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    • 1. 发明申请
    • SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION
    • 半导体光转换结构
    • WO2009158191A2
    • 2009-12-30
    • PCT/US2009/046835
    • 2009-06-10
    • 3M INNOVATIVE PROPERTIES COMPANYZHANG, Jun-YingSMITH, Terry, L.HAASE, Michael, A.
    • ZHANG, Jun-YingSMITH, Terry, L.HAASE, Michael, A.
    • H01L33/00
    • H01L33/44H01L33/08H01L33/502H01L2933/0091
    • Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
    • 公开了半导体光转换结构。 半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层,其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。 结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。 半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。 外涂层具有大于第二折射率的第三折射率。
    • 7. 发明申请
    • STABLE LIGHT SOURCE
    • 稳定的光源
    • WO2010009112A2
    • 2010-01-21
    • PCT/US2009/050523
    • 2009-07-14
    • 3M INNOVATIVE PROPERTIES COMPANYHAASE, Michael, A.THIELEN, James, A.LEATHERDALE, Catherine, A.WEAVER, Billy, L.SMITH, Terry, L.
    • HAASE, Michael, A.THIELEN, James, A.LEATHERDALE, Catherine, A.WEAVER, Billy, L.SMITH, Terry, L.
    • H05B33/0812H01L25/0753H01L33/502H01L33/507H05B33/0857Y02B20/343
    • Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged.
    • 公开了发光系统。 发光系统发出具有第一颜色的输出光。 发光系统包括响应于第一信号而发射第一波长的光的第一电致发光装置。 第一波长基本上与第一信号无关。 发射的第一波长光的强度基本上与第一信号成比例。 该发光系统还包括第一发光元件,该第一发光元件包括第二电致发光装置和第一光转换层。 第二电致发光装置响应于第二信号而发射第二波长的光。 第一光转换层包括半导体势阱,并将第二波长的光的至少一部分转换为比第二波长更长的第三波长的光。 发光系统将第一波长的光与第三波长的光组合以形成第一颜色的输出光。 当第一信号和第二信号中的一个从信号的最大额定值的约50%变化到最大额定值的约100%,但第一信号与第二信号的比率基本保持不变时,输出的第一颜色 光线基本保持不变。