开
公开(公告)号：WO2021216557A1
公开(公告)日：2021-10-28
申请号：PCT/US2021/028168
申请日：2021-04-20
申请人： APPLIED MATERIALS, INC.
发明人： OW, Yueh Sheng , WADA, Yuichi , WEI, Junqi , ZHANG, Kang , JUPUDI, Ananthkrishna , BABU, Sarath , TEO, Kok Seong , TAN, Kok Wei
IPC分类号： H01L21/67 , H01J37/32
摘要： Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

4. 发明申请

WO2021034354A1 METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE USING NON-CONTACT TEMPERATURE MEASUREMENT 审中-公开
公开(公告)号：WO2021034354A1
公开(公告)日：2021-02-25
申请号：PCT/US2020/030741
申请日：2020-04-30
申请人： APPLIED MATERIALS, INC.
发明人： RAMACHANDRAN, Vinodh , JUPUDI, Ananthkrishna , TSAI, Cheng-Hsiung , OW, Yueh Sheng , RAO, Preetham P. , GAUTAM, Ribhu , AGARWAL, Prashant
IPC分类号： H01L21/67 , G01J5/00
摘要： Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.

5. 发明申请

WO2020242804A1 INLINE MICROWAVE BATCH DEGAS CHAMBER 审中-公开
公开(公告)号：WO2020242804A1
公开(公告)日：2020-12-03
申请号：PCT/US2020/033443
申请日：2020-05-18
申请人： APPLIED MATERIALS, INC.
发明人： GAUTAM, Ribhu , JUPUDI, Ananthkrishna , KOH, Tuck Foong , RAO, Preetham P. , RAMACHANDRAN, Vinodh , OW, Yueh Sheng , WADA, Yuichi , TSAI, Cheng-Hsiung , LIEW, Kai Liang
IPC分类号： H01L21/67 , H05B6/64
摘要： Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

6. 发明申请

WO2021216445A1 PRECLEAN CHAMBER UPPER SHIELD WITH SHOWERHEAD 审中-公开
公开(公告)号：WO2021216445A1
公开(公告)日：2021-10-28
申请号：PCT/US2021/027957
申请日：2021-04-19
申请人： APPLIED MATERIALS, INC.
发明人： BABU, Sarath , JUPUDI, Ananthkrishna , OW, Yueh Sheng , WEI, Junqi , BOH, Kelvin Tai Ming , ZHANG, Kang , WADA, Yuichi
IPC分类号： H01J37/32 , H01L21/683 , C23C14/02
摘要： Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

7. 发明申请

WO2021007105A1 METHODS AND APPARATUS FOR MICROWAVE PROCESSING OF POLYMER MATERIALS 审中-公开
公开(公告)号：WO2021007105A1
公开(公告)日：2021-01-14
申请号：PCT/US2020/040708
申请日：2020-07-02
申请人： APPLIED MATERIALS, INC.
发明人： KOH, Tuck Foong , HSIUNG, Chien Kang , OW, Yueh Sheng , DENG, Felix , CUI, Yue , CHEN, Nuno Yen-Chu , JUPUDI, Ananthkrishna , GOH, Clinton , RAMACHANDRAN, Vinodh
IPC分类号： H01L21/02 , H01L21/67 , H05B6/64
摘要： Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.

8. 发明申请

WO2016060837A1 APPARATUS FOR HIGH COMPRESSIVE STRESS FILM DEPOSITION TO IMPROVE KIT LIFE 审中-公开
标题翻译：用于高压应力膜沉积的装置，以改善药盒生命
公开(公告)号：WO2016060837A1
公开(公告)日：2016-04-21
申请号：PCT/US2015/052803
申请日：2015-09-29
申请人： APPLIED MATERIALS, INC.
发明人： WEI, Junqi , SAVANDAIAH, Kirankumar , JUPUDI, Ananthkrishna , CAO, Zhitao , OW, Yueh Sheng
IPC分类号： H01L21/203 , H01L21/67 , H01L21/683
CPC分类号： H01J37/3288 , H01J37/32477 , H01J37/32623 , H01J37/32642
摘要： Methods and apparatus for extending processing lifetimes of process kit components are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.
摘要翻译：公开了用于延长处理套件组件的处理寿命的方法和装置。在一些实施例中，处理套件包括：第一环，其具有限定内径的内壁，限定外径的外壁，内壁和外壁之间的上表面，以及位于内壁和内壁之间的相对的下表面和所述外壁，其中所述上表面的靠近所述内壁的第一部分是凹形的，并且其中所述上表面的第二部分水平地延伸离开所述第一部分; 以及具有上表面和相对的下表面的第二环，其中所述下表面的第一部分构造成搁置在所述第一环的所述第二部分上，其中所述下表面的第二部分是凸的并延伸到不接触第一环的上表面的凹形第一部分。

9. 发明申请

WO2015026445A1 VARIABLE FREQUENCY MICROWAVE (VFM) PROCESSES AND APPLICATIONS IN SEMICONDUCTOR THIN FILM FABRICATIONS 审中-公开
标题翻译：可变频率微波（VFM）在半导体薄膜制造中的应用
公开(公告)号：WO2015026445A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/045212
申请日：2014-07-02
申请人： APPLIED MATERIALS, INC.
发明人： CHANG, Ke , OW, Yueh Sheng , WONG, Loke, Yuen , JUPUDI, Ananthkrishna , MORI, Glen, T. , KITOWSKI, Aksel , BARMAN, Arkajit Roy
IPC分类号： H01L21/268 , H01L21/324
CPC分类号： H01L21/02345 , C23C14/22 , C23C16/46 , C23C16/511 , H01L21/02118 , H01L21/02266 , H01L21/0234 , H01L21/31058 , H01L21/67115
摘要： Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increase quality and speed of the degas process without damaging the various components.
摘要翻译：本文描述了用于处理衬底的方法和设备。真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。

10. 发明申请

WO2021091684A1 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
公开(公告)号：WO2021091684A1
公开(公告)日：2021-05-14
申请号：PCT/US2020/056267
申请日：2020-10-19
申请人： APPLIED MATERIALS, INC.
发明人： OW, Yueh Sheng , WADA, Yuichi , WEI, Junqi , ZHANG, Kang , BOH, Kelvin
IPC分类号： H01L23/00 , H01L21/768 , C23C14/04 , C23C14/02 , C23C14/14 , C23C14/34 , C23C14/56
摘要： Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

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