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1. 发明申请

WO2007030327A2 HIGH TEMPERATURE MICROELECTROMECHANICAL (MEM) DEVICES AND FABRICATION METHOD 审中-公开
标题翻译：高温微电子（MEM）器件和制造方法
公开(公告)号：WO2007030327A2
公开(公告)日：2007-03-15
申请号：PCT/US2006/032960
申请日：2006-08-22
申请人： TELEDYNE LICENSING, LLC , DE NATALE, Jeffrey, F. , BORWICK, Robert, L. , STUPAR, Philip, A.
发明人： DE NATALE, Jeffrey, F. , BORWICK, Robert, L. , STUPAR, Philip, A.
IPC分类号： H01L21/00
CPC分类号： B81C1/0069 , B81C2203/032
摘要： A microelectromechanical (MEM) device per the present invention comprises a semiconductor wafer - typically an SOI wafer, a substrate, and a high temperature bond which bonds the wafer to the substrate to form a composite structure. Portions of the composite structure are patterned and etched to define stationary and movable MEM elements, with the movable elements being mechanically coupled to the stationary elements. The high temperature bond is preferably a mechanical bond, with the wafer and substrate having respective bonding pads which are aligned and mechanically connected to form a thermocompression bond to effect the bonding. A metallization layer is typically deposited on the composite structure and patterned to provide electrical interconnections for the device. The metallization layer preferably comprises a conductive refractory material such as platinum to withstand high temperature environments .
摘要翻译：根据本发明的微机电（MEM）装置包括半导体晶片 - 通常是SOI晶片，衬底和将晶片结合到衬底以形成复合结构的高温接合。复合结构的部分被图案化和蚀刻以限定静止和可移动的MEM元件，其中可移动元件机械地联接到固定元件。高温键优选是机械结合，其中晶片和衬底具有对准和机械连接以形成热压接以实现结合的各自的焊盘。金属化层通常沉积在复合结构上并被图案化以为器件提供电互连。金属化层优选地包括诸如铂的导电耐火材料以承受高温环境。

2. 发明申请

WO2007015747A2 ELECTRICALLY CONTROLLED TILTABLE MICROSTRUCTURES 审中-公开
标题翻译：电控可调微结构
公开(公告)号：WO2007015747A2
公开(公告)日：2007-02-08
申请号：PCT/US2006/027353
申请日：2006-07-13
申请人： TELEDYNE LICENSING, LLC , DE NATALE, Jeffrey, F. , LI, Xiaobin
发明人： DE NATALE, Jeffrey, F. , LI, Xiaobin
IPC分类号： B81B3/00 , G02B26/08
CPC分类号： G02B26/0841 , B81B3/0062 , B81B2201/033 , B81B2201/042 , B81B2203/053 , B81B2203/058
摘要： A support structure extends upwards from a substrate and supports a tiltable platform, the upper surface of which can be a mirror, by means of spaced flexible couplings that enable the platform to tilt relative to the support structure . Respective electrodes associated with the substrate and platform control the platform tilt in response to applied signals. The platform electrodes are preferably spaced below and tilt with the platform, with the platform extending laterally from the support structure further than the platform electrodes. The platform is preferably bulk micromachined, and the support structure surface micromachined.
摘要翻译：支撑结构从衬底向上延伸，并且通过间隔开的柔性联接器支撑可倾斜的平台，其上表面可以是反射镜，其使得平台相对于支撑结构倾斜。与基板和平台相关联的各电极响应于所施加的信号控制平台倾斜。平台电极优选地与平台隔开并倾斜，平台从支撑结构横向延伸超过平台电极。该平台优选是体积微加工的，并且支撑结构表面微加工。

