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    • 6. 发明申请
    • EUV LITHOGRAPHY SYSTEM FOR DENSE LINE PATTERNING
    • 用于密集线图案的EUV光刻系统
    • WO2017199096A1
    • 2017-11-23
    • PCT/IB2017/000696
    • 2017-05-19
    • NIKON CORPORATIONFLAGELLO, Donis, G.WILLIAMSON, David, M.RENWICK, Stephen, P.SMITH, Daniel, GeneBINNARD, Michael, B.
    • FLAGELLO, Donis, G.WILLIAMSON, David, M.RENWICK, Stephen, P.SMITH, Daniel, GeneBINNARD, Michael, B.
    • G03F7/20G02B5/18
    • Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece (156) includes source of EUV radiation (114) : a pattern-source (144) defining ID pattern : an illumination unit (IU) configured to irradiate the pattern-source (144) : and projection optics (PO) configured to optically image, with a reduction factor N>1, the ID pattern on image surface that is optically-conjugate to the ID pattern. Irradiation of the pattern-source (144) can be on-axis or off-axis. While ID pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source (144) can be flat or curved. The IU may include a relay reflector (126). A PO' s reflector may include multiple spatially-distinct reflecting elements (130, 134) aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the ID pattern of the pattern-source (144).
    • 专门配置成在目标工件(156)上印刷一维线的极紫外(EUV)刻蚀引擎包括EUV辐射源(114):图案源(144) ID图案;配置为照射图案源(144)的照明单元(IU);以及被配置为以缩减因子N> 1光学地成像光学共轭的图像表面上的ID图案的投影光学器件(PO) 到ID模式。 图案源(144)的照射可以是同轴的或离轴的。 当ID图案具有第一空间频率时,其光学图像具有第二空间频率,其至少是第一空间频率的两倍。 图案源(144)可以是平坦的或弯曲的。 IU可以包括中继反射器(126)。 PO的反射器可以包括聚集地形成这种反射器的多个空间不同的反射元件(130,134)。 该引擎被配置为不允许形成空间分辨率基本上等于图案源(144)的ID图案的节距的任何2D图案的光学图像。