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1. 发明申请

WO2005007252A8 PUTTING STROKE ANALYZER AND PUTTER FOR USE THEREIN 审中-公开
标题翻译：将笔画分析器和推杆用于其中
公开(公告)号：WO2005007252A8
公开(公告)日：2005-06-16
申请号：PCT/JP0316450
申请日：2003-12-22
申请人： YAMADA TORU , SUZUKI DAIICHIRO
发明人： YAMADA TORU , SUZUKI DAIICHIRO
IPC分类号： A63B69/36 , G01B7/00 , G01B7/30
CPC分类号： A63B69/3614 , A63B69/3676
摘要： A putting stroke analyzer, and a putter for use therein, in which a signal generated in a position detecting antenna through electromagnetic induction is detected by stroking a putter (2) having a head (21) added with an LC resonance circuit, i.e. electromagnetic resonators (24a, 24b), above position detecting mats (3a, 3b) having a plurality of exciting coils also serving as the position detecting antennas extending, respectively, in the X axis direction and Y axis direction in order to grasp movement of the putter head in the putting stroke of golf continuously with a sufficient accuracy. It contributes to enhancement of skill of a player oneself or guidance of the player and to selection of a putter optimal to the player.
摘要翻译：一种推杆行程分析器及其中使用的推杆，其中通过触击具有添加有LC谐振电路的头部（21）的轻击棒（2）来检测通过电磁感应在位置检测天线中产生的信号，即电磁谐振器（24a，24b）的上方，在位置检测垫（3a，3b）的上方，所述位置检测垫具有多个也用作在X轴方向和Y轴方向上分别延伸的位置检测天线的励磁线圈，以便抓住推杆头的移动在连续高尔夫球的击球过程中具有足够的准确性。它有助于提高玩家本身的技能或玩家的指导，并有助于选择最适合玩家的推杆。

2. 发明申请

WO2002080388A2 HIGH FREQUENCY SWITCH, RADIO COMMUNICATION APPARATUS, AND HIGH FREQUENCY SWITCHING METHOD 审中-公开
标题翻译：高频开关，无线电通信设备和高频切换方式
公开(公告)号：WO2002080388A2
公开(公告)日：2002-10-10
申请号：PCT/JP2002/002951
申请日：2002-03-27
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , URIU, Kazuhide , YAMADA, Toru , NAKAKUBO, Hideaki , TANAKA, Masaharu
发明人： URIU, Kazuhide , YAMADA, Toru , NAKAKUBO, Hideaki , TANAKA, Masaharu
IPC分类号： H04B1/40
CPC分类号： H04B1/406 , H04B1/005 , H04B1/0057 , H04B1/006 , H04B1/48
摘要： For example, in a conventional high frequency switch used for a mobile phone and so on, high frequency distortion is caused by a diode which is turned off upon transmission. A high frequency switch includes a switch circuit 2 for switching transmission and reception performed via a transmitting terminal Tx2 and receiving terminals RX2 and Rx3, said switch circuit having a diode D1 turned off upon transmission, and a low-pass filter 11 for suppressing high frequency distortion caused by the diode D1 upon transmission.
摘要翻译：例如，在用于移动电话等的常规高频开关中，高频失真是由传输时关闭的二极管引起的。高频开关包括用于通过发送端子Tx2和接收端子RX2和Rx3进行发送和接收的开关电路2，所述开关电路在发送时具有截止的二极管D1和用于抑制高频率的低通滤波器11 传输时由二极管D1引起的失真。

3. 发明申请

WO1998005120A1 DUAL-BAND MULTILAYER BANDPASS FILTER 审中-公开
标题翻译：双频多层滤波器
公开(公告)号：WO1998005120A1
公开(公告)日：1998-02-05
申请号：PCT/JP1997002660
申请日：1997-07-31
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , KITAZAWA, Shoichi , YAMADA, Toru , ISHIZAKI, Toshio , OGAWA, Koichi , FUJIKAWA, Makoto , FUJISAWA, Tadanori , ISHIDA, Kaoru , NAGATOMI, Yoshitaka
发明人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
IPC分类号： H03H07/01
CPC分类号： H01P1/20345 , H01P1/2135 , H03H7/0123 , H03H7/175 , H03H7/463 , H03H2001/0085 , H03H2250/00
摘要： A dual-band multilayer bandpass filter having a first filter unit (18) for filtering a first signal having a first frequency and a second filter unit (19) for filtering a second signal having a second frequency. First and second filter units are arranged in stacked ceramic layers. A first blocking element (20a, 20b; 25a, 25b; 25a', 25b'; 46a, 46b) is coupled to the first filter unit (18) for blocking the second signal from being applied to the first filter unit (18). A second blocking element (21a, 21b; 26a, 26b; 25c, 25d; 27a, 27b) is coupled to the second filter unit (19) for blocking the first signal from being applied to the second filter unit (19).
摘要翻译：一种双频带多层带通滤波器，具有用于滤波具有第一频率的第一信号的第一滤波器单元（18）和用于滤波具有第二频率的第二信号的第二滤波器单元（19）。第一和第二过滤器单元布置在堆叠的陶瓷层中。第一阻挡元件（20a，20b; 25a，25b; 25a'，25b'; 46a，46b）耦合到第一滤波器单元（18），用于阻止第二信号施加到第一滤波器单元（18）。第二阻挡元件（21a，21b; 26a，26b; 25c，25d; 27a，27b）耦合到第二滤波器单元（19），用于阻止第一信号施加到第二滤波器单元（19）。

