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1. 发明申请

WO2010079979A3 NOVEL GERMANIUM COMPLEXES WITH AMIDINE DERIVATIVE LIGAND AND PROCESS FOR PREPARING THE SAME 审中-公开
标题翻译：具有脒衍生物配体的新型锗络合物及其制备方法
公开(公告)号：WO2010079979A3
公开(公告)日：2010-12-02
申请号：PCT/KR2010000105
申请日：2010-01-07
申请人： TECHNO SEMICHEM CO LTD , JUNG JAE SUN , YUN SU HYONG , KIM MINCHAN , HAN SUNG WON , PARK YONG JOO , SHIN SU JUNG , SUNG KI WHAN , LEE SANG KYUNG
发明人： JUNG JAE SUN , YUN SU HYONG , KIM MINCHAN , HAN SUNG WON , PARK YONG JOO , SHIN SU JUNG , SUNG KI WHAN , LEE SANG KYUNG
IPC分类号： C07F7/30
CPC分类号： C07F7/30 , C07F7/003
摘要： Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).
摘要翻译：提供由化学式1表示的锗配合物，其中Y 1和Y 2独立地选自R 3，NR 4 R 5或OR 6，且R 1至R 6独立地表示（C 1 -C 7）烷基。提供的具有脒衍生物配体的锗络合物是热稳定的，挥发性高，并且不包含卤素组分。因此，它可以有用地用作通过金属有机化学气相沉积（MOCVD）或原子层沉积（ALD）生产高质量锗薄膜或含锗化合物薄膜的前体。

2. 发明申请

WO2010079979A2 NOVEL GERMANIUM COMPLEXES WITH AMIDINE DERIVATIVE LIGAND AND PROCESS FOR PREPARING THE SAME 审中-公开
标题翻译：具有氨基衍生物配体的新型锗复合物及其制备方法
公开(公告)号：WO2010079979A2
公开(公告)日：2010-07-15
申请号：PCT/KR2010/000105
申请日：2010-01-07
申请人： TECHNO SEMICHEM, CO., LTD. , JUNG, Jae Sun , YUN, Su hyong , KIM, Minchan , HAN, Sung Won , PARK, Yong Joo , SHIN, Su Jung , SUNG, Ki whan , LEE, Sang Kyung
发明人： JUNG, Jae Sun , YUN, Su hyong , KIM, Minchan , HAN, Sung Won , PARK, Yong Joo , SHIN, Su Jung , SUNG, Ki whan , LEE, Sang Kyung
IPC分类号： C07F7/30
CPC分类号： C07F7/30 , C07F7/003
摘要： Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).
摘要翻译：提供了由化学式1表示的锗络合物，其中Y 1和Y 2独立地选自R 3，NR 4 R 5或OR 6，并且R 1至R 6独立地表示（C 1 -C 7）烷基。提供的具有脒衍生物配体的锗络合物是热稳定的，是高挥发性的，并且不包括卤素组分。因此，通过金属有机化学气相沉积（MOCVD）或原子层沉积（ALD）可有效地用作生产高品质锗薄膜或含锗化合物薄膜的前体。

3. 发明申请

WO2011028037A2 ETCHANT FOR THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY 审中-公开
标题翻译：蚀刻剂用于薄膜晶体管液晶显示器
公开(公告)号：WO2011028037A2
公开(公告)日：2011-03-10
申请号：PCT/KR2010/005960
申请日：2010-09-02
申请人： TECHNO SEMICHEM CO., LTD. , SONG, Yong Sung , RHEE, Tai Hyung
发明人： SONG, Yong Sung , RHEE, Tai Hyung
IPC分类号： C09K13/08
CPC分类号： H01L21/32134 , C23F1/14 , C23F1/44 , H01L29/458 , H01L29/4908
摘要： Provided is an etchant of a metal film including an organic chelating agent with an amino group and a carboxyl group; peroxides; oxidants fluorine compounds; glycols; additives and deionized water. Provided is a composition of an etchant for patterning of a copper film which is a wiring material of a gate electrode and source/drain forming a Thin Film Transistor-Liquid Crystal Display (TFT-LCD). The etchant generates uniform etching and has excellent stability, so it improvesnon-uniform etching generated by high viscosity, which is a disadvantage of the phosphorous etchant, as well as stability of the peroxide etchant. The etchant has a uniform etching property by solving a spot problem due to high viscosity of a high composition of the phosphorous etchant. Bulk etching of a single layer as well as a multi-layer is possible.
摘要翻译：本发明提供包含具有氨基和羧基的有机螯合剂的金属膜的蚀刻剂; 过氧化物; 氧化剂氟化合物; 乙二醇; 添加剂和去离子水。本发明提供一种用于图案化作为形成薄膜晶体管液晶显示器（TFT-LCD）的栅极电极和源极/漏极的布线材料的铜膜的蚀刻剂的组合物。蚀刻剂产生均匀的蚀刻并且具有优异的稳定性，因此它改善了由高粘度产生的非均匀蚀刻，这是磷蚀刻剂的缺点以及过氧化物蚀刻剂的稳定性。蚀刻剂通过解决由于磷蚀刻剂的高组成的高粘度而引起的斑点问题而具有均匀的蚀刻性质。批量蚀刻单层和多层是可能的。

