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1. 发明申请

WO2012091329A3 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED THEREBY 审中-公开
标题翻译：制造发光器件的方法和由其制造的发光器件
公开(公告)号：WO2012091329A3
公开(公告)日：2012-08-23
申请号：PCT/KR2011009647
申请日：2011-12-15
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE , YOO CHUL JONG
发明人： LEE JONG LAM , SONG YANG HEE , YOO CHUL JONG
IPC分类号： H01L33/22 , H01L33/50
CPC分类号： H01L33/007 , H01L33/06 , H01L33/24 , H01L33/38
摘要： The present invention relates to a light-emitting device having a significantly enhanced light-emitting efficiency, by expanding the coating area of a fluorescent body being coated on a light-emitting diode, and placing the coating location close to an active layer (SQW or MQW). The method for manufacturing a light-emitting device of the present invention comprises a step for forming a concavo-convex portion on one surface of the light-emitting diode by forming the concavo-convex portion on the surface of a substrate, and forming consecutively on the substrate a first semiconductor layer, an active layer, and a second semiconductor layer so that the shape of the concavo-convex portion is maintained; and a step for coating the fluorescent body on the concave portion of the concavo-convex portion formed on the light-emitting diode so as to be inserted thereby.
摘要翻译：本发明涉及一种具有显着增强的发光效率的发光装置，其通过扩大涂覆在发光二极管上的荧光体的涂覆区域并且将涂覆位置放置在靠近有源层（SQW或 MQW）。本发明的发光装置的制造方法包括：通过在基板的表面形成凹凸部，在发光二极管的一个面上形成凹凸部的工序，所述衬底包括第一半导体层，有源层和第二半导体层，从而保持所述凹凸部分的形状; 以及将荧光体涂覆在形成在发光二极管上的凹凸部分的凹入部分以便插入其中的步骤。

2. 发明申请

WO2013012194A3 METHOD FOR MANUFACTURING SUBSTRATE FOR LIGHT EMITTING DIODE, SUBSTRATE FOR LIGHT EMITTING DIODE MANUFACTURED THEREBY, AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PROVIDED WITH SUBSTRATE FOR LIGHT EMITTING DIODE 审中-公开
标题翻译：制造用于发光二极管的基板的方法，由其制造的发光二极管的基板以及用于制造发光二极管的方法以及用于发光二极管的基板
公开(公告)号：WO2013012194A3
公开(公告)日：2013-03-14
申请号：PCT/KR2012005465
申请日：2012-07-10
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , LEE HWAN KEON , SON JUN HO , SONG YANG HEE , KIM BUEM JOON
发明人： LEE JONG LAM , LEE HWAN KEON , SON JUN HO , SONG YANG HEE , KIM BUEM JOON
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/007 , H01L33/22 , H01L33/32
摘要： The present invention relates to a method for manufacturing a substrate for a light emitting diode, a substrate for a light emitting diode manufactured thereby, and a method for manufacturing a light emitting diode provided with the substrate for a light emitting diode. The method for manufacturing a substrate for a light emitting diode, according to the present invention, comprises the steps of: coating the upper surface of a predetermined substrate member with a nanostructure, which comprises a material that is easier for dry etching than the substrate member; forming an upper surface uneven portion on the upper surface of the substrate member by dry etching the nanostructure and the substrate member, using the nanostructure as a mask; coating the lower surface of the substrate member with the nanostructure; and forming a lower surface uneven portion on the lower surface of the substrate member by dry etching the nanostructure and the substrate member, using the nanostructure as the mask. The present invention makes it possible to manufacture the substrate for a light emitting diode, which is provided with the uneven portion that is easily formed by coating the nanostructure and using same as the mask for dry etching, instead of using photolithography patterning, which has a high manufacturing cost and is complicated, and thus to reduce manufacturing time and cost of the substrate for a light emitting diode.
摘要翻译：发光二极管用基板的制造方法，由此制造的发光二极管用基板以及具备该发光二极管用基板的发光二极管的制造方法技术领域本发明涉及一种发光二极管用基板的制造方法，根据本发明的制造用于发光二极管的基板的方法包括以下步骤：用预定基板构件的上表面涂覆纳米结构，该纳米结构包括比基板构件更容易干蚀刻的材料 ; 使用纳米结构作为掩模，通过干蚀刻纳米结构和衬底部件在衬底部件的上表面上形成上表面不平坦部分; 用纳米结构涂覆衬底构件的下表面; 以及使用纳米结构作为掩模，通过干蚀刻纳米结构和基底构件在基底构件的下表面上形成下表面不平坦部分。本发明使得可以制造用于发光二极管的衬底，该衬底设置有通过涂覆纳米结构并将其用作干法刻蚀用掩模而容易地形成的不平坦部分，而不是使用光刻图案化，其具有制造成本高且复杂，并且因此减少用于发光二极管的衬底的制造时间和成本。

