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1. 发明申请

WO2022119983A1 ALL-IN-ONE BIOREACTOR FOR THERAPEUTIC CELLS MANUFACTURING 审中-公开
公开(公告)号：WO2022119983A1
公开(公告)日：2022-06-09
申请号：PCT/US2021/061495
申请日：2021-12-01
申请人： APPLIED MATERIALS, INC.
发明人： BANNA, Samer , SOWWAN, Mukhles , DICKERSON, Gary E.
IPC分类号： C12M1/26 , C12M1/12 , C12M1/00
摘要： Methods and apparatus of bioreactors for therapeutic cells manufacturing are provided herein. In some embodiments, a bioreactor includes: an upper bioreactor reservoir configured to perform multiple cell therapy manufacturing process steps including genetic modification and expansion to a plurality of cells disposed therein, wherein the upper bioreactor reservoir includes a plurality of ports for delivering fluids into and out of the upper bioreactor reservoir; a lower bioreactor compartment configured to hold a suspension comprising a molecular species; and a membrane disposed between the lower bioreactor compartment and the upper bioreactor reservoir, wherein the membrane includes a plurality of micro-straws extending through the membrane and into the upper bioreactor reservoir to transfect the plurality of cells with the molecular species.

2. 发明申请

WO2022087508A1 AUTOMATED CLOSED SYSTEM FOR CELL THERAPY MANUFACTURING 审中-公开
公开(公告)号：WO2022087508A1
公开(公告)日：2022-04-28
申请号：PCT/US2021/056380
申请日：2021-10-23
申请人： APPLIED MATERIALS, INC.
发明人： SOWWAN, Mukhles , BANNA, Samer
IPC分类号： C12M1/36 , C12M1/00 , C12M1/42 , C12M1/12 , C12M1/34 , C12N5/0783
摘要： Embodiments of automated closed apparatus for cell therapy manufacturing are provided herein. In some embodiments, an automated closed apparatus for cell therapy manufacturing includes: a master device having a master controller for processing control programs for a variety of cell types; an input device fluidly coupled to the master device, wherein the input device is configured to feed an initial plurality of cells to the master device; one or more auxiliary devices each configured to perform one or more cell therapy manufacturing steps to the initial plurality of cells to form a final plurality of cells; and an output device coupled to the master device configured to collect the final plurality of cells from the master device.

3. 发明申请

WO2020076719A1 ADVANCED SEMICONDUCTOR PROCESS OPTIMIZATION AND ADAPTIVE CONTROL DURING MANUFACTURING 审中-公开
公开(公告)号：WO2020076719A1
公开(公告)日：2020-04-16
申请号：PCT/US2019/055031
申请日：2019-10-07
申请人： APPLIED MATERIALS, INC.
发明人： BANNA, Samer , CANTWELL, Dermot , BISHARA, Waheb , ENGEL, Lior
IPC分类号： G05B13/04 , G05B19/418 , H01L21/67
摘要： A spatial model is built to predict performance of a processing chamber. The spatial model is used to converge faster to a desired process during the process development phase. A system for controlling device performance variability during manufacturing includes a process platform, on-board metrology (OBM) tools, and a machine-learning based process control model. The system receives SEM metrology data, and updates the process control model periodically (e.g., wafer-to-wafer, lot-to-lot, chamber-to-chamber etc.) using machine learning techniques. Periodic update of the process control model may account for chamber-to-chamber variability.