4. 发明申请

WO2010079979A9 NOVEL GERMANIUM COMPLEXES WITH AMIDINE DERIVATIVE LIGAND AND PROCESS FOR PREPARING THE SAME 审中-公开
公开(公告)号：WO2010079979A9
公开(公告)日：2010-10-14
申请号：PCT/KR2010000105
申请日：2010-01-07
申请人： TECHNO SEMICHEM CO LTD , JUNG JAE SUN , YUN SU HYONG , KIM MINCHAN , HAN SUNG WON , PARK YONG JOO , SHIN SU JUNG , SUNG KI WHAN , LEE SANG KYUNG
发明人： JUNG JAE SUN , YUN SU HYONG , KIM MINCHAN , HAN SUNG WON , PARK YONG JOO , SHIN SU JUNG , SUNG KI WHAN , LEE SANG KYUNG
IPC分类号： C07F7/30
CPC分类号： C07F7/30 , C07F7/003
摘要： Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).

5. 发明申请

WO2010058868A1 RFID TAG ANTENNA AND RFID TAG 审中-公开
标题翻译： RFID标签天线和RFID标签
公开(公告)号：WO2010058868A1
公开(公告)日：2010-05-27
申请号：PCT/KR2008/006823
申请日：2008-11-19
申请人： TECHNO SEMICHEM CO., LTD. , LEE, Byung Je , YU, Byung Gil , CHOI, Nak Chung , OH, Chang Hwan , LEE, Eun Duck , PARK, Jong Hoon , PARK, Sun Byuong , KIM, Kyung Hun
发明人： LEE, Byung Je , YU, Byung Gil , CHOI, Nak Chung , OH, Chang Hwan , LEE, Eun Duck , PARK, Jong Hoon , PARK, Sun Byuong , KIM, Kyung Hun
IPC分类号： H01Q1/38 , H01Q1/24 , G06K19/07
CPC分类号： H01Q1/2208 , H01Q9/16 , H01Q9/28 , H01Q9/285
摘要： The present invention relates to a radio frequency identification (RFID) tag antenna and an RFID tag, in which a connection part where a radiator dipole and a T-junction are connected has a branch structure, so that an electric current can be induced in the T-junction and the radiator dipole by the branch structure, and the amount of the electric current induced in the radiator dipole can be adjusted to thereby control impedance of the RFID tag antenna in detail. The RFID tag antenna includes: a substrate; a radiator dipole symmetrically printed on the substrate in a form of meanders; and a T-junction formed between the symmetrical radiator dipoles, formed integrally with each end part of the symmetrical radiator dipoles and performing impedance matching between the radiator dipole and an RFID tag chip, wherein a connection part where the symmetrical radiator dipole and the T-junction are connected has a branch structure.
摘要翻译：射频识别（RFID）标签天线和RFID标签技术领域本发明涉及射频识别（RFID）标签天线和RFID标签，其中连接有散热器偶极和T形连接的连接部分具有分支结构，使得可以在通过分支结构的T形结和散热器偶极子，并且可以调节在辐射器偶极子中感应的电流量，从而详细地控制RFID标签天线的阻抗。 RFID标签天线包括：基板; 以蜿蜒形式对称地印刷在基板上的散热器偶极子; 以及形成在对称的散热器偶极之间的T形接头，与对称的散热器偶极子的每个端部整体形成，并且执行辐射偶极子和RFID标签芯片之间的阻抗匹配，其中对称的散热器偶极子和T- 连接处有一个分支结构。

