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1. 发明申请

WO2019224150A1 FILTER FOR REDUCING OPTICAL CROSS-TALK 审中-公开
公开(公告)号：WO2019224150A1
公开(公告)日：2019-11-28
申请号：PCT/EP2019/062959
申请日：2019-05-20
申请人： AMS AG
发明人： KROESE, Matt , EILMSTEINER, Gerhard , KRIEBERNEGG, Josef , OPPEL, Desislava
IPC分类号： G01S7/481 , G01S17/02
摘要： An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.

2. 发明申请

WO2019115353A1 METHOD FOR MANUFACTURING A MICROLENS 审中-公开
公开(公告)号：WO2019115353A1
公开(公告)日：2019-06-20
申请号：PCT/EP2018/083824
申请日：2018-12-06
申请人： AMS AG
发明人： EILMSTEINER, Gerhard , BRANDNER, Hannes
IPC分类号： H01L27/146
摘要： A resist layer (2) is applied on a carrier (1), an opening with an overhanging or re-entrant sidewall is formed in the resist layer, the carrier being uncovered in the opening, a lens material (5) is deposited, thus forming a lens (6) on the carrier in the opening, and the resist layer is removed.

3. 发明申请

WO2020025483A1 FILTER ASSEMBLY, DETECTOR, AND METHOD OF MANUFACTURE OF A FILTER ASSEMBLY 审中-公开
公开(公告)号：WO2020025483A1
公开(公告)日：2020-02-06
申请号：PCT/EP2019/070211
申请日：2019-07-26
申请人： AMS AG
发明人： EILMSTEINER, Gerhard , OPPEL, Desislava , MORECROFT, Deborah , HOFRICHTER, Jens
IPC分类号： G01J1/04 , G01J3/12 , G01J3/51 , G01J3/02 , G01T1/20 , G02B5/28
摘要： A filter assembly comprises an incident medium (10), a spacer (30), at least one dielectric filter (50) and an exit medium (70). The spacer (30) is arranged between the incident medium (10) and the at least one dielectric filter (50) such that the incident medium (10) and the at least one dielectric filter (50) are spaced apart by a working distance (32) and thereby enclose a medium of lower index of refraction than the incident medium (10). The at least one dielectric filter (50) is arranged on the exit medium (70).

4. 发明申请

WO2021191304A1 AN INTERFERENCE FILTER, OPTICAL DEVICE AND METHOD OF MANUFACTURING AN INTERFERENCE FILTER 审中-公开
公开(公告)号：WO2021191304A1
公开(公告)日：2021-09-30
申请号：PCT/EP2021/057621
申请日：2021-03-24
申请人： AMS AG
发明人： MORECROFT, Deborah , EILMSTEINER, Gerhard , KOCH, Manuel
IPC分类号： G02B5/28 , G02B5/22 , H04N5/225 , G02B5/285
摘要： An interference filter comprises a substrate, a filter stack and at least one absorption layer. The filter stack comprises alternating layers of optical coatings with different refractive indices arranged on the substrate. The at least one absorption layer is comprised of an optically absorbing material which is arranged on the substrate.