4. 发明申请

WO2007086204A1 DOUBLE GATE ISOLATION STRUCTURE FOR CCDS AND CORRESPONDING FABRICATING METHOD 审中-公开
标题翻译： CCDS和相应制造方法的双门隔离结构
公开(公告)号：WO2007086204A1
公开(公告)日：2007-08-02
申请号：PCT/JP2006/324790
申请日：2006-12-06
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , NIISOE, Naoto , HIRATA, Kazuhisa , YAMADA, Toru
发明人： NIISOE, Naoto , HIRATA, Kazuhisa , YAMADA, Toru
IPC分类号： H01L29/768 , H01L27/148 , H01L27/146 , H01L21/339 , H01L27/105
CPC分类号： H01L27/1057 , H01L27/14683 , H01L27/14831 , H01L29/66954 , H01L29/76833
摘要： A first oxide film (102) is formed on a semiconductor substrate (101). A first nitride film (103) is formed on first gate electrode formation regions of the first oxide film (102). A plurality of first gate electrodes (104) are provided on the first nitride film (103) so as to be spaced apart from one another with a predetermined distance therebetween. A second oxide film (105) covers upper part and side walls of each of the first gate electrodes (104). A sidewall spacer (106) of a third oxide film is buried in an overhang portion generated on each side wall of each of the first gate electrodes (104) covered by the second oxide film (105). A second nitride film (107) covers the second oxide film (105), the sidewall spacer (106) and part of the first oxide film (102) located between the first gate electrodes (104). A plurality of second gate electrodes (108) are formed on at least part of the second nitride film (107) located between adjacent two of the first gate electrodes (104).
摘要翻译：在半导体衬底（101）上形成第一氧化膜（102）。第一氮化物膜（103）形成在第一氧化膜（102）的第一栅电极形成区上。多个第一栅电极（104）设置在第一氮化物膜（103）上，以彼此间隔开预定距离。第二氧化膜（105）覆盖每个第一栅电极（104）的上部和侧壁。第三氧化物膜的侧壁间隔物（106）被埋在由第二氧化膜（105）覆盖的每个第一栅极（104）的每个侧壁上产生的悬垂部分中。第二氮化物膜（107）覆盖位于第一栅极（104）之间的第二氧化物膜（105），侧壁间隔物（106）和第一氧化物膜（102）的一部分。在位于相邻的两个第一栅电极（104）之间的第二氮化物膜（107）的至少一部分上形成多个第二栅电极（108）。