3. 发明申请

WO2012091271A3 METHOD FOR MANUFACTURING NANO-IMPRINT MOULD, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE USING THE NANO IMPRINT MOULD MANUFACTURED THEREBY, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY 审中-公开
标题翻译：制造纳米印模的方法，使用其制造的纳米印花模制造发光二极管的方法和制造的发光二极管
公开(公告)号：WO2012091271A3
公开(公告)日：2012-08-23
申请号：PCT/KR2011008158
申请日：2011-10-28
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , SON JUN HO , SONG YANG HEE
发明人： LEE JONG LAM , SON JUN HO , SONG YANG HEE
IPC分类号： B29C33/38 , B29C59/02 , G03F7/00
CPC分类号： H01L33/52 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , H01L21/02019 , H01L21/30617 , H01L29/0665 , H01L33/005 , H01L33/0075
摘要： The present invention relates to a method for manufacturing a nano-imprint mould, a light-emitting diode using same, and a method for manufacturing same. The method for manufacturing a light-emitting diode of the present invention comprises: a step for forming on a temporary substrate an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer; a step for forming on the p-type nitride semiconductor layer a p-type electrode; a step for forming a conductive substrate on the p-type electrode; a step for exposing the n-type nitride semiconductor layer by removing the temporary substrate; a step for forming a nano-imprint resist layer on the n-type nitride semiconductor; a step for transferring a nano-pattern on the nano-imprint resist layer by pressurizing a nano-imprint mould on the nano-imprint resist layer; a step for isolating the nano-imprint mould from the nano-imprint resist layer having formed the nano-pattern; and a step for forming an n-type electrode by etching a part of the nano-imprint resist layer having formed the nano-pattern. The present invention enables a method for manufacturing a nano-imprint mould that can efficiently and economically form a nano-pattern for enhancing the light extraction efficiency of a light-emitting diode, a method for manufacturing a light-emitting diode, and a light-emitting diode using the nano-imprint mould.
摘要翻译：本发明涉及一种纳米压印模具的制造方法，使用该方法的发光二极管及其制造方法。本发明的发光二极管的制造方法包括：在临时衬底上形成n型氮化物半导体层，发光层和p型氮化物半导体层的步骤; 在p型氮化物半导体层上形成p型电极的工序; 在p型电极上形成导电性基板的工序; 通过去除所述临时衬底来暴露所述n型氮化物半导体层的步骤; 在n型氮化物半导体上形成纳米压印抗蚀剂层的步骤; 通过在纳米压印抗蚀剂层上加压纳米压印模具将纳米图案转印到纳米压印抗蚀剂层上的步骤; 从形成纳米图案的纳米压印抗蚀剂层分离纳米压印模具的步骤; 以及通过蚀刻形成纳米图案的纳米压印抗蚀剂层的一部分来形成n型电极的步骤。本发明使得能够有效且经济地形成用于提高发光二极管的光提取效率的纳米图案的纳米压印模具的制造方法，发光二极管的制造方法和发光二极管的制造方法，使用纳米压印模具的发光二极管。

