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1. 发明申请

WO9704509A3 SEMICONDUCTOR LASER CHIP AND INFRARED EMITTER COMPONENT 审中-公开
标题翻译：半导体激光器芯片和红外线发射器组件
公开(公告)号：WO9704509A3
公开(公告)日：2002-02-14
申请号：PCT/DE9601295
申请日：1996-07-16
申请人： SIEMENS AG , BOGNER GEORG , BRUNNER HERBERT , HAAS HEINZ , LUFT JOHANN , NIRSCHL ERNST , SPAETH WERNER , STATH NORBERT , TEICH WOLFGANG
发明人： BOGNER GEORG , BRUNNER HERBERT , HAAS HEINZ , LUFT JOHANN , NIRSCHL ERNST , SPAETH WERNER , STATH NORBERT , TEICH WOLFGANG
IPC分类号： H01L33/54 , H01S5/02 , H01S5/022 , H01S5/18 , H01S5/34 , H01S3/025 , H01S3/19
CPC分类号： H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2933/0091 , H01S5/02228 , H01S5/02244 , H01S5/02292 , H01S5/0425 , H01S5/3428 , H01L2924/00014
摘要： The invention relates to an infrared emitter component with a commercial light-emitting diode (LED) package (11) which has two electrode terminals (13, 14), one of which has a well-shaped reflector (12), and which has an optically transparent, electrically nonconductive encapsulating material (16). The invention provides that a semiconductor laser chip (1) is mounted in the well-shaped reflector (12) of the LED package. The semiconductor laser chip (1) has a quantum-well structure, especially with a strained-layer structure, for example MOVPE epitaxial layers with the layer sequence GaAlAs-InGaAs-GaAlAs. The optically transparent, electrically nonconductive material (16) of the LED package (11) may incorporate a diffuser material (17) which in terms of type and concentration is structured and introduced so as to produce, in conjunction with the semiconductor laser chip (1) encapsulated in the LED package (11), a radiation characteristic or an enlargement of the effective emission surface that is comparable to that of a commercial infrared LED.
摘要翻译：本发明涉及一种具有商业Lumineszenzdioden-（LED）封装的红外发射装置，包括两个电极端子（13，14），其中具有一个槽形反射器（12），并且所述壳体（11）包括一个光学透明的，不导电的密封剂（16）。根据本发明，它提供了在Lumineszenzdioden-（LED）壳体的槽形反射器（12）以及（11），半导体激光芯片（1）被附接。半导体激光芯片（1）具有量子阱结构，特别是具有gestrainten层结构，例如，与所述层序列GaAlAs系的InGaAs-GaAlAs的MOVPE的外延层。在Lumineszenzdioden-（LED）壳体的光学透明的，非导电材料（16）以及（11），一个结合在其中扩散体材料（17）可以被提供，其目的是在类型和浓度等方面的或引入的被接触在Lumineszenzdioden-（LED）壳体（11）封装的半导体激光器芯片（1）给出了一个发射或增加有效发射表面，其与该可商购的红外发光二极管的相媲美。

2. 发明申请

WO1997004509A2 SEMICONDUCTOR LASER CHIP AND INFRARED EMITTER COMPONENT 审中-公开
标题翻译：半导体激光器芯片和红外线发射器组件
公开(公告)号：WO1997004509A2
公开(公告)日：1997-02-06
申请号：PCT/DE1996001295
申请日：1996-07-16
申请人： SIEMENS AKTIENGESELLSCHAFT , BOGNER, Georg , BRUNNER, Herbert , HAAS, Heinz , LUFT, Johann , NIRSCHL, Ernst , SPAETH, Werner , STATH, Norbert , TEICH, Wolfgang
发明人： SIEMENS AKTIENGESELLSCHAFT
IPC分类号： H01S03/025
CPC分类号： H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2933/0091 , H01S5/02228 , H01S5/02244 , H01S5/02292 , H01S5/0425 , H01S5/3428 , H01L2924/00014
摘要： The invention relates to an infrared emitter component with a commercial light-emitting diode (LED) package (11) which has two electrode terminals (13, 14), one of which has a well-shaped reflector (12), and which has an optically transparent, electrically nonconductive encapsulating material (16). The invention provides that a semiconductor laser chip (1) is mounted in the well-shaped reflector (12) of the LED package. The semiconductor laser chip (1) has a quantum-well structure, especially with a strained-layer structure, for example MOVPE epitaxial layers with the layer sequence GaAlAs-InGaAs-GaAlAs. The optically transparent, electrically nonconductive material (16) of the LED package (11) may incorporate a diffuser material (17) which in terms of type and concentration is structured and introduced so as to produce, in conjunction with the semiconductor laser chip (1) encapsulated in the LED package (11), a radiation characteristic or an enlargement of the effective emission surface that is comparable to that of a commercial infrared LED.
摘要翻译：本发明涉及一种具有商业Lumineszenzdioden-（LED）封装的红外发射装置，包括两个电极端子（13，14），其中具有一个槽形反射器（12），并且所述壳体（11）包括一个光学透明的，不导电的密封剂（16）。根据本发明，它提供了在Lumineszenzdioden-（LED）壳体的槽形反射器（12）以及（11），半导体激光芯片（1）被附接。半导体激光芯片（1）具有量子阱结构，特别是具有gestrainten层结构，例如，与所述层序列GaAlAs系的InGaAs-GaAlAs的MOVPE的外延层。在Lumineszenzdioden-（LED）壳体的光学透明的，非导电材料（16）以及（11），一个结合在其中扩散体材料（17）可以被提供，其目的是在类型和浓度等方面的或引入的被接触在Lumineszenzdioden-（LED）壳体（11）封装的半导体激光器芯片（1）给出了一个发射或增加有效发射表面，其与该可商购的红外发光二极管的相媲美。

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