4. 发明申请

WO2017173129A1 METROLOGY SYSTEM FOR SUBSTRATE DEFORMATION MEASUREMENT 审中-公开
标题翻译：用于基底变形测量的计量系统
公开(公告)号：WO2017173129A1
公开(公告)日：2017-10-05
申请号：PCT/US2017/025112
申请日：2017-03-30
申请人： APPLIED MATERIALS, INC.
发明人： VAEZ-IRAVANI, Mehdi , EGAN, Todd , BANNA, Samer , TANTIWONG, Kyle
IPC分类号： H01L21/66
CPC分类号： H01L21/67288 , G01B11/24 , G01B11/306 , G01N21/956 , G01N2021/95615 , G06T7/001 , G06T2207/30148 , H01L22/12
摘要： Embodiments of the disclosure provide methods and system for inspecting and treating a substrate. In one embodiment, a method is provided including transmitting a first plurality of beams from a diffractive beam splitter to a first surface of a substrate to generate a reflection of a second plurality of beams, wherein the first plurality of beams are spaced apart from each other upon arriving at the first surface of the substrate; receiving the second plurality of beams on a recording surface of an optical device, wherein the second plurality of beams are spaced apart from each other upon arriving at the recording surface; measuring positional information of the second plurality of beams on the recording surface; comparing the positional information of the second plurality of beams to positional information stored in a memory; and storing a result of the comparison in the memory.
摘要翻译：本公开的实施例提供了用于检查和处理基板的方法和系统。在一个实施例中，提供了一种方法，包括将第一多个光束从衍射分束器发射到衬底的第一表面以产生第二多个光束的反射，其中第一多个光束彼此间隔开在到达衬底的第一表面时; 在光学装置的记录表面上接收所述第二多个光束，其中所述第二多个光束在到达所述记录表面时彼此间隔开; 测量记录表面上的第二多个光束的位置信息; 将第二多个光束的位置信息与存储在存储器中的位置信息进行比较; 并将比较结果存储在存储器中。

5. 发明申请

WO2014149200A1 PLASMA REACTOR WITH HIGHLY SYMMETRICAL FOUR-FOLD GAS INJECTION 审中-公开
标题翻译：具有高对称四折注射气体的等离子体反应器
公开(公告)号：WO2014149200A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/014391
申请日：2014-02-03
申请人： APPLIED MATERIALS, INC.
发明人： ROZENZON, Yan , TANTIWONG, Kyle , YOUSIF, Imad , KNYAZIK, Vladimir , BANNA, Samer
IPC分类号： H05H1/34 , H05H1/24
CPC分类号： H01J37/3244 , C23C16/45561 , C23C16/45578 , C23C16/4558 , H01J37/32082
摘要： An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.
摘要翻译：等离子体反应器的环形盖板具有上层和下层的气体分配通道，该气体分配通道沿着从气体供应管线到天花板气体喷嘴的相应气体分配通道的等长路径分配气体。

6. 发明申请

WO2018208959A1 FLEXIBLE MODE SCANNING OPTICAL MICROSCOPY AND INSPECTION SYSTEM 审中-公开
公开(公告)号：WO2018208959A1
公开(公告)日：2018-11-15
申请号：PCT/US2018/031863
申请日：2018-05-09
申请人： APPLIED MATERIALS, INC.
发明人： BANNA, Samer , WU, Dong , VAEZ-IRAVANI, Medhi , BISHARA, Waheb
IPC分类号： G01N21/88 , G01N21/47 , G02B21/08
摘要： A method for flexible inspection of a sample includes forming an input beam using a beam source, blocking a portion of the input beam using an input mask, and forming a shaped beam from a portion of the input beam. The shaped beam is received at a first portion of an objective lens and focused onto a sample. A reflected beam is collected at a second portion of the objective lens. Scattered light is collected at the first and second portions of the objective lens and at a third portion of the objective lens. The scattered light is received at a dark-field detector module and a portion of the scattered light is directed to a dark-field detector. The dark-field detector module includes an output mask having one or more output apertures that allow at least part of the scattered light that passes through the third portion of the object lens to pass as the portion of the scattered light that is directed to the dark-field detector.