4. 发明申请

WO2012099436A3 METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY 审中-公开
标题翻译：制造发光二极管的方法和制造的发光二极管
公开(公告)号：WO2012099436A3
公开(公告)日：2012-09-20
申请号：PCT/KR2012000549
申请日：2012-01-20
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , KIM JONG UK , SON JUN HO , SONG YANG HEE , KIM BUEM JOON , YOO CHUL JONG
发明人： LEE JONG LAM , KIM JONG UK , SON JUN HO , SONG YANG HEE , KIM BUEM JOON , YOO CHUL JONG
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L2933/0091
摘要： The present invention relates to a method for manufacturing a light-emitting diode, in which the tilt angle of a convex-concave portion formed in a semiconductor layer are adjusted through the variation of a dry-etching condition using the difference between etching speeds (etching rates) of a nanostructure and a semiconductor layer during dry etching, to thereby improve light extraction efficiency. The present invention also relates to a light-emitting diode manufactured by the method. The present invention is a method for manufacturing a light-emitting diode in which an active layer and a second semiconductor layer are sequentially formed on a first semiconductor layer, wherein the method comprises: a step of coating a nanostructure onto the second semiconductor layer; and a step of dry-etching the nanostructure together with the second semiconductor layer using the nanostructure as a mask, to thus form a convex-concave portion in the second semiconductor layer. The nanostructure uses a material which enables easier dry-etching than the material of the second semiconductor layer, and a dry-etching condition is set in consideration of the difference in the etching rate between the second semiconductor layer and the nanostructure, so as to adjust the tilt angle of the side surface of the convex-concave portion formed in the second semiconductor layer.
摘要翻译：本发明涉及一种用于制造发光二极管的方法，其中通过使用蚀刻速度差（蚀刻速率）之间的干蚀刻条件的变化来调节形成在半导体层中的凸凹部分的倾斜角度速率）的干燥蚀刻中的纳米结构和半导体层，从而提高光提取效率。本发明还涉及通过该方法制造的发光二极管。本发明是一种制造发光二极管的方法，其中有源层和第二半导体层依次形成在第一半导体层上，其中该方法包括：将纳米结构涂覆在第二半导体层上的步骤; 以及使用纳米结构作为掩模将纳米结构与第二半导体层一起干蚀刻的步骤，从而在第二半导体层中形成凸凹部。纳米结构使用能够比第二半导体层的材料更容易干蚀刻的材料，并且考虑到第二半导体层和纳米结构之间的蚀刻速率的差异来设定干法蚀刻条件，以便调整形成在第二半导体层中的凸凹部的侧面的倾斜角度。

5. 发明申请

WO2012020968A3 SEMICONDUCTOR LIGHT EMITTING DIODE HAVING OHMIC ELECTRODE STRUCTURE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有OHMIC电极结构的半导体发光二极管及其制造方法
公开(公告)号：WO2012020968A3
公开(公告)日：2012-05-18
申请号：PCT/KR2011005796
申请日：2011-08-09
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE
发明人： LEE JONG LAM , SONG YANG HEE
IPC分类号： H01L33/36
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Disclosed are a semiconductor light emitting diode having an ohmic electrode structure and a method for manufacturing the same. According to one aspect of the present invention, the semiconductor light emitting diode comprises: a light emitting structure having an upper surface which is in an N-plane; and an ohmic electrode structure positioned on said light emitting structure. Said ohmic electrode structure comprises, from the N-plane of said light emitting structure, a lower diffusion prevention layer, a contact layer, an upper diffusion prevention layer, and an A1 protection layer. By adopting the multilayered ohmic electrode structure that includes the lower diffusion prevention layer / contact layer / upper diffusion prevention layer / A1 protection layer, deterioration of the ohmic contact property on the N-plane semiconductor layer is prevented in such a manner that a semiconductor light emitting diode with excellent thermal stability can be provided.
摘要翻译：公开了具有欧姆电极结构的半导体发光二极管及其制造方法。根据本发明的一个方面，半导体发光二极管包括：发光结构，其上表面处于N平面; 以及位于所述发光结构上的欧姆电极结构。所述欧姆电极结构包括从所述发光结构的N平面的下扩散防止层，接触层，上扩散防止层和A1保护层。通过采用包含下扩散防止层/接触层/上扩散防止层/ A1保护层的多层欧姆电极结构，能够防止在N平面半导体层上的欧姆接触特性的劣化，使得半导体光可以提供具有优异热稳定性的发光二极管。

6. 发明申请

WO2012046991A3 PATTERNING METHOD OF SEMICONDUCTOR AND SEMICONDUCTOR DEVICE THAT CONTAINS PATTERN FORMED BY PATTERNING METHOD 审中-公开
标题翻译：通过图形化方法形成图形的半导体器件和半导体器件的绘图方法
公开(公告)号：WO2012046991A3
公开(公告)日：2012-06-07
申请号：PCT/KR2011007309
申请日：2011-10-04
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE
发明人： LEE JONG LAM , SONG YANG HEE
IPC分类号： H01L21/027
CPC分类号： H01L21/3086 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The present invention relates to a patterning method of a semiconductor and a semiconductor device that contains a pattern formed by the patterning method. According to the present invention, the patterning method of the semiconductor comprises the steps of: forming a dry etching protective film on a semiconductor; forming a nano-imprint resist film on said dry etching protective film; forming a pattern on said nano-imprint resist film by using a nano-imprint stamper; forming a pattern on said dry etching protective film by using the pattern, which is formed on said nano-imprint resist film; and forming a pattern on said semiconductor by using the pattern, which is formed on said dry etching protective film. According to the present invention, the invention provides a patterning method of a semiconductor and a semiconductor device that contains a pattern formed by the patterning method, wherein patterns can be formed on a large-scale semiconductor without restrictions on depth.
摘要翻译：本发明涉及包含通过图案化方法形成的图案的半导体和半导体器件的图案化方法。根据本发明，半导体的图案化方法包括以下步骤：在半导体上形成干蚀刻保护膜; 在所述干蚀刻保护膜上形成纳米压印抗蚀剂膜; 通过使用纳米压印压模在所述纳米压印抗蚀剂膜上形成图案; 通过使用形成在所述纳米压印抗蚀剂膜上的图案在所述干蚀刻保护膜上形成图案; 以及通过使用形成在所述干蚀刻保护膜上的图案在所述半导体上形成图案。根据本发明，本发明提供一种包含由图案化方法形成的图案的半导体和半导体器件的图案化方法，其中可以在大规模半导体上形成图案，而不受深度限制。

