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1. 发明申请

WO2012173416A3 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MENUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制作方法
公开(公告)号：WO2012173416A3
公开(公告)日：2013-03-28
申请号：PCT/KR2012004712
申请日：2012-06-15
申请人： SEOUL OPTO DEVICE CO LTD , SUH DUCK II , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM JI HYE
发明人： SUH DUCK II , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM JI HYE
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
摘要翻译：本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

2. 发明申请

WO2012173416A2 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MENUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制作方法
公开(公告)号：WO2012173416A2
公开(公告)日：2012-12-20
申请号：PCT/KR2012/004712
申请日：2012-06-15
申请人： SEOUL OPTO DEVICE CO., LTD. , SUH, Duck II , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , KIM, Ji Hye
发明人： SUH, Duck II , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , KIM, Ji Hye
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
摘要翻译：本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

3. 发明申请

WO2012165739A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING THE SAME, AND PACKAGE COMPRISING THE SAME 审中-公开
标题翻译：半导体发光器件，其制造方法以及包含其的封装
公开(公告)号：WO2012165739A1
公开(公告)日：2012-12-06
申请号：PCT/KR2011/010027
申请日：2011-12-23
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Ye Seul , KIM, Kyoung Wan , YOON, Yeo Jin , LEE, Jin Woong , KIM, Shin Hyoung , KIM, Tae Gyun
发明人： KIM, Ye Seul , KIM, Kyoung Wan , YOON, Yeo Jin , LEE, Jin Woong , KIM, Shin Hyoung , KIM, Tae Gyun
IPC分类号： H01L33/20
CPC分类号： H01L33/24 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L2933/0091
摘要： A semiconductor light-emitting device, which has excellent light emission efficiency in the lateral direction and facilitates substrate cutting, a method of fabricating the semiconductor light-emitting device, and a semiconductor light-emitting device including the semiconductor light-emitting device. The semiconductor light-emitting device includes a sapphire substrate and a nitride structure stacked on the upper surface of the substrate. The nitride structure has a plurality of nitride epitaxial layers including an active layer that generates light. A respective horizontal cross-section of the substrate and the nitride structure has a rhombic shape having two acute angles and two obtuse angles. The substrate has at least one refined area on at least one side surface thereof, the refined area having a band-like shape extending in a horizontal direction.
摘要翻译：一种半导体发光器件，其在横向上具有优异的发光效率并且有助于衬底切割，制造半导体发光器件的方法以及包括该半导体发光器件的半导体发光器件。半导体发光器件包括蓝宝石衬底和堆叠在衬底的上表面上的氮化物结构。氮化物结构具有包括产生光的有源层的多个氮化物外延层。衬底和氮化物结构的相应水平横截面具有菱形，具有两个锐角和两个钝角。衬底在其至少一个侧表面上具有至少一个精细区域，精细区域具有在水平方向上延伸的带状形状。

4. 发明申请

WO2012067311A1 LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 审中-公开
标题翻译：具有电极板的发光二极管芯片
公开(公告)号：WO2012067311A1
公开(公告)日：2012-05-24
申请号：PCT/KR2011/001385
申请日：2011-02-28
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Ye Seul , KIM, Kyoung Wan , YOON, Yeo Jin , LEE, Jin Woong , JEONG, Da Yeon , WOO, Sang Won , LEE, Keum Ju , OH, Sang Hyun
发明人： KIM, Ye Seul , KIM, Kyoung Wan , YOON, Yeo Jin , LEE, Jin Woong , JEONG, Da Yeon , WOO, Sang Won , LEE, Keum Ju , OH, Sang Hyun
IPC分类号： H01L33/36
CPC分类号： H01L33/387 , H01L33/0008 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0066
摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
摘要翻译：本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

