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    • 2. 发明申请
    • COMPLEMENTARY LOGIC CIRCUITS WITH SELF-ADAPTIVE BODY BIAS
    • 具有自适应身体偏差的补充逻辑电路
    • WO2012045874A1
    • 2012-04-12
    • PCT/EP2011/067585
    • 2011-10-07
    • STICHTING IMEC NEDERLANDJAYAPAL, Senthil Kumar
    • JAYAPAL, Senthil Kumar
    • H03K19/00
    • H03K19/0013H03K2217/0018
    • Complementary logic circuits with self-adaptive body bias Logic circuit comprising at least one logic gate implemented in complementary logic, each logic gate comprising at least one input node, an output node and a combination of at least one PMOS transistor and at least one NMOS transistor connected between the input and output nodes, the combination implementing an inverting logic function,the at least one NMOS transistor having a first body biasing node for receiving a first body bias for influencing the threshold voltage of the NMOS transistor. The first body biasing node of the at least one NMOS transistor is connected to the output node of the respective logic gate, such that the voltage present on the output node is used as first body bias for the at least one NMOS transistor.
    • 具有自适应体偏置的互补逻辑电路包括在互补逻辑中实现的至少一个逻辑门的逻辑电路,每个逻辑门包括至少一个输入节点,输出节点和至少一个PMOS晶体管与至少一个NMOS晶体管的组合 连接在输入和输出节点之间,组合实现反相逻辑功能,所述至少一个NMOS晶体管具有第一主体偏置节点,用于接收用于影响NMOS晶体管的阈值电压的第一体偏置。 所述至少一个NMOS晶体管的第一体偏置节点连接到相应逻辑门的输出节点,使得存在于输出节点上的电压用作至少一个NMOS晶体管的第一体偏置。
    • 3. 发明申请
    • GAS SENSING DEVICE
    • 气体传感装置
    • WO2009077557A1
    • 2009-06-25
    • PCT/EP2008/067729
    • 2008-12-17
    • Stichting IMEC NederlandOFFERMANS, PeterCREGO CALAMA, Mercedes
    • OFFERMANS, PeterCREGO CALAMA, Mercedes
    • G01N21/55
    • B82Y15/00B82Y20/00B82Y30/00B82Y40/00G01N21/554G01N21/648G01N21/6489G01N21/75G01N2021/7723G01N2021/7786
    • The present invention relates to a gas sensing device comprising a nanoparticle layer (1) and a quantum dot layer (3) separated from each other by a gas absorption layer (2) which has a thickness which changes upon absorption of a gas. The nanoparticle layer (1) is provided for generating a surface plasmon resonance within a plasmon resonance frequency range upon illumination with light within a light frequency range; the quantum dot layer (3) has an absorption spectrum overlapping with said plasmon resonance frequency range of said nanoparticle layer (1) and shows photoluminescenσe in a photoluminescence emission frequency range upon absorption of energy within its absorption spectrum. The present invention further relates to a method for fabricating such a gas sensing device and to a method of using such a gas sensing device.
    • 本发明涉及一种气体感测装置,其包括通过气体吸收层(2)彼此分离的纳米颗粒层(1)和量子点层(3),所述气体吸收层具有随气体吸收而变化的厚度。 提供纳米颗粒层(1),用于在光频范围内的光照射时在等离子体共振频率范围内产生表面等离子体共振; 量子点层(3)具有与所述纳米颗粒层(1)的所述等离子体共振频率范围重叠的吸收光谱,并且在其吸收光谱吸收能量时在光致发光发射频率范围内显示光致发光。 本发明还涉及一种用于制造这种气体感测装置的方法以及使用这种气体感测装置的方法。
    • 5. 发明申请
    • CIRCUIT AND METHOD FOR DETECTION AND COMPENSATION OF TRANSISTOR MISMATCH
    • 用于检测和补偿晶体管误差的电路和方法
    • WO2014135573A1
    • 2014-09-12
    • PCT/EP2014/054229
    • 2014-03-05
    • STICHTING IMEC NEDERLAND
    • ASHOUEI, MaryamGEMMEKE, Tobias
    • H03K19/003G05F3/20G11C5/14
    • H03K19/00384G01R17/02G11C29/021G11C29/028G11C2029/5002H03K19/0027H03K2217/0018
    • The present disclosure relates to a circuit (1) for detecting transistor mismatch comprising: a signal generator (4) for generating a reference signal (Vin), and an amplification circuit (5) comprising at least one pair of a p-channel and an n-channel transistors, the amplification circuit being affected by variabilities also affecting a functional circuit (3) located on the same integrated circuit (10), said variabilities causing said transistors to have a different drive strength, the amplification circuit (5) being configured for receiving said reference signal (Vin) and for providing an amplified signal (Vout) representative of said difference in drive strength of said transistors, and wherein, said signal generator (4) is designed to be more insensitive to said variabilities than said amplification circuit (5). It also relates to an integrated circuit (10) and a method for detecting and compensating a transistor mismatch.
    • 本公开涉及一种用于检测晶体管失配的电路(1),包括:用于产生参考信号(Vin)的信号发生器(4),以及放大电路(5),包括至少一对p沟道和 n沟道晶体管,放大电路受影响位于同一集成电路(10)上的功能电路(3)的变化影响,所述变化使所述晶体管具有不同的驱动强度,放大电路(5)被配置 用于接收所述参考信号(Vin)并提供表示所述晶体管的所述驱动强度差异的放大信号(Vout),并且其中所述信号发生器(4)被设计为比所述放大电路对所述变化更不敏感 (5)。 它还涉及一种用于检测和补偿晶体管失配的集成电路(10)和方法。
    • 9. 发明申请
    • METHOD FOR DISTANCE DETERMINATION
    • WO2021123032A1
    • 2021-06-24
    • PCT/EP2020/086842
    • 2020-12-17
    • STICHTING IMEC NEDERLAND
    • ROMME, Jacobus, Petrus, AdrianusBOER, PepijnYAO, Lichen
    • G01S13/84G01S11/02
    • A method for determining a distance between a first and a second radio signal transceiver comprises receiving (2) a first and second sets of measurement results, wherein the first set is acquired by the first transceiver and transmitted by the second transceiver, the second set is acquired by the second transceiver and transmitted by first transceiver, the first set comprises, for each of a plurality of frequencies, a measurement pair of a phase value and a signal strength value and the second set of measurement results comprises, for each of said plurality of frequencies, a phase value or optionally a measurement pair of a phase value and a signal strength value; calculating (4), for each frequency a preliminary estimate of a value proportional to a one-way frequency domain channel response; calculating (5), for a frequency, a predicted estimate of a representation of said value proportional to said one-way frequency domain channel response, calculating a first (6a) and second (6b) metric distance between said predicted estimate for said frequency and a representation of said preliminary estimate for said frequency or a phase reversal of said representation of said preliminary estimate for said frequency (respectively); determining (8), a final estimate of said value based on a comparison of first metric distance and second metric distance, and determining (10) the distance between the first and the second transceiver based on a plurality of such final estimates.