7. 发明申请

WO2012091275A8 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2012091275A8
公开(公告)日：2012-08-23
申请号：PCT/KR2011008243
申请日：2011-11-01
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE , KIM BUEM JOON
发明人： LEE JONG LAM , SONG YANG HEE , KIM BUEM JOON
IPC分类号： H01L33/22 , H01L33/50
CPC分类号： H01L33/08 , H01L33/20 , H01L33/508
摘要： The present invention relates to a light-emitting diode and a method for manufacturing same. The light-emitting diode of the present invention comprises: a p-type electrode formed on a conductive substrate; a p-type nitride semiconductor layer formed on the p-type electrode; an active layer formed on the p-type nitride semiconductor; an n-type nitride semiconductor layer formed on the active layer; and an n-type electrode formed on the n-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer has formed on some areas thereof a concavo-convex portion, the n-type electrode is formed on the convex portion of the concavo-convex portion formed on the n-type nitride semiconductor layer, and the concave portion of the concavo-convex portion formed on the n-type nitride semiconductor layer is filled with a fluorescent body. The present invention provides a light-emitting diode having a novel structure that can significantly increase the coating area of the fluorescent body and the fluorescence conversion efficiency, and a method for manufacturing same.
摘要翻译：本发明涉及一种发光二极管及其制造方法。本发明的发光二极管包括：形成在导电基板上的p型电极; 形成在p型电极上的p型氮化物半导体层; 形成在p型氮化物半导体上的有源层; 形成在有源层上的n型氮化物半导体层; 以及形成在n型氮化物半导体层上的n型电极，其中n型氮化物半导体层在其一些区域上形成凹凸部分，n型电极形成在凹凸的凸部上形成在n型氮化物半导体层上的凹凸部分和形成在n型氮化物半导体层上的凹凸部分的凹部填充有荧光体。本发明提供具有能显着增加荧光体的涂布面积和荧光转换效率的新结构的发光二极管及其制造方法。

8. 发明申请

WO2011028076A3 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：WO2011028076A3
公开(公告)日：2011-05-26
申请号：PCT/KR2010006056
申请日：2010-09-07
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE , SON JUN HO , KIM BUEM JOON
发明人： LEE JONG LAM , SONG YANG HEE , SON JUN HO , KIM BUEM JOON
IPC分类号： H01L33/36 , H01L33/38 , H01L33/40
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/32 , H01L33/387
摘要： Provided is: a semiconductor light-emitting element comprising a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer, wherein the nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting element of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained, while the contact layer acts as a diffusion barrier layer and inhibits deterioration due to the heat generated in a nitrogen-atmosphere heat treatment and in high-temperature and high-current injection conditions and hence the thermal stability is outstanding.
摘要翻译：提供：半导体发光元件，包括具有发光结构的半导体层; 以及在所述半导体层上结合有纳米点层，接触层，防扩散层和覆盖层的欧姆电极，其中所述纳米点层形成在所述半导体层的N-极性表面上并且由包含 Ag，Al和Au中的至少一种。还提供了其制造方法。在这种类型的半导体发光元件中，在具有纳米点层/接触层/扩散防止层/盖层的多层结构的欧姆电极中，纳米点层构成氮化物半导体的N极表面并改善了电荷注入特性，使得可以获得优异的欧姆特性，而接触层用作扩散阻挡层并且抑制由于在氮气氛热处理中产生的热量以及在高温和高电流注射条件，因此热稳定性非常好。

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