5. 发明申请

WO2012005537A3 METHOD AND APPARATUS FOR ENCODING IMAGES USING TEMPLATE MATCHING AND METHOD AND APPARATUS FOR DECODING IMAGES 审中-公开
标题翻译：使用模板匹配编码图像的方法和装置以及用于解码图像的方法和装置
公开(公告)号：WO2012005537A3
公开(公告)日：2012-04-19
申请号：PCT/KR2011005001
申请日：2011-07-08
申请人： KOREA ELECTRONICS TELECOMM , LEE HA HYUN , LIM SUNG CHANG , KIM HUI YONG , JEONG SE YOON , KIM JONG HO , LEE JIN HO , CHO SUK HEE , CHOI JIN SOO , KIM JIN WOONG , AHN CHIE TEUK , KO SUNG JEA , JUNG SEUNG WON , YOON YEO JIN
发明人： LEE HA HYUN , LIM SUNG CHANG , KIM HUI YONG , JEONG SE YOON , KIM JONG HO , LEE JIN HO , CHO SUK HEE , CHOI JIN SOO , KIM JIN WOONG , AHN CHIE TEUK , KO SUNG JEA , JUNG SEUNG WON , YOON YEO JIN
IPC分类号： H04N7/26 , H04N7/32
CPC分类号： H04N19/61 , H04N19/105 , H04N19/176
摘要： Provided are a method and an apparatus for encoding images using template matching and a method and an apparatus for decoding images. The method for encoding the images can determine a template of an encoding target block and can determine a matching search target image for performing a matching search with the determined template among the recovered reference images. In addition, an optimum prediction block can be determined on the basis of the determined matching search target image and the template of the encoding target block.
摘要翻译：提供了一种使用模板匹配对图像进行编码的方法和装置，以及用于对图像进行解码的方法和装置。用于编码图像的方法可以确定编码目标块的模板，并且可以确定用于在恢复的参考图像中与所确定的模板执行匹配搜索的匹配搜索目标图像。此外，可以基于确定的匹配搜索目标图像和编码目标块的模板来确定最佳预测块。

6. 发明申请

WO2012044046A3 NOVEL METHYLCYCLOHEXANE DERIVATIVES AND USES THEREOF 审中-公开
公开(公告)号：WO2012044046A3
公开(公告)日：2012-04-05
申请号：PCT/KR2011/007117
申请日：2011-09-28
申请人： SK BIOPHARMACEUTICALS CO., LTD. , BAE, Sung Jin , YI, Han Ju , HWANG, Sun Gwan , JEONG, Mo Ses , YOON, Yeo Jin , CHAE, Sang Mi , PARK, Joo Young , RYU, Eun Ju
发明人： BAE, Sung Jin , YI, Han Ju , HWANG, Sun Gwan , JEONG, Mo Ses , YOON, Yeo Jin , CHAE, Sang Mi , PARK, Joo Young , RYU, Eun Ju
IPC分类号： C07D207/16 , C07D401/12 , A61K31/4025 , A61P25/04
摘要： A novel methylcyclohexane derivative, and a pharmaceutical composition including the same that is effective for the prevention or treatment of pain.

7. 发明申请

WO2011139079A3 PHARMACEUTICAL COMPOSITION FOR INHIBITING APOPTOSIS OF NEURON OR NEURODEGENERATION 审中-公开
标题翻译：用于抑制神经元或神经细胞凋亡的药物组合物
公开(公告)号：WO2011139079A3
公开(公告)日：2012-03-01
申请号：PCT/KR2011003318
申请日：2011-05-03
申请人： SK BIOPHARMACEUTICALS CO LTD , PARK CHEOL HYOUNG , MIN HYE KYUNG , PARK IN SUK , LIM MI JUNG , LEE JI WON , CHUNG JIN YONG , YOON YEO JIN , PARK JOO YOUNG
发明人： PARK CHEOL HYOUNG , MIN HYE KYUNG , PARK IN SUK , LIM MI JUNG , LEE JI WON , CHUNG JIN YONG , YOON YEO JIN , PARK JOO YOUNG
IPC分类号： A61K31/4196 , A61K31/4245 , A61K31/433 , A61P25/00
CPC分类号： C07D261/08 , A61K31/4196 , A61K31/4245 , A61K31/433
摘要： Provided is a pharmaceutical composition for inhibiting apoptosis of neurons or neurodegeneration. The pharmaceutical composition effectively prevents or treats diseases related to apoptosis of neurons or neurodegeneration.
摘要翻译：提供了抑制神经元凋亡或神经变性的药物组合物。药物组合物有效地预防或治疗与神经元凋亡相关的疾病或神经变性。

