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1. 发明申请

WO2008030587A2 SMALL FOOTPRINT HIGH POWER LIGHT EMITTING PACKAGE WITH PLURALITY OF LIGHT EMITTING DIODE CHIPS 审中-公开
标题翻译：带有多个发光二极管芯片的小型足底大功率发光组件
公开(公告)号：WO2008030587A2
公开(公告)日：2008-03-13
申请号：PCT/US2007/019591
申请日：2007-09-07
申请人： LUMINATION LLC , SACKRISON, Michael , GAO, Xiang , AANEGOLA, Srinath, K. , VENUGOPALAN, Hari, S.
发明人： SACKRISON, Michael , GAO, Xiang , AANEGOLA, Srinath, K. , VENUGOPALAN, Hari, S.
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A light emitting package includes a support (12, 112, 212) defining a support surface (14). A first light emitting diode chip (20, 120, 220) is secured to the supporting surface and is configured to emit light having a first spectral distribution. A second light emitting diode chip (22, 122, 123, 222) is secured to the first light emitting diode chip. The second light emitting diode chip is configured to emit light having a second spectral distribution different from the first spectral distribution. Optionally, a third light emitting diode chip (223) is disposed on the second light emitting diode chip (222).
摘要翻译：发光封装件包括限定支撑表面（14）的支撑件（12,112,212）。第一发光二极管芯片（20,120,220）被固定到支撑表面并且被配置为发射具有第一光谱分布的光。第二发光二极管芯片（22,122,123,222）固定到第一发光二极管芯片。第二发光二极管芯片被配置成发射具有不同于第一光谱分布的第二光谱分布的光。可选地，第三发光二极管芯片（223）设置在第二发光二极管芯片（222）上。

2. 发明申请

WO2007009042A1 LASER LIFT-OFF LED WITH IMPROVED LIGHT EXTRACTION 审中-公开
标题翻译：具有改进的光提取的激光提升LED
公开(公告)号：WO2007009042A1
公开(公告)日：2007-01-18
申请号：PCT/US2006/027205
申请日：2006-07-11
申请人： GELCORE LLC , GAO, Xiang , VENUGOPALAN, Hari, S. , ELIASHEVICH, Ivan , SACKRISON, Michael
发明人： GAO, Xiang , VENUGOPALAN, Hari, S. , ELIASHEVICH, Ivan , SACKRISON, Michael
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
摘要翻译：发光器件包括限定发光pn结的半导体层的叠层和设置在半导体层堆叠上的电介质层。电介质层的折射率基本上与半导体层叠层的折射率相匹配。电介质层具有远离半导体层堆叠的主表面。远端主表面包括图案化，粗糙化或纹理化，其被配置为促进在半导体层堆叠中产生的光的提取。

3. 发明申请

WO2004084320A3 FLIP-CHIP LIGHT EMITTING DIODE WITH A THERMALLY STABLE MULTIPLE LAYER REFLECTIVE P-TYPE CONTACT 审中-公开
标题翻译：带有热稳定型多层反射型P型接触器的片状光发光二极管
公开(公告)号：WO2004084320A3
公开(公告)日：2005-04-14
申请号：PCT/US2004008514
申请日：2004-03-19
申请人： GELCORE LLC , VENUGOPALAN HARI S
发明人： VENUGOPALAN HARI S
IPC分类号： H01L33/32 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2224/14 , H01L2224/16225
摘要： A p-type contact (30) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer (28) of a group III-nitride flip chip light emitting diode die (10) with a bonding pad (60). A first palladium layer (42) is disposed on the p-type group III-nitride layer (28). The first palladium layer (42) is diffused through a native oxide of the p-type group III-nitride layer (28) to make electrical contact with the p-type group III-nitride layer (28). A reflective silver layer (44) is disposed on the first palladium layer (42). A second palladium layer (46) is disposed on the silver layer (44). A bonding stack (48) including at least two layers (50, 52, 54) is disposed on the second palladium layer (46). The bonding stack (48) is adapted for flip chip bonding the p-type layer (28) to the bonding pad (60).
摘要翻译：公开了用于倒装芯片接合的p型触点（30），并且使III族氮化物倒装芯片发光二极管管芯（10）的p型III族氮化物层（28）与接合焊盘（60）电接触）。第一钯层（42）设置在p型III族氮化物层（28）上。第一钯层（42）通过p型III族氮化物层（28）的天然氧化物扩散以与p型III族氮化物层（28）电接触。反射银层（44）设置在第一钯层（42）上。第二钯层（46）设置在银层（44）上。包括至少两层（50,52,54）的粘合堆叠（48）设置在第二钯层（46）上。接合堆叠（48）适于将p型层（28）倒装成键合到接合焊盘（60）。

