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    • 4. 发明申请
    • 画像表示装置
    • 图像显示
    • WO2004100205A1
    • 2004-11-18
    • PCT/JP2004/005835
    • 2004-04-30
    • 株式会社 東芝小柳津 剛田畑 仁土屋 勇伊藤 武夫
    • 小柳津 剛田畑 仁土屋 勇伊藤 武夫
    • H01J31/12
    • H01J29/28H01J29/327H01J29/94H01J31/123H01J2329/28H01J2329/323H01J2329/946
    • An image display comprising a face plate (6) whose inner surface is provided with a phosphor screen and a rear plate having many electron-emitting devices is disclosed. The phosphor screen comprises a light-absorbing layer (8), a phosphor layer (9), a metal back layer (10) which has a separating portion (10a) and is formed on the phosphor layer, a high-resistance covering layer (11) which is so formed across the separating portion of the metal back layer as to extend over the metal back layer on both sides of the separating portion, a heat-resistant fine particle layer (12) formed on the high-resistance covering layer, and a getter layer (13) which is formed as a film lying over the metal back layer and divided by the heat-resistant fine particle layer. Consequently, by improving heat resistance characteristics, breakage and deterioration of the electron-emitting devices or the phosphor screen due to abnormal discharge can be prevented in an image display such as an FED, and thus a high-luminance, high-quality display can be realized.
    • 公开了一种图像显示器,其包括其内表面设置有荧光屏的面板(6)和具有许多电子发射器件的后板。 荧光屏包括光吸收层(8),荧光体层(9),具有分离部分(10a)并形成在荧光体层上的金属背层(10),高电阻覆盖层 11),其在金属背层的分离部分上形成为跨越分离部分两侧的金属背层延伸,形成在高电阻覆盖层上的耐热细颗粒层(12) 以及吸收剂层(13),其形成为位于金属背层上并由耐热细粒层分割的膜。 因此,通过提高耐热特性,可以防止诸如FED的图像显示中由于异常放电而导致的电子发射器件或荧光屏的破坏和劣化,因此可以将高亮度,高质量的显示 实现。
    • 8. 发明申请
    • 薄膜結晶の形成方法とそれを用いた半導体素子
    • 形成薄膜晶体的方法和采用该方法的半导体元件
    • WO2002101122A1
    • 2002-12-19
    • PCT/JP2002/002685
    • 2002-03-20
    • 科学技術振興事業団田畑 仁川合 知二
    • 田畑 仁川合 知二
    • C30B25/14
    • C30B25/02C30B25/18C30B29/16H01L21/0242H01L21/02422H01L21/02472H01L21/02551H01L21/02554H01L21/02581
    • A method for forming a thin film crystal and a semiconductor element employing that method, especially a method for forming a high−quality thin film under low temperature by two steps for forming a thin film, and a semiconductor element provided with a new function utilizing a thin film epitaxial growth technology. The method for forming a thin film crystal characterized by comprising a step (a) for forming a high temperature buffer layer on a substrate, and step (b) for growing a thin film on the high temperature buffer layer under a low temperature. The semiconductor element having a thin film crystal characterized by comprising (a) a high temperature buffer layer formed on a substrate, and (b) a low temperature thin film formed on the high temperature buffer layer. The inventive method for forming a thin film crystal and the semiconductor element employing that method are especially suitable for the field of semiconductor device because a thin film can be formed at a low temperature.
    • 一种使用该方法形成薄膜晶体的方法和使用该方法的半导体元件,特别是用于在低温下通过两步形成薄膜来形成高质量薄膜的方法,以及具有利用 薄膜外延生长技术。 一种形成薄膜晶体的方法,其特征在于包括在基板上形成高温缓冲层的步骤(a)和用于在低温下在高温缓冲层上生长薄膜的步骤(b)。 具有薄膜晶体的半导体元件的特征在于,包括:(a)在基板上形成的高温缓冲层,和(b)在高温缓冲层上形成的低温薄膜。 本发明的用于形成薄膜晶体的方法和采用该方法的半导体元件特别适用于半导体器件的领域,因为可以在低温下形成薄膜。