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1. 发明申请

WO2013062936A1 BACK-BIASING WORD LINE SWITCH TRANSISTORS 审中-公开
标题翻译：反向偏移字线开关晶体管
公开(公告)号：WO2013062936A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/061421
申请日：2012-10-23
申请人： SANDISK TECHNOLOGIES, INC. , TOYAMA, Fumiaki , HIGASHITANI, Masaaki
发明人： TOYAMA, Fumiaki , HIGASHITANI, Masaaki
IPC分类号： G11C16/04 , G11C16/08
CPC分类号： G11C16/0483 , G11C16/08
摘要： Back biasing word line switch transistors is disclosed. One embodiment includes word line switch transistors that are in a well in a substrate. A memory array having non-volatile storage devices may be in a separate well in the substrate. The well of the word line switch transistors may be biased separately from the well of the non-volatile storage devices. While programming the non-volatile storage devices, a negative voltage may be applied to the well of the word line switch transistors. This may reduce the voltage that needs to be applied to the gate of a WL switch transistor to pass the program voltage to the selected word line. Therefore, charge pumps can be made smaller, since the maximum voltage they need to generate is smaller. A word line switch transistor may be back-biased during a read operation to pass a negative read compare voltage to a selected word line.
摘要翻译：公开了背偏置字线开关晶体管。一个实施例包括位于衬底中的阱中的字线开关晶体管。具有非易失性存储装置的存储器阵列可以在衬底中的单独的阱中。字线开关晶体管的阱可以与非易失性存储器件的阱分开偏置。在对非易失性存储设备进行编程时，可以向字线开关晶体管的阱施加负电压。这可以降低需要施加到WL开关晶体管的栅极的电压，以将编程电压传递到所选择的字线。因此，可以使电荷泵更小，因为它们需要产生的最大电压较小。在读取操作期间，字线开关晶体管可以被反向偏置，以将负的读取比较电压传递到所选择的字线。

2. 发明申请

WO2014004095A1 SYSTEM TO REDUCE STRESS ON WORD LINE SELECT TRANSISTOR DURING ERASE OPERATION 审中-公开
标题翻译：在擦除操作期间减少字线选择晶体管的压力的系统
公开(公告)号：WO2014004095A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/045585
申请日：2013-06-13
申请人： SANDISK TECHNOLOGIES, INC. , DUNGA, Mohan, Vamsi , MUI, Man , HIGASHITANI, Masaaki , TOYAMA, Fumiaki
发明人： DUNGA, Mohan, Vamsi , MUI, Man , HIGASHITANI, Masaaki , TOYAMA, Fumiaki
IPC分类号： G11C8/08 , G11C16/08 , G11C16/16 , G11C11/56
CPC分类号： G11C16/16 , G11C8/08 , G11C11/5635 , G11C16/08 , G11C16/14
摘要： A system for erasing a non-volatile storage system that reduces the voltage across the word line select transistors which interface between the word lines and global control lines. The use of the lower voltage across the word line select transistors allows for the word line select transistors to be made smaller. The use of smaller components allows the non-volatile storage system to include more memory cells, thereby providing the ability to store more data.
摘要翻译：一种用于擦除非易失性存储系统的系统，其降低了在字线和全局控制线之间接合的字线选择晶体管两端的电压。在字线选择晶体管两端使用较低的电压允许使字线选择晶体管更小。使用更小的组件允许非易失性存储系统包括更多的存储器单元，从而提供存储更多数据的能力。

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