5. 发明申请

WO2007086203A1 DOUBLE GATE ISOLATION STRUCTURE FOR CCDS AND CORRESPONDING FABRICATING METHOD 审中-公开
标题翻译： CCDS和相应制造方法的双门隔离结构
公开(公告)号：WO2007086203A1
公开(公告)日：2007-08-02
申请号：PCT/JP2006/324789
申请日：2006-12-06
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , NIISOE, Naoto , HIRATA, Kazuhisa , YAMADA, Toru
发明人： NIISOE, Naoto , HIRATA, Kazuhisa , YAMADA, Toru
IPC分类号： H01L29/768 , H01L21/339 , H01L27/146 , H01L27/148 , H01L27/105
CPC分类号： H01L29/66954 , H01L27/14683 , H01L27/14812 , H01L27/14831 , H01L29/76833
摘要： A first oxide film (102) and a first nitride film (103) are formed over a semiconductor substrate (101) so as to be stacked in this order. A plurality of first gate electrodes (104) are arranged on the first nitride film (103) so as to be spaced apart from one another with a predetermined distance therebetween. Upper part and side walls of each of the first gate electrode (104) is covered by a second oxide film (105). The second oxide film (105) and part of the first nitride film (103) located between the first gate electrodes (104) are covered by the second nitride film (106). A plurality of second gate electrodes (107) are formed on at least part of the second nitride film (106) located between adjacent two of the first gate electrodes (104). Each of the second gate electrodes (107) is separated from the first gate electrode (104) by the second oxide film (105) and the second nitride film (106) and separated from the semiconductor substrate (101) by the first oxide film (102), the first nitride film (103) and the second nitride film (106).
摘要翻译：在半导体衬底（101）上形成第一氧化膜（102）和第一氮化物膜（103），以便按顺序堆叠。多个第一栅极电极（104）被布置在第一氮化物膜（103）上以彼此间隔开预定的距离。第一栅电极（104）中的每一个的上部和侧壁被第二氧化膜（105）覆盖。位于第一栅电极（104）之间的第二氧化物膜（105）和第一氮化物膜（103）的一部分被第二氮化物膜（106）覆盖。在位于相邻的两个第一栅电极（104）之间的第二氮化物膜（106）的至少一部分上形成多个第二栅电极（107）。通过第二氧化膜（105）和第二氮化物膜（106）将第二栅极电极（107）与第一栅电极（104）分离，并且通过第一氧化膜（105）与半导体衬底 102），第一氮化物膜（103）和第二氮化物膜（106）。

6. 发明申请

WO0076067A9 SAW FILTER 审中-公开
标题翻译： SAW滤波器
公开(公告)号：WO0076067A9
公开(公告)日：2007-07-05
申请号：PCT/JP0003494
申请日：2000-05-31
申请人： MATSUSHITA ELECTRIC IND CO LTD , TSUZUKI SHIGERU , IGAKI TSUTOMU , MATSUNAMI KEN , NISHIMURA KAZUNORI , NAKAMURA HIROYUKI , YAMADA TORU
发明人： TSUZUKI SHIGERU , IGAKI TSUTOMU , MATSUNAMI KEN , NISHIMURA KAZUNORI , NAKAMURA HIROYUKI , YAMADA TORU
IPC分类号： H03H9/00 , H03H9/145 , H03H9/64
CPC分类号： H03H9/6433 , H03H9/0076 , H03H9/02637 , H03H9/14505 , H03H9/14529 , H03H9/14538 , H03H9/14552
摘要： A SAW filter comprises a piezoelectric substrate, on which are formed at least two filter tracks having at least two IDT electrodes for input and output. The two filter tracks are substantially in-phase in the passband and substantially 180 degrees out of phase outside the passband. To achieve the above phase relation, the input IDT electrode of one filter track is connected in parallel with the input IDT electrode of the other filter track, while the output IDT electrode of one filter track is connected in parallel with the output IDT electrode of the other filter track. The transfer functions of the two filter tracks decrease 3dB from the maximum values at substantially the same frequency. The SAW filter is small, and has a wider passband and abrupt attenuation characteristic.
摘要翻译： SAW滤波器包括压电基片，其上形成有至少两个具有至少两个用于输入和输出的IDT电极的滤波器轨道。两个滤波器轨道在通带中基本上是同相的，并且在通带外部基本上为180度的相位。为了实现上述相位关系，一个滤波器轨道的输入IDT电极与另一滤波器轨道的输入IDT电极并联连接，而一个滤波器轨道的输出IDT电极与其他滤波器轨道。两个滤波器轨道的传递函数从基本上相同频率的最大值减小3dB。 SAW滤波器小，具有更宽的通带和突发衰减特性。

7. 发明申请

WO1998031066A1 MULTILAYER FILTER 审中-公开
标题翻译：多层过滤器
公开(公告)号：WO1998031066A1
公开(公告)日：1998-07-16
申请号：PCT/JP1997004906
申请日：1997-12-26
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , NAGATOMI, Yoshitaka , YUDA, Naoki , ISHIZAKI, Toshio , KITAZAWA, Shoichi , YAMADA, Toru
发明人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
IPC分类号： H01P01/203
CPC分类号： H01P1/20345
摘要： A multilayer filter which enables constitution of a phase shifter without increasing the shape of the filter and enables miniaturization of the entire filter without causing deterioration in characteristics. Coupling sections (3A) of an input/output pattern are caused to face, via a dielectric layer (3), open ends of a plurality of strip lines (4A) provided on a dielectric layer (4). Continuous section (3B) of the input/output pattern connecting end electrodes (7A, 7B) provided on the lateral sides and the coupling sections (3A) of the input/output pattern, the end electrodes (7A, 7B), an input electrode (8A), and an output electrode (8B) are connected by an electrode pattern (5A). Thus, inductance (L1, L2) is formed.
摘要翻译：一种多层滤波器，其能够构成移相器而不增加滤波器的形状，并且能够使整个滤波器的小型化而不会导致特性的劣化。输入/输出图案的耦合部分（3A）经由电介质层（3）面向设置在电介质层（4）上的多条带状线（4A）的开口端。连接端部电极（7A，7B）的连接部分（3B）连接在输入/输出图案的侧面和耦合部分（3A）上，端部电极（7A，7B），输入电极（8A）和输出电极（8B）通过电极图案（5A）连接。因此，形成电感（L1，L2）。