3. 发明申请

WO2007040796A3 LCD COMPENSATOR COMPRISING A RUBBED CROSSLINKED PVA FILM AND A POLYMERIC NEMATIC LC FILM. 审中-公开
标题翻译：包含橡胶交联PVA薄膜和聚合物电泳薄膜的LCD补偿器。
公开(公告)号：WO2007040796A3
公开(公告)日：2009-05-14
申请号：PCT/US2006030251
申请日：2006-08-02
申请人： TELEDYNE LICENSING LLC , HALE LEONARD G , CHUNG YOUNG J , GUNNING WILLIAM J III
发明人： HALE LEONARD G , CHUNG YOUNG J , GUNNING WILLIAM J III
IPC分类号： G02F1/1335
CPC分类号： G02F1/133634 , G02B5/3016 , Y10T428/1059 , Y10T428/1082 , Y10T428/31507
摘要： An anisotropic cross-linked PVA alignment layer for aligning nematic polymeric liquid crystal compensator films, which also provides an out-of-plane retardation. The cross-linked PVA alignment layer, when applied in sufficient thickness functions as both a negative uniaxial C-plate and causes alignment of the nematic liquid crystal molecules. The combination of the retardation provided by the alignment layer and the compensator film deposited on it provides a significant improvement in the contrast and color stability of liquid crystal displays (LCDs) at large viewing angles in which they are used.
摘要翻译：用于对向向列聚合物液晶补偿膜的各向异性交联PVA取向层，其也提供了面外延迟。当交联PVA取向层以足够的厚度施加时，作为负单轴C板同时发挥向列型液晶分子的取向。由对准层提供的延迟和沉积在其上的补偿膜的组合提供了在使用它们的大视角下的液晶显示器（LCD）的对比度和颜色稳定性的显着改善。

4. 发明申请

WO2007027337A3 SIGNAL-CARRYING FLEXURE STRUCTURE FOR MICROELECTRO-MECHANICAL DEVICES 审中-公开
标题翻译：用于微电子机械装置的信号携带弯曲结构
公开(公告)号：WO2007027337A3
公开(公告)日：2009-04-30
申请号：PCT/US2006029468
申请日：2006-07-26
申请人： TELEDYNE LICENSING LLC , YAO JUN J
发明人： YAO JUN J
IPC分类号： H02N1/00 , H02K5/00
CPC分类号： H02N1/006
摘要： A signal-carrying flexure structure for a MEM device comprises at least two conductive flexure segments having respective cross-sectional areas, and at least one crosspiece affixed to the flexure segments to operatively couple the segments together such that the flexure segments and crosspiece form a single flexure structure. The resulting flexure structure's spring constant is less than that of a solid flexure having a comparable total cross- sectional area, while its resistance is approximately equal to that of the solid flexure.
摘要翻译：用于MEM装置的信号承载挠曲结构包括至少两个具有相应截面面积的导电弯曲部分，以及固定到挠曲部分的至少一个横档，以将该部分可操作地连接在一起，使得挠曲部分和横档形成单个弯曲结构。所产生的弯曲结构的弹簧常数小于具有相当的总横截面积的固体挠曲的弹簧常数，而其电阻近似等于固体挠曲的电阻。

5. 发明申请

WO2007024410A2 FLUIDIC MIXING STRUCTURE, METHOD FOR FABRICATING SAME, AND MIXING METHOD 审中-公开
标题翻译：流体混合结构，其制造方法和混合方法
公开(公告)号：WO2007024410A2
公开(公告)日：2007-03-01
申请号：PCT/US2006/029469
申请日：2006-07-26
申请人： TELEDYNE LICENSING, LLC , DE NATALE, Jeffrey, F. , CHEN, Chung-Lung , CAI, Qingjun , TSAI, Chialun
发明人： DE NATALE, Jeffrey, F. , CHEN, Chung-Lung , CAI, Qingjun , TSAI, Chialun
IPC分类号： B81B1/00
CPC分类号： B01F13/0084 , B01F13/0086 , B81C1/00206
摘要： A fluidic micromixer comprises a plurality of fluid inlets in communication with a mixing chamber, the plurality of fluid inlets being adapted to introduce into the chamber a corresponding plurality of distinct fluid streams. The mixing chamber comprises at least one surface patterned to define hydrophobic and hydrophilic regions spaced apart along a principal direction of fluid flow within the chamber from the fluid inlets to a fluid outlet, the regions being adapted to induce fluid flow in a direction transverse to the principal direction of fluid flow to mix the fluid streams. At least one of the hydrophobic regions may comprise microstructures patterned on the at least one surface. Also disclosed are a method for fabricating the micromixer, a method of mixing a plurality of fluid streams by vortex mixing or instability mixing, and a system comprising the micromixer, fluid reservoirs and a pump for generating flow of fluids from the reservoirs to the micromixer .
摘要翻译：流体微混合器包括与混合室连通的多个流体入口，多个流体入口适于将相应的多个不同的流体流引入室中。混合室包括图案化的至少一个表面，以限定沿腔室内的流体流的主要方向与流体出口间隔开的疏水和亲水区域，该区域适于在横向于流体出口的方向上引起流体流动流体流动的主要方向以混合流体流。疏水区域中的至少一个可以包括在至少一个表面上图案化的微结构。还公开了一种制造微混合器的方法，通过涡流混合或不稳定混合混合多个流体流的方法，以及包括微混合器，流体储存器和用于产生流体从储存器到微混合器的流体的泵的系统。