4. 发明申请

WO2008030587A3 SMALL FOOTPRINT HIGH POWER LIGHT EMITTING PACKAGE WITH PLURALITY OF LIGHT EMITTING DIODE CHIPS 审中-公开
标题翻译：小功率发光二极管灯泡的大功率发光包
公开(公告)号：WO2008030587A3
公开(公告)日：2008-08-14
申请号：PCT/US2007019591
申请日：2007-09-07
申请人： LUMINATION LLC , SACKRISON MICHAEL , GAO XIANG , AANEGOLA SRINATH K , VENUGOPALAN HARI S
发明人： SACKRISON MICHAEL , GAO XIANG , AANEGOLA SRINATH K , VENUGOPALAN HARI S
IPC分类号： H01L25/075 , H01L33/00
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A light emitting package includes a support (12, 112, 212) defining a support surface (14). A first light emitting diode chip (20, 120, 220) is secured to the supporting surface and is configured to emit light having a first spectral distribution. A second light emitting diode chip (22, 122, 123, 222) is secured to the first light emitting diode chip. The second light emitting diode chip is configured to emit light having a second spectral distribution different from the first spectral distribution. Optionally, a third light emitting diode chip (223) is disposed on the second light emitting diode chip (222).
摘要翻译：发光包装包括限定支撑表面（14）的支撑件（12,112,212）。第一发光二极管芯片（20,120,220）固定到支撑表面并且被配置为发射具有第一光谱分布的光。第二发光二极管芯片（22,122,123,222）固定到第一发光二极管芯片。第二发光二极管芯片被配置为发射具有与第一光谱分布不同的第二光谱分布的光。可选地，第三发光二极管芯片（223）设置在第二发光二极管芯片（222）上。

5. 发明申请

WO2004084320A2 FLIP-CHIP LIGHT EMITTING DIODE WITH A THERMALLY STABLE MULTIPLE LAYER REFLECTIVE P-TYPE CONTACT 审中-公开
标题翻译：带有热稳定型多层反射型P型接触器的片状光发光二极管
公开(公告)号：WO2004084320A2
公开(公告)日：2004-09-30
申请号：PCT/US2004/008514
申请日：2004-03-19
申请人： GELCORE LLC , VENUGOPALAN, Hari, S.
发明人： VENUGOPALAN, Hari, S.
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2224/14 , H01L2224/16225
摘要： A p-type contact (30) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer (28) of a group III-nitride flip chip light emitting diode die (10) with a bonding pad (60). A first palladium layer (42) is disposed on the p-type group III-nitride layer (28). The first palladium layer (42) is diffused through a native oxide of the p-type group III-nitride layer (28) to make electrical contact with the p-type group III-nitride layer (28). A reflective silver layer (44) is disposed on the first palladium layer (42). A second palladium layer (46) is disposed on the silver layer (44). A bonding stack (48) including at least two layers (50, 52, 54) is disposed on the second palladium layer (46). The bonding stack (48) is adapted for flip chip bonding the p-type layer (28) to the bonding pad (60).
摘要翻译：公开了用于倒装芯片接合的p型触点（30），并且使III族氮化物倒装芯片发光二极管管芯（10）的p型III族氮化物层（28）与接合焊盘（60）电接触）。第一钯层（42）设置在p型III族氮化物层（28）上。第一钯层（42）通过p型III族氮化物层（28）的天然氧化物扩散以与p型III族氮化物层（28）电接触。反射银层（44）设置在第一钯层（42）上。第二钯层（46）设置在银层（44）上。包括至少两层（50,52,54）的粘合堆叠（48）设置在第二钯层（46）上。接合堆叠（48）适于将p型层（28）倒装成键合到接合焊盘（60）。

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