7. 发明申请

WO2014116488A1 SKEW ELIMINATION AND CONTROL IN A PLASMA ENHANCED SUBSTRATE PROCESSING CHAMBER 审中-公开
标题翻译：等离子体增强基板加工室中的消除和控制
公开(公告)号：WO2014116488A1
公开(公告)日：2014-07-31
申请号：PCT/US2014/011751
申请日：2014-01-16
申请人： APPLIED MATERIALS, INC.
发明人： BANNA, Samer , BISHARA, Waheb , GARCIA DE GORORDO, Alvaro , GUNG, Tza-Jing
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/321 , H01J37/32651 , H01J37/3266 , H01J37/32669
摘要： Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; one or more inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and one or more first electromagnets to form a first static magnetic field that is substantially vertical in direction and axisymmetric about a central processing axis of the process chamber, and having a magnitude of about 2 to about 10 gauss within the processing volume proximate the lid.
摘要翻译：本文提供了等离子体增强基板处理的方法和装置。在一些实施例中，一种用于处理衬底的装置包括：处理室，其具有设置在处理室的电介质盖下方的内部处理容积; 设置在所述处理室中的基板支撑件; 设置在电介质盖上方的一个或多个感应线圈以将RF能量感应地耦合到衬底支撑件上方的处理容积中; 以及一个或多个第一电磁体，以形成在处理室的中心处理轴线方向上基本上垂直且轴对称的第一静磁场，并且在接近盖子的处理容积内具有约2至约10高斯的大小。

8. 发明申请

WO2014116392A1 ELECTROSTATIC CHUCK WITH CONCENTRIC COOLING BASE 审中-公开
标题翻译：具有集中冷却基座的静电卡盘
公开(公告)号：WO2014116392A1
公开(公告)日：2014-07-31
申请号：PCT/US2013/078244
申请日：2013-12-30
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , TANTIWONG, Kyle , BANNA, Samer
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01L21/67 , H01L21/67098
摘要： Embodiments of the present disclosure generally provide apparatus and method for cooling a substrate support in a uniform manner. One embodiment of the present disclosure provides a cooling assembly for a substrate support. The cooling assembly includes a cooling base having a first side for contacting the substrate support and providing cooling to the substrate support, a diffuser disposed on a second side of the cooling base, wherein the diffuser defines a plurality of cooling paths for delivering a cooling fluid towards the cooling base in a parallel manner, and an inlet/outlet plate disposed under the diffuser, wherein the inlet/outlet plate is provides an interface between the diffuser and an inlet and outlet of a cooling fluid.
摘要翻译：本公开的实施例通常提供用于以均匀方式冷却衬底支撑件的装置和方法。本公开的一个实施例提供了一种用于衬底支撑件的冷却组件。所述冷却组件包括冷却基座，所述冷却基座具有用于接触所述基板支撑件并且向所述基板支撑件提供冷却的第一侧，设置在所述冷却基座的第二侧上的扩散器，其中所述扩散器限定多个用于输送冷却流体的冷却路径以平行方式朝向冷却基座，以及设置在扩散器下方的入口/出口板，其中入口/出口板提供扩散器与冷却流体的入口和出口之间的界面。

9. 发明申请

WO2013163220A1 ELECTROSTATIC CHUCK WITH ADVANCED RF AND TEMPERATURE UNIFORMITY 审中-公开
标题翻译：具有高级射频和温度均匀性的静电卡盘
公开(公告)号：WO2013163220A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/037849
申请日：2013-04-23
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , SUN, Jennifer , MARKOVSKY, Mark , MAKHRATCHEV, Konstantin , BUCHBERGER, Douglas A. Jr. , BANNA, Samer
IPC分类号： H01L21/683 , H01L21/205 , H01L21/306 , C23C16/46 , H02N13/00
CPC分类号： H02N13/00 , H01L21/67103
摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.
摘要翻译：描述了具有RF和温度均匀性的静电卡盘（ESCs）。例如，ESC包括顶部电介质层。上部金属部分设置在顶部电介质层的下方。第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。多个通孔设置在第三电介质层中。总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。金属基底设置在第四电介质层的下方。金属基座包括容纳在其中的多个高功率加热器元件。

10. 发明申请

WO2010102125A3 INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：WO2010102125A3
公开(公告)日：2010-09-10
申请号：PCT/US2010/026237
申请日：2010-03-04
申请人： APPLIED MATERIALS, INC. , BANNA, Samer , TODOROW, Valentin N.
发明人： BANNA, Samer , TODOROW, Valentin N.
IPC分类号： H05H1/36 , H01L21/3065
摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

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