6. 发明申请

WO2007001825A2 SEMICONDUCTOR DEVICE WITH A CONDUCTION ENHANCEMENT LAYER 审中-公开
标题翻译：具有导热增强层的半导体器件
公开(公告)号：WO2007001825A2
公开(公告)日：2007-01-04
申请号：PCT/US2006/022922
申请日：2006-06-12
申请人： TELEDYNE LICENSING, LLC , ZHANG, Qingchun
发明人： ZHANG, Qingchun
CPC分类号： H01L29/7722 , H01L29/0692 , H01L29/8083
摘要： A semiconductor device includes a drift layer of a first conductivity type having a doping concentration and a conduction layer also of the first conductivity type on the drift layer that has a doping concentration greater than the doping concentration of the drift layer. The device also includes a pair of trench structures, each including a trench contact at one end and a region of a second conductivity type opposite the first conductivity type, at another end. Each trench structure extends into and terminates within the conduction layer such that the second-conductivity-type region is within the conduction layer. A first contact structure is on the drift layer opposite the conduction layer while a second contact structure is on the conduction layer.
摘要翻译：半导体器件包括具有掺杂浓度的第一导电类型的漂移层和漂移层上的第一导电类型的导电层，所述漂移层具有大于掺杂浓度的掺杂浓度漂移层。该器件还包括一对沟槽结构，在一端包括沟槽触点，在另一端包括与第一导电类型相反的第二导电类型的区域。每个沟槽结构延伸到导电层中并终止于导电层内，使得第二导电类型区域位于导电层内。第一接触结构在漂移层上与导电层相对，而第二接触结构在导电层上。

7. 发明申请

WO2007001825A3 SEMICONDUCTOR DEVICE WITH A CONDUCTION ENHANCEMENT LAYER 审中-公开
标题翻译：具有导电增强层的半导体器件
公开(公告)号：WO2007001825A3
公开(公告)日：2007-06-28
申请号：PCT/US2006022922
申请日：2006-06-12
申请人： TELEDYNE LICENSING LLC , ZHANG QINGCHUN
发明人： ZHANG QINGCHUN
IPC分类号： H01L29/772 , H01L29/808
CPC分类号： H01L29/7722 , H01L29/0692 , H01L29/8083
摘要： A semiconductor device includes a drift layer of a first conductivity type having a doping concentration and a conduction layer also of the first conductivity type on the drift layer that has a doping concentration greater than the doping concentration of the drift layer. The device also includes a pair of trench structures, each including a trench contact at one end and a region of a second conductivity type opposite the first conductivity type, at another end. Each trench structure extends into and terminates within the conduction layer such that the second-conductivity-type region is within the conduction layer. A first contact structure is on the drift layer opposite the conduction layer while a second contact structure is on the conduction layer.
摘要翻译：半导体器件包括具有掺杂浓度的第一导电类型的漂移层和在漂移层上也具有大于漂移层的掺杂浓度的掺杂浓度的第一导电类型的导电层。该装置还包括一对沟槽结构，每个沟槽结构在另一端包括在一端处的沟槽接触和与第一导电类型相反的第二导电类型的区域。每个沟槽结构延伸到导电层内并终止于导电层，使得第二导电型区域在导电层内。第一接触结构在与导电层相对的漂移层上，而第二接触结构在导电层上。

8. 发明申请

WO2007015747A3 ELECTRICALLY CONTROLLED TILTABLE MICROSTRUCTURES 审中-公开
标题翻译：电控可调微结构
公开(公告)号：WO2007015747A3
公开(公告)日：2007-04-05
申请号：PCT/US2006027353
申请日：2006-07-13
申请人： TELEDYNE LICENSING LLC , DE NATALE JEFFREY F , LI XIAOBIN
发明人： DE NATALE JEFFREY F , LI XIAOBIN
IPC分类号： B81B3/00 , G02B26/08
CPC分类号： G02B26/0841 , B81B3/0062 , B81B2201/033 , B81B2201/042 , B81B2203/053 , B81B2203/058
摘要： A support structure extends upwards from a substrate and supports a tiltable platform, the upper surface of which can be a mirror, by means of spaced flexible couplings that enable the platform to tilt relative to the support structure . Respective electrodes associated with the substrate and the platform control the platform tilt in response to applied signals. The platform electrodes are spaced below and tilt with the platform, with the platform extending laterally from the support structure further than the platform electrodes. The platform is bulk micromachined, and the support structure surface micromachined.
摘要翻译：支撑结构从衬底向上延伸并且通过间隔开的柔性联接器支撑可倾斜平台，其可以是反射镜，其可以使平台相对于支撑结构倾斜。与基板和平台相关联的各电极响应于所施加的信号来控制平台倾斜。平台电极与平台间隔开并倾斜，平台从支撑结构横向延伸超过平台电极。该平台是体积微加工的，并且支撑结构表面微加工。