8. 发明申请

WO02080388A3 HIGH FREQUENCY SWITCH, RADIO COMMUNICATION APPARATUS, AND HIGH FREQUENCY SWITCHING METHOD 审中-公开
标题翻译：高频开关，无线电通信设备和高频切换方式
公开(公告)号：WO02080388A3
公开(公告)日：2003-09-12
申请号：PCT/JP0202951
申请日：2002-03-27
申请人： MATSUSHITA ELECTRIC IND CO LTD , URIU KAZUHIDE , YAMADA TORU , NAKAKUBO HIDEAKI , TANAKA MASAHARU
发明人： URIU KAZUHIDE , YAMADA TORU , NAKAKUBO HIDEAKI , TANAKA MASAHARU
IPC分类号： H04B1/40 , H04B1/48
CPC分类号： H04B1/406 , H04B1/005 , H04B1/0057 , H04B1/006 , H04B1/48
摘要： For example, in a conventional high frequency switch used for a mobile phone and so on, high frequency distortion is caused by a diode which is turned off upon transmission. A high frequency switch includes a switch circuit 2 for switching transmission and reception performed via a transmitting terminal Tx2 and receiving terminals RX2 and Rx3, said switch circuit having a diode D1 turned off upon transmission, and a low-pass filter 11 for suppressing high frequency distortion caused by the diode D1 upon transmission.
摘要翻译：例如，在用于移动电话等的常规高频开关中，高频失真是由传输时关闭的二极管引起的。高频开关包括用于通过发送端子Tx2和接收端子RX2和Rx3进行发送和接收的开关电路2，所述开关电路在发送时具有截止的二极管D1和用于抑制高频率的低通滤波器11 传输时由二极管D1引起的失真。

9. 发明申请

WO2002071532A1 DIELECTRIC FILTER, ANTENNA DUPLEXER 审中-公开
标题翻译：电介质滤波器，天线双工器
公开(公告)号：WO2002071532A1
公开(公告)日：2002-09-12
申请号：PCT/JP2002/001737
申请日：2002-02-26
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , MAEKAWA, Tomoya , SUGAYA, Yasuhiro , YAMADA, Toru , ISHIZAKI, Toshio
发明人： MAEKAWA, Tomoya , SUGAYA, Yasuhiro , YAMADA, Toru , ISHIZAKI, Toshio
IPC分类号： H01P1/203
CPC分类号： H01P1/20345 , H01P1/2135 , H01P11/007
摘要： A dielectric filter includes resonator electrodes, an inter-stage coupling capacitor electrode, and an input/output coupling capacitor electrode on dielectric substrates, respectively. The resonator electrodes are electro-magnetically coupled to each other to form a tri-plate structure, are made of a metallic foil embedded in a resonator dielectric substrate. Another dielectric filter includes an upper shield electrode dielectric substrate, an inter-stage coupling capacitor dielectric substrate, a resonator dielectric substrate, and an input/output coupling capacitor dielectric substrate which are made of a composite dielectric material including a high-dielectric-constant material and a low-dielectric-constant material. The above described arrangement provides the dielectric filter with an improved Q factor of a resonator, a low loss, and a high attenuation.
摘要翻译：介质滤波器分别包括谐振器电极，级间耦合电容器电极和介电基片上的输入/输出耦合电容器电极。谐振器电极彼此电磁耦合以形成三板结构，由嵌入在谐振器电介质基片中的金属箔制成。另一个介质滤波器包括由包括高介电常数材料的复合介电材料制成的上屏蔽电极介质基板，级间耦合电容器介质基板，谐振电介质基板和输入/输出耦合电容器电介质基板和低介电常数材料。上述布置为介质滤波器提供了谐振器的改进的Q因子，低损耗和高衰减。

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