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    • 4. 发明申请
    • PHOTOVOLTAIC DEVICE AND METHOD OF MAKING SAME
    • 光电器件及其制造方法
    • WO2011149850A2
    • 2011-12-01
    • PCT/US2011/037597
    • 2011-05-23
    • THE TRUSTEES OF PRINCETON UNIVERSITYAVASTHI, SushobhanSTURM, James, C.SCHWARTZ, Jeffrey
    • AVASTHI, SushobhanSTURM, James, C.SCHWARTZ, Jeffrey
    • H01L51/42
    • H01L51/4213H01L51/0052H01L51/4273Y02E10/549Y02P70/521
    • A photovoltaic device and method of manufacturing is disclosed. In one embodiment, the device includes a silicon layer and first and second organic layers. The silicon layer has a first face and a second face. First and second electrodes electrically are coupled to the first and second organic layers. A first heterojunction is formed at a junction between the one of the faces of the silicon layer and the first organic layer. A second heterojunction is formed at a junction between one of the faces of the silicon layer and the second organic layer. The silicon layer may be formed without a p-n junction. At least one organic layer may be configured as an electron-blocking layer or a hole-blocking layer. At least one organic layer may be comprised of phenanthrenequinone (PQ). A passivating layer may be disposed between at least one of the organic layers and the silicon layer. The passivating layer may be organic. At least one of the organic layers may passivate a surface of the silicon layer. The device may also include at least one transparent electrode layer coupled to at least one of the electrodes.
    • 公开了一种光电器件及其制造方法。 在一个实施例中,该器件包括硅层和第一和第二有机层。 硅层具有第一面和第二面。 第一和第二电极电连接到第一和第二有机层。 在硅层和第一有机层的一个表面之间的接合处形成第一异质结。 在硅层和第二有机层的一个面之间的接合处形成第二异质结。 可以在没有p-n结的情况下形成硅层。 至少一个有机层可以被构造为电子阻挡层或空穴阻挡层。 至少一个有机层可以由菲醌(PQ)组成。 钝化层可以设置在至少一个有机层和硅层之间。 钝化层可以是有机的。 有机层中的至少一个可以钝化硅层的表面。 该装置还可以包括耦合到至少一个电极的至少一个透明电极层。
    • 10. 发明申请
    • MODIFICATION OF POLYMER OPTOELECTRONIC PROPERTIES AFTER FILM FORMATION IMPURITY ADDITION OR REMOVAL
    • 电影形成后的聚合物光电性质的改进添加或去除
    • WO9953529A3
    • 2000-07-20
    • PCT/US9907970
    • 1999-04-12
    • UNIV PRINCETONSTURM JAMES CHEBNER THOMAS R
    • STURM JAMES CHEBNER THOMAS R
    • H05B33/10H01L27/15H01L51/00H01L51/05H01L51/30H01L51/40H01L51/50H05B33/12H01L33/00H01L21/223H01L21/225H01L21/48H01L2/76
    • H01L51/5036H01L51/0003H01L51/002H01L51/0042H01L51/005
    • The methods of this invention involve modification of an organic film after it has been deposited by either adding new dopants into it from top or bottom surface, or by causing dopants to leave the film from its top or bottom surface. In the examples of these methods, the emitting color of light emitting diodes are modifed based on doped polymers by locally introducing dopants causing different color emission into the film by local application of a solution containing desired dopant to the film surface (by ink-jet priniting, screen printing, local droplet application, etc.). This covers the difficulties of encountered with direct patterning of three separately formed organic layers (each which uniformely coats an entire surface when formed) into regions for separate R, G, and B devices due to sensitivities of the organic materials to chemicals typically used with conventional patterning technologies. Alternatively, dopants may be introduced in an organic film (16) by diffusion from one layer (18, 19) into the film (16). Alternatively, dopants may be selectively removed form a film with solvents, etc.
    • 本发明的方法涉及在通过从顶部或底部表面添加新的掺杂剂或通过使掺杂剂从其顶部或底部表面离开膜而沉积之后修饰有机膜。 在这些方法的例子中,发光二极管的发光颜色基于掺杂的聚合物,通过局部地引入掺杂剂来改变,掺杂剂通过局部地将含有所需掺杂剂的溶液局部施加到膜中(通过喷墨印刷机 ,丝网印刷,局部液滴应用等)。 这包括由于有机材料对常规使用的化学品的敏感性而导致的三个单独形成的有机层(当形成时均匀地涂覆整个表面的每个均形成涂层的单独的R,G和B装置)的区域遇到的困难。 图案化技术。 或者,掺杂剂可以通过从一层(18,19)扩散到膜(16)中而引入有机膜(16)中。 或者,掺杂剂可以用溶剂等从薄膜中选择性地去除。