9. 发明申请

WO2007030327A3 HIGH TEMPERATURE MICROELECTROMECHANICAL (MEM) DEVICES AND FABRICATION METHOD 审中-公开
标题翻译：高温微电子（MEM）器件和制造方法
公开(公告)号：WO2007030327A3
公开(公告)日：2009-05-07
申请号：PCT/US2006032960
申请日：2006-08-22
申请人： TELEDYNE LICENSING LLC , DE NATALE JEFFREY F , BORWICK ROBERT L , STUPAR PHILIP A
发明人： DE NATALE JEFFREY F , BORWICK ROBERT L , STUPAR PHILIP A
IPC分类号： H01L21/00 , G01N11/00 , H01L21/46 , H01L29/84
CPC分类号： B81C1/0069 , B81C2203/032
摘要： A microelectromechanical (MEM) device per the present invention comprises a semiconductor wafer - typically an SOI wafer, a substrate, and a high temperature bond which bonds the wafer to the substrate to form a composite structure. Portions of the composite structure are patterned and etched to define stationary and movable MEM elements, with the movable elements being mechanically coupled to the stationary elements. The high temperature bond is preferably a mechanical bond, with the wafer and substrate having respective bonding pads which are aligned and mechanically connected to form a thermocompression bond to effect the bonding. A metallization layer is typically deposited on the composite structure and patterned to provide electrical interconnections for the device. The metallization layer preferably comprises a conductive refractory material such as platinum to withstand high temperature environments .
摘要翻译：根据本发明的微机电（MEM）装置包括半导体晶片 - 通常是SOI晶片，衬底和将晶片结合到衬底以形成复合结构的高温接合。复合结构的部分被图案化和蚀刻以限定静止和可移动的MEM元件，其中可移动元件机械地联接到固定元件。高温键优选是机械结合，其中晶片和衬底具有对准和机械连接以形成热压接以实现结合的各自的焊盘。金属化层通常沉积在复合结构上并被图案化以为器件提供电互连。金属化层优选地包括诸如铂的导电耐火材料以承受高温环境。

10. 发明申请

WO2007040796A2 LOW TEMPERATURE NEMATIC LIQUID CRYSTAL ALIGNMENT MATERIAL AND LCD COMPENSATOR INCORPORATING THE LIQUID CRYSTAL ALIGNMENT MATERIAL 审中-公开
标题翻译：低温液相液晶对准材料和LCD补偿器，包括液晶对准材料
公开(公告)号：WO2007040796A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/030251
申请日：2006-08-02
申请人： TELEDYNE LICENSING, LLC , HALE, Leonard, G. , CHUNG, Young, J. , GUNNING, William, J., III.
发明人： HALE, Leonard, G. , CHUNG, Young, J. , GUNNING, William, J., III.
IPC分类号： G02F1/1335
CPC分类号： G02F1/133634 , G02B5/3016 , Y10T428/1059 , Y10T428/1082 , Y10T428/31507
摘要： An anisotropic cross-linked PVA alignment layer for aligning nematic polymeric liquid crystal compensator films, which also provides an out-of-plane retardation. The cross-linked PVA alignment layer, when applied in sufficient thickness functions as both a negative uniaxial C-plate and causes alignment of the nematic liquid crystal molecules. The combination of the retardation provided by the alignment layer and the compensator film deposited on it provides a significant improvement in the contrast and color stability of liquid crystal displays (LCDs) at large viewing angles in which they are used.
摘要翻译：用于对向向列型聚合物液晶补偿膜的各向异性交联PVA取向层，其也提供了面外延迟。当交联PVA取向层以足够的厚度施加时，作为负单轴C板同时发挥向列型液晶分子的取向。由对准层提供的延迟和沉积在其上的补偿膜的组合提供了在使用它们的大视角下的液晶显示器（LCD）的对比度和颜色稳定性的显着改善。

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