6. 发明申请

WO2008150038A1 CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS 审中-公开
标题翻译： CMP浆料组合物用于铜矿化工艺
公开(公告)号：WO2008150038A1
公开(公告)日：2008-12-11
申请号：PCT/KR2007/002783
申请日：2007-06-08
申请人： TECHNO SEMICHEM Co., Ltd. , KIM, Seok-Ju , JEONG, Eun-Il , HAN, Deok-Su , PARK, Hyu-Bum
发明人： KIM, Seok-Ju , JEONG, Eun-Il , HAN, Deok-Su , PARK, Hyu-Bum
IPC分类号： C09K3/14
CPC分类号： H01L21/7684 , C09G1/02 , H01L21/3212
摘要： The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.
摘要翻译：本发明涉及用于半导体制造工艺的铜镶嵌工艺的CMP浆料组合物。本发明的铜镶嵌方法的阻挡CMP浆料组合物不包含氧化剂，因此对于铜层，氧化硅膜和Ta基膜，其显示出优异的抛光性能的再现性，低蚀刻速度和适当的抛光速度。因此，本发明的浆料组合物具有容易的凹陷或侵蚀去除，优异的分散稳定性和低的刮痕水平的优点，使其具有优异的铜镶嵌工艺的CMP浆料组合物。

7. 发明申请

WO2008078909A1 CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER COMPRISING ZEOLITE 审中-公开
标题翻译：用于包含沸石的铜的化学机械抛光组合物
公开(公告)号：WO2008078909A1
公开(公告)日：2008-07-03
申请号：PCT/KR2007/006706
申请日：2007-12-20
申请人： TECHNO SEMICHEM CO., LTD. , KIM, Seok-ju , PARK, Hyu-Bum , JEONG, Eun Il
发明人： KIM, Seok-ju , PARK, Hyu-Bum , JEONG, Eun Il
IPC分类号： C09K3/14
CPC分类号： C09K3/1481 , C09G1/02 , H01L21/3212
摘要： The present invention relates to a CMP slurry composition for polishing a copper film in a semiconductor device fabricating process. The CMP composition for polishing a substrate comprising copper comprises zeolite, an oxidizer and a complexing agent and a content of the complexing agent is 0.01 ~ 0.8 weight% with respect to an entire weight of the polishing composition.
摘要翻译：本发明涉及一种用于在半导体器件制造工艺中抛光铜膜的CMP浆料组合物。用于研磨包含铜的基材的CMP组合物包括沸石，氧化剂和络合剂，并且络合剂的含量相对于抛光组合物的整个重量为0.01〜0.8重量％。

8. 发明申请

WO2011145871A3 POSITIVE ELECTRODE ACTIVE MATERIAL, METHOD FOR PREPARING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME 审中-公开
标题翻译：正电极活性材料，其制备方法和包含其的锂二次电池
公开(公告)号：WO2011145871A3
公开(公告)日：2012-03-01
申请号：PCT/KR2011003651
申请日：2011-05-17
申请人： KNU INDUSTRY COOPERATION FOUND , TECHNO SEMICHEM CO LTD , LEE SANG-YOUNG , SHIM EUN-GI , PARK JANG-HOON , KIM JONG-SU
发明人： LEE SANG-YOUNG , SHIM EUN-GI , PARK JANG-HOON , KIM JONG-SU
IPC分类号： H01M4/60 , H01M4/48 , H01M4/62 , H01M10/0525
CPC分类号： H01M4/621 , H01M4/13 , H01M4/139 , H01M4/622 , H01M4/625
摘要： The present invention relates to a positive electrode active material, on the surface of which a chemically cross-linked polymer having movable lithium ions is formed. The present invention also relates to a method for preparing the positive electrode active material, and to a lithium secondary battery comprising the material.
摘要翻译：本发明涉及一种正极活性物质，其表面上形成了具有可移动的锂离子的化学交联的聚合物。本发明还涉及一种制备正极活性物质的方法和涉及包含该材料的锂二次电池。