8. 发明申请

WO2012020901A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 审中-公开
标题翻译：具有改进的光提取效率的发光二极管
公开(公告)号：WO2012020901A1
公开(公告)日：2012-02-16
申请号：PCT/KR2011/001105
申请日：2011-02-19
申请人： SEOUL OPTO DEVICE CO., LTD. , YANG, Jeong Hee , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Jae Moo , LEE, Keum Ju
发明人： YANG, Jeong Hee , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Jae Moo , LEE, Keum Ju
IPC分类号： H01L33/36 , H01L33/44 , H01L33/00
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.
摘要翻译：公开了具有改进的光提取效率的发光二极管（LED）。 LED包括位于基板上并具有第一半导体层，有源层和第二半导体层的发光结构。第一电极焊盘电连接到第一半导体层。第二电极焊盘位于衬底上。绝缘反射层覆盖发光结构的一部分，并且位于第二电极焊盘下方，使得第二电极焊盘与发光结构间隔开。至少一个上延伸部连接到第二电极焊盘以与第二半导体层电连接。此外，光提取元件的图案位于第二半导体层上。

9. 发明申请

WO2010093190A9 LED CHIP FOR HIGH VOLTAGE OPERATION AND LED PACKAGE INCLUDING THE SAME 审中-公开
公开(公告)号：WO2010093190A9
公开(公告)日：2010-08-19
申请号：PCT/KR2010/000892
申请日：2010-02-12
申请人： SEOUL SEMICONDUCTOR CO., LTD. , LEE, Chung Hoon , SEO, Won Cheol , YOON, Yeo Jin , SHIN, Jin Cheol
发明人： LEE, Chung Hoon , SEO, Won Cheol , YOON, Yeo Jin , SHIN, Jin Cheol
IPC分类号： H01L33/16 , H01L33/02

10. 发明申请

WO2010050694A3 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2010050694A3
公开(公告)日：2010-07-15
申请号：PCT/KR2009006120
申请日：2009-10-22
申请人： SEOUL OPTO DEVICE CO LTD , LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
发明人： LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
IPC分类号： H01L33/08
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： Disclosed is a light emitting diode having a plurality of light emitting cells. The light emitting diode comprises half-wave light emitting units each of which has at least one light emitting cell and a first and a second terminal, and full-wave light emitting units each of which has at least one light emitting cell and a third terminal and a fourth terminal. The third terminals of the full-wave light emitting units are electrically and commonly connected to the second terminals of two half-wave light emitting units, and the fourth terminals of the full-wave light emitting units are electrically and commonly connected to the first terminals of another two half-wave light emitting units. Further, one of the half-wave light emitting units is connected in series between the third terminal of one of said two full-wave light emitting units disposed adjacent to each other and the fourth terminal of the other of the two full-wave light emitting units. Another half-wave light emitting unit is connected in series between the fourth terminal of one of said two full-wave light emitting units and the third terminal of the other of the two-full wave light emitting units. Whereby, the efficiency of using light emitting cells can be improved, and a light emitting diode which is stable to reverse voltage can be obtained.
摘要翻译：公开了具有多个发光单元的发光二极管。发光二极管包括半波发光单元，每个发光单元具有至少一个发光单元和第一和第二端子，全波发光单元各自具有至少一个发光单元和第三端子和第四终端。全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且全波发光单元的第四端子电连接到第一端子的另外两个半波发光单元。此外，半波发光单元中的一个串联连接在彼此相邻布置的所述两个全波发光单元中的一个的第三端子和两个全波发光区域中的另一个的第四端子单位。另一个半波发光单元串联连接在所述两个全波发光单元之一的第四端与两全波发光单元中另一个的第三端之间。由此，可以提高使用发光单元的效率，可以获得对反向电压稳定的发光二极管。

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