5. 发明申请

WO2017174798A1 SENSOR DEVICE AND METHOD FOR MANUFACTURING A SENSOR DEVICE 审中-公开
标题翻译：传感器装置和用于制造传感器装置的方法
公开(公告)号：WO2017174798A1
公开(公告)日：2017-10-12
申请号：PCT/EP2017/058435
申请日：2017-04-07
申请人： AMS AG
发明人： ROGER, Frederic , EILMSTEINER, Gerhard , DIERSCHKE, Eugene G.
IPC分类号： H01L31/103 , H01L31/18
CPC分类号： H01L31/103 , H01L31/02162 , H01L31/1804 , Y02E10/547
摘要： A sensor device comprises a semiconductor substrate (S) with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well (W1) arranged within the semiconductor substrate (S) and having a second type of electrical conductivity and a second well (W2) arranged at least partially within the first well (W1) and having the first type of electrical conductivity. A doping concentration of the first well (W1) is greater than a doping concentration of the second well (W2) within a surface region at a main surface (MS) of the semiconductor substrate (S). Thereby, a photon capturing layer (PC) having the second type of electrical conductivity is formed at the main surface (MS). A p-n junction (PND) for detecting the incident UV radiation is formed by a boundary between the second well (W2) and the photon capturing layer (PC).
摘要翻译：传感器装置包括具有第一类型导电性并具有用于检测入射UV辐射的光电二极管结构的半导体衬底（S）。该光电二极管结构包括布置在半导体衬底（S）内并具有第二类型导电性的第一阱（W1）和至少部分地布置在第一阱（W1）内并且具有第一类型的导电性。第一阱（W1）的掺杂浓度大于半导体衬底（S）的主表面（MS）处的表面区域内的第二阱（W2）的掺杂浓度。由此，在主表面（MS）处形成具有第二类导电性的光子捕获层（PC）。用于检测入射UV辐射的p-n结（PND）由第二阱（W2）和光子捕获层（PC）之间的边界形成。

6. 发明申请

WO2015018672A1 METHOD OF PRODUCING A RESIST STRUCTURE WITH UNDERCUT SIDEWALL 审中-公开
标题翻译：用底板制造耐腐蚀结构的方法
公开(公告)号：WO2015018672A1
公开(公告)日：2015-02-12
申请号：PCT/EP2014/066081
申请日：2014-07-25
申请人： AMS AG
发明人： EILMSTEINER, Gerhard , HOFFMANN, Raimund
IPC分类号： G03F1/54 , G03F7/16
CPC分类号： G03F7/2022 , G03F1/50 , G03F1/54 , G03F7/168 , G03F7/20 , G03F7/32
摘要： The method comprises the steps of applying a layer of a negative photoresist (2) on a bottom layer (1), providing the layer of the negative photoresist with a pattern arranged in a border zone (4) of the resist structure (3) to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.
摘要翻译：该方法包括以下步骤：在底层（1）上施加负光致抗蚀剂层（2），为负光致抗蚀剂层提供布置在抗蚀剂结构（3）的边界区域（4）中的图案至根据要制造的抗蚀剂结构照射负性光致抗蚀剂层的表面积，并且在照射的表面区域外除去负性光致抗蚀剂层。以这样的方式产生图案，使得其包括小于照射的最小分辨率的尺寸。该图案可以特别地被设计为子分辨率辅助特征。

7. 发明申请

WO2022043448A1 INTERFERENCE FILTER 审中-公开
公开(公告)号：WO2022043448A1
公开(公告)日：2022-03-03
申请号：PCT/EP2021/073631
申请日：2021-08-26
申请人： AMS AG
发明人： PERTL, Patrik , EILMSTEINER, Gerhard
IPC分类号： G02B5/28 , G01J1/04 , G01S17/02 , G01S17/88
摘要： An optical filter (100) and method of manufacturing an optical filter comprising a stack of layers, the stack comprising at least one layer comprising amorphous deuterated silicon (104), and at least layer of a dielectric material (106), wherein within a targeted transmission band the refractive index of the dielectric material is less than a refractive index of the amorphous deuterated silicon (104).

8. 发明申请

WO2022038041A1 METHOD FOR FORMING A LIFT-OFF MASK STRUCTURE 审中-公开
公开(公告)号：WO2022038041A1
公开(公告)日：2022-02-24
申请号：PCT/EP2021/072499
申请日：2021-08-12
申请人： AMS AG
发明人： PERTL, Patrik , EILMSTEINER, Gerhard
IPC分类号： H01L21/027 , H01L21/033
摘要： A method for forming a lift-off mask structure (1) comprises providing a substrate body (10), depositing a layer (11) of bottom anti-reflective coating, BARC, over a surface of the substrate body (10), and depositing a layer (12) of photosensitive resist over the BARC layer (11). The method further comprises exposing the resist layer (12) to electromagnetic radiation (21) through a photomask (20), and forming the lift-off mask structure (1) by applying a developer for selectively removing a portion of the BARC layer (11) and of the resist layer (12) such that an underlying portion of the surface of the substrate body (10) is exposed.