9. 发明申请

WO2011028037A3 ETCHANT FOR THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY 审中-公开
标题翻译：用于薄膜晶体管液晶显示器
公开(公告)号：WO2011028037A3
公开(公告)日：2011-07-07
申请号：PCT/KR2010005960
申请日：2010-09-02
申请人： TECHNO SEMICHEM CO LTD , SONG YONG SUNG , RHEE TAI HYUNG
发明人： SONG YONG SUNG , RHEE TAI HYUNG
IPC分类号： C09K13/08
CPC分类号： H01L21/32134 , C23F1/14 , C23F1/44 , H01L29/458 , H01L29/4908
摘要： Provided is an etchant of a metal film including an organic chelating agent with an amino group and a carboxyl group; peroxides; oxidants fluorine compounds; glycols; additives and deionized water. Provided is a composition of an etchant for patterning of a copper film which is a wiring material of a gate electrode and source/drain forming a Thin Film Transistor-Liquid Crystal Display (TFT-LCD). The etchant generates uniform etching and has excellent stability, so it improvesnon-uniform etching generated by high viscosity, which is a disadvantage of the phosphorous etchant, as well as stability of the peroxide etchant. The etchant has a uniform etching property by solving a spot problem due to high viscosity of a high composition of the phosphorous etchant. Bulk etching of a single layer as well as a multi-layer is possible.
摘要翻译：提供了包含具有氨基和羧基的有机螯合剂的金属膜的蚀刻剂; 过氧化物; 氧化剂氟化合物; 乙二醇; 添加剂和去离子水。提供作为栅电极的配线材料的铜膜的图案形成用蚀刻剂和形成薄膜晶体管 - 液晶显示器（TFT-LCD）的源极/漏极的组合物。蚀刻剂产生均匀蚀刻并且具有优异的稳定性，因此改善了由高粘度产生的非均匀蚀刻，这是磷蚀刻剂的缺点以及过氧化物蚀刻剂的稳定性。通过解决由于磷蚀刻剂的高组成的高粘度导致的斑点问题，蚀刻剂具有均匀的蚀刻性能。单层和多层的体蚀刻是可能的。

10. 发明申请

WO2010056051A3 ETCHING SOLUTION FOR A TRANSPARENT CONDUCTIVE FILM 审中-公开
标题翻译：用于透明导电膜的蚀刻解决方案
公开(公告)号：WO2010056051A3
公开(公告)日：2010-08-19
申请号：PCT/KR2009006657
申请日：2009-11-12
申请人： TECHNO SEMICHEM CO LTD , RHEE SEOK JOONG , PARK CHOUNG WOO , RHEE TAI HYUNG
发明人： RHEE SEOK JOONG , PARK CHOUNG WOO , RHEE TAI HYUNG
IPC分类号： C09K13/00 , C09K13/04
CPC分类号： C09K13/00 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： The present invention relates to etching solution compositions for transparent conductive film formed into fine pattern during manufacture of thin film transistors for flat panel liquid crystal displays. The compositions of the present invention comprise: 0.05 to 15 wt % of a halogen compound, 0.1 to 20 wt % of a secondary oxidant, 0.05 to 15 wt % of an etching adjustment agent, 0.1 to 15 wt % of a residue inhibitor, 0.3 to 10 wt % of a corrosion inhibitor, and balance water bringing total weight of the composition to 100 wt %. The compositions according to the present invention do not degrade copper film, copper alloy film, molybdenum film, molybdenum alloy film or laminations thereof.
摘要翻译：本发明涉及在用于平板液晶显示器的薄膜晶体管的制造期间形成微细图案的透明导电膜的蚀刻溶液组合物。本发明的组合物包含：0.05〜15重量％的卤素化合物，0.1〜20重量％的二次氧化剂，0.05〜15重量％的蚀刻调节剂，0.1〜15重量％的残留抑制剂，0.3 至10重量％的防腐剂，并且将组合物的总重量平衡至100重量％。根据本发明的组合物不会降解铜膜，铜合金膜，钼膜，钼合金膜或其叠层。

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