9. 发明申请

WO2021224244A1 SPECTROMETER, PORTABLE DEVICE AND METHOD FOR DETECTING ELECTROMAGNETIC RADIATION 审中-公开
公开(公告)号：WO2021224244A1
公开(公告)日：2021-11-11
申请号：PCT/EP2021/061707
申请日：2021-05-04
申请人： AMS AG
发明人： MORECROFT, Deborah , CASTANO SANCHEZ, Fernando Jesus , HOPPER, Richard , BOUAL, Sophie , EILMSTEINER, Gerhard , SERRANO GOTARREDONA, Rafael , PULKO, Jozef , MEINHARDT, Gerald
IPC分类号： G01J3/02 , G01J3/433
摘要： A spectrometer (10) comprises an emitter (11) that is configured to emit electromagnetic radiation, a sample area (12) that is arranged at an outer face (13) of the spectrometer (10), a modulation unit (14) comprising an electrochromic material, an optical filter (15), an optical detector (16), an integrated circuit (17) that has a main plane of extension, and an optical path for electromagnetic radiation emitted by the emitter (11) towards the optical detector (16) via the sample area (12), the modulation unit (14) and the optical filter (15), wherein the electrochromic material is electrically connected with the integrated circuit (17), and the modulation unit (14) is configured to modulate electromagnetic radiation temporally. Furthermore, a method for detecting electromagnetic radiation is provided.

10. 发明申请

WO2017102312A1 OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE 审中-公开
标题翻译：光学传感装置和制造光学传感装置的方法
公开(公告)号：WO2017102312A1
公开(公告)日：2017-06-22
申请号：PCT/EP2016/079141
申请日：2016-11-29
申请人： AMS AG
发明人： ENICHLMAIR, Hubert , EILMSTEINER, Gerhard
IPC分类号： G01J3/26 , G01J3/28 , G01J3/12 , G02B5/28 , H01L31/00 , H01L27/146 , G01J3/02
CPC分类号： G01J3/26 , G01J3/0259 , G01J3/2803 , G01J2003/1226 , G02B5/285 , H01L27/1446 , H01L31/00
摘要： An optical sensing device comprises a substrate (S1) carrying a first and a second photodetector (S1, S2) and a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises a band-pass filter (BP), a decoupling layer (DL) arranged on the band-pass filter (BP) and a lower dielectric mirror (LM) arranged on the decoupling layer (DL). The filter stack comprises a spacer stack with a primary spacer layer (SP) arranged on the lower dielectric mirror (LM), comprising a first dielectric material and covering the photodetector array. The spacer stack comprises a first spacer layer (S1) comprising the first dielectric material, wherein a first segment of the first spacer layer (S1) is arranged on the primary spacer layer (SP) and covers the second photodetector (P2) but not the first photodetector (P1). The filter stack comprises an upper dielectric mirror (UM) arranged on the spacer stack.
摘要翻译：光学感测装置包括承载第一和第二光电探测器（S1，S2）的衬底（S1）以及布置在衬底上并覆盖光电探测器阵列的滤波器叠层。滤波器叠层包括带通滤波器（BP），布置在带通滤波器（BP）上的去耦层（DL）和布置在去耦层（DL）上的下介电反射镜（LM）。滤光器叠层包括具有布置在下电介质镜（LM）上的主间隔层（SP）的间隔体叠层，其包括第一电介质材料并覆盖光电检测器阵列。所述间隔体堆叠包括包含所述第一电介质材料的第一间隔层（S1），其中所述第一间隔层（S1）的第一段布置在所述主间隔层（SP）上并覆盖所述第二光电检测器（P2），但不覆盖第一光电探测器（P1）。滤光器叠层包括布置在间隔物叠层上的上电介